ABSTRACT
Continual scaling of microelectronic circuit supply voltages to lower electric fields on junctions and decrease dynamic power consumption in order to maintain device reliability has led to an increase in Subthreshold leakage current. This chapter introduces the mechanisms present in complementary metal-oxide semiconductor (CMOS) active and passive power consumption that contribute to the total power consumption in analogue and digital electronic circuits. It provides a physical and mathematical description of each of the mechanisms. The chapter introduces the notion of tunneling field-effect transistors, which are steep-slope transistors capable of ultra-low power consumption through their inverse subthreshold slope beneath the traditional 60 mV/dec limit for Metal-oxide semiconductor field-effect transistors. It highlights the dynamic switching power consumption in the CMOS inverter and compare it with the passive power consumption mechanisms. In submicron electronic components, circuits and systems, thermal constrictions confine advances in components driven by Moore's law.
