ABSTRACT
High resolution transmission electron microscopy (HRTEM) has been fruitfully applied to investigate the solid-state amorphization in metal/Si systems. The present review highlights the achievements of HRTEM in the investigation of amorphous interlayers in metal/Si systems, including growth kinetics, simultaneous presence of multiphases in the initial stage of metal/Si interaction and structures of amorphous interlayers. The analytical technique has also been applied to elucidate mechanisms of roughening of the epitaxial rare-earth silicide/(001)Si interface and formation of stacking faults in rare-earth silicides. The enhanced formation of technologically important C54-TiSi2 by high temperature sputtering, a thin interposing Mo layer and tensile stress can all be explained involving the structures of the amorphous interlayers.
