ABSTRACT
Metaloxide-semiconductor field effect transistor (MOSFET) scaling over the past years has enabled us to pack millions of MOS transistors on a single chip. The secret of the miracle in integrated circuit (IC) technology originates from certain factors including scaling down the dimension of each transistor, taking advantage of the basic element of ICs, and increasing the total number of transistors in one IC chip. Silicon nanowire FETs as extremely downscaled MOSFETs are promising candidates to replace traditional bulk-devices. The MOSFET is the basic structure for very large scale integration circuits and microprocessors. One of the main challenges in transistor scaling is the "short channel effects" that become more noticeable with gate lengths smaller than 100 nm. Following the constant field scaling approach, the gate oxide SiO2 thickness is scaled down in conjunction with gate length. A dual-gate device FET structure allows for more aggressive device scaling, since short channel effects are further suppressed by doubling the effective gate control.
