ABSTRACT
The methods of measuring lattice parameter regarding the strained layer multiple quantum well (SL-MQW) structure in an optical semiconductor device are investigated, using nano beam electron diffraction and lattice image analysis. By means of these methods, we analyzed the buried laser structure, which includes the active region as an InGaAsP/InGaAsP strain compensated MQW, epitaxially grown on an InP substrate. It was found that the results properly corresponded to those of X-ray diffraction as a macroscopic measuring method.
