ABSTRACT
Structural studies of InGaAsN films grown by CBE have been undertaken using STEM elemental mapping and linescans. The results show that phase separation of the InGaAsN occurs at the surface during growth, forming platelets of InGaAs (or InGaAsN) separated from each other by a second-phase which is probably cubic-GaN. The geometry of the platelets is anisotropic, and the In-fraction varies across each platelet. The microstructure is consistent with it resulting from islands of the two different phases forming on the surface which then laterally overgrow each other.
