ABSTRACT
Nanometer-scale epitaxial growth of Group IV semiconductors on silicon (Si) substrate has become increasingly important for the fabrication of ultrasmall metal–oxide–semiconductor (MOS) devices and Si-based heterodevices. Because high-performance devices require atomic-order abrupt heterointerfaces and doping profiles as well as strain engineering due to the introduction of germanium (Ge) and C into Si. By ultraclean low-pressure chemical vapor deposition on (100) surface using SiH4 and GeH4 gases, high-quality low-temperature epitaxial growth of Si, Si1-x Gex, and Ge with atomically flat surfaces and interfaces on Si(100) is achieved. The atomic order surface reaction processes are formulated based on a Langmuir-type adsorption and reaction scheme. Additionally, the increase of electrically active P atoms in Ge is expected by co-introduction together with Si atoms. Moreover, the local strain control in Si, Si1-xGex, and Ge may induce the increase of electrically active n-type and p-type impurity atoms.
