ABSTRACT
In this paper, performance of ZnO/p-Si solar cell has been analyzed using TCAD tool. Semiconductor-semiconductor, metal-semiconductor heterointerface effects and defects in ZnO have been considered in this analysis. Performance has been studied by varying different physical and device parameters and some best possible designs for enhanced efficiency have been proposed. Thickness of ZnO layer plays an important role on the performance of the device. Short circuit current density of 54 mA/ cm2, open circuit voltage of 0.62767 V and efficiency of 27.88% has been obtained for 80 nm thick ZnO layer of the device.
