ABSTRACT
ABSTRACT: In this paper, we present the computation of single-event transients for calculating the charge collection in dual-well structure. A well gradient collapse drain injection for SRAM cell is demonstrated through TCAD modeling. Simulation presents that the deposited charge will induce parasitic bipolar amplification to broaden the transient widths for PMOS device under the effects of N-well region. The efficiency of charge collection is correlated to the distribution of SET pulse widths. Aiming at improving the reliability of devices, well potential contacts are expected to be established.
