ABSTRACT
The properties of InGaAs(N)/GaAs quantum wells grown by MOVPE were studied by using the energy filtered transmission electron microscopy and X-ray microanalysis. We investigated the structural properties of InGaAs(N) quantum wells that were grown with 30% In concentration in the presence of a small N concentration. It was found that the quantum wells show no defects or interface undulation. The energy filtered microscopy was used to acquire an In distribution image at high spatial resolution. It was shown that the In distribution profile was slightly asymmetrical due to the effects of segregation during growth. We compared the use of the different analytical methods to provide complementary compositional information.
