ABSTRACT
This chapter reviews and discusses the theoretical physics related to graphene and graphene nanoribbon (GNR). There are several ways of obtaining GNRs from carbon nanotubes (CNTs), one of which is by unzipping a single-walled carbon nanotube to form a monolayer GNR. It could be best to start exploring GNR from the band structure of graphene where the linear band dispersion relation at the Brillouin zone is given most attention. In the case of graphene nanoribbon field effect transistor, the capacitance formed between the channel and the gate is taken into account. Carrier mobility in GNRs can be divided into several parts, which are low-field mobility, effective mobility, and field-effect mobility. GNR derived from two-dimensional graphene has great impact on the nanoscale transistor even though it is a new material. Among the issues highlighted for GNR are the dangling bonds at the edges of the GNR that contribute to the carrier scattering and thus are expected to impede the carrier mobility.
