ABSTRACT
This chapter describes the movement of electron's transport in bilayer graphene nanoribbon (BGN), which is due to the electric field. It is found that temperature is an effective factor in carrier mobilities of BGN, leading to movement of carriers in a BGN field effect transistor channel. Accordingly, the carrier transport in BGN is an essential phenomenon that helps determine current–voltage characteristics. The chapter discusses a computational model of mobility in BGN based on the systematic exposition, which is used for the calculation of mobility by the conductance limit effect. A significant shift to the mobility model at the Dirac point illustrates the effect of carrier mobility reduction in BGN. The chapter explores the carrier density and the temperature effect on the mobility of carriers in BGN. It concludes that by decreasing the temperature, the turn-on voltage shifts rightward to larger values, which shows better performance in comparison with typical rectification behavior of a Schottky diode.
