ABSTRACT
Solid-state diffusion (from P-doped amorphous Si) coupled with a laser thermal process (LTP) is used to fabricate shallow n+/p junctions. TEM combined with selective chemical etching is used to characterize two-dimensional (2D) dopant profiles in the n+/p junctions. It is shown that the amorphous Si is transformed into crystalline material, as the energy density of laser increases. It is shown that as a result of the laser irradiation, phosphorous is incorporated into the substrate. The 2D dopant profile of the LTP sample is compared with that of the rapid-thermal-processed sample.
