ABSTRACT
In dislocated CdTe and ZnSe the recombination of ID excitons could be proved by analysing the Y luminescence arising from straight B(g) type dislocation segments situated in surface-parallel position along [110], The defect lines are regarded as natural quasi-quantum wire structures originating from the strain field induced long-range potentials associated with the dislocations. We checked several criteria such as line recombination velocity, polarisation properties, and phonon coupling that show dislocation-related radiative recombination via confined low-dimensional electronic states.
Spectrum characteristics and, in particular, the high degree of linear polarisation up to DLP=0.75 give adequate indication of the existence of one-dimensional exciton recombination at the B(g) dislocations. The energetic positions of the 1D energy bands have to be deduced from derived localisation energies of 120meV for CdTe and 171meV for ZnSe, respectively.
