ABSTRACT
SiOx/SiO2 and SiOx/SiNx multilayers have been grown by reactive
magnetron sputtering. Different fabrication parameters have been
studied to optimize the density of Si nanoparticles (Si-nps) within
the SiOx sublayer. The aim is to favor the optical properties of the
film as well as the carrier transport for the future development of Si-
np-based solar device. This chapter evidences the beneficial role of
the SiNx sublayer on the achievement of good optical properties in a
lower thermal budget with respect to the SiOx/SiO2 counterparts.
Moreover, the replacement of the SiO2 sublayer by the SiNx one
allows for a gain of two orders of magnitude of the conductivity of
the film. These different multilayer structures have been deposited
on the nanostructured substrate in a p-i-n configuration and photoconductance experiments have been carried out.
