ABSTRACT
In this chapter, a mathematical model that can be analyzed using numerical methods has been derived to characterize the carrier statistics of bilayer graphene nanoribbon (BGN). It considers the point that charge carriers in graphene can travel ballistically over submicron distances and the ballistic conductance of BGN. Graphene nanoribbon (GNR) exhibits excellent electronic and thermal characteristics. It is notable that almost-ballistic transport in BGN field effect transistors (BGNFETs) is induced by its very high mobility. It has been shown that the band gap of BGN can be varied by means of an external perpendicular electric field and induced significant band gap between the valence and conduction bands from a zero-gap semiconductor to an insulator. It has been demonstrated by some experiments that a perpendicular electric field applied on a BGN is a valuable tool to change its energy band structure. In the nondegenerate regime, the carrier concentration of BGN is a function of temperature, particularly in a lower number of carrier concentration.
