ABSTRACT
This chapter presents a summary of some of the most relevant
studies of shot noise in inorganic single-tunnel-barrier spintronic
devices. Although we shall deal mainly with charge-related shot
noise, we shall see that spin degree of freedom could influence
the shot noise through spin flip scattering or spin accumulation.
We first briefly consider shot noise in Al2O3-based MTJs which
were historically the first type of MTJs discovered. The main deal
of analysis will be dedicated to shot noise in MgO-based MTJs
which revolutionized spintronics since 2004.We shall concludewith
discussion of recent proposals and attempts to observe pure spin
shot noise in MTJs.
