ABSTRACT
In this chapter, the authors introduce the basic processing sequences and processes of silicon electronics planar technology. They describe some of their technical investigations and developments for the synthesis and fabrication of electronic devices based on epitaxial graphene on silicon carbide (SiC). The authors frame their achievements within peers' relevant works and summarize this contribution about technology with the challenges and future work, which would be required to upgrade epitaxial graphene on SiC and bring it up to the market to provide novel or superior electronic devices. They extend the discussion of the epitaxial growth of graphene on SiC, understood also as an interesting combination of treatments/ processes. The authors demonstrate some of their strategies based on planar processing. They develop several instances of strategic synthesis as well as micro/nanofabrication of electronic devices applied to epitaxial graphene on SiC. The conventional top-down graphene-based device technology is to form nanoribbons by resist patterning plus dry etching in an O2 plasma.
