4 Pages

Structural study of the influence of different growth parameters on the quality of InxGa1-xN/GaN films grown by MOCVD

WithE Piscopiello, M Catalano, M Vittori Antisari, A Passaseo, R Cingolani, M Berti, A V Drigo

Defect structures in InxGa1-xN films grown on GaN/Al2O3 (0001) epilayers by metal-organic chemical vapour deposition (MOCVD) were investigated by means of transmission electron microscopy. The effects of the different growth parameters on the structural properties of the samples were examined. Defects, including threading dislocations, partial dislocations and V-defects were analyzed by diffraction contrast analysis.