ABSTRACT
This chapter discusses the growth of epitaxial graphene on cubic silicon carbide, 3C-SiC(111)/Si(111) and the results obtained by several authors in this research area. Due to the hexagonal structure formed by the cubic (111) face of cubic 3C-SiC, graphene is expected to grow epitaxially. The chapter reviews the details of transformation of SiC to graphene at the atomic level, how graphene growth proceeds with time, and how to produce continuous large areas of graphene on 3C-SiC(111)/ Si(111). The term "epitaxy" comes from Greek, meaning the growth or deposition of a crystalline overlayer on a crystalline substrate. The thermal graphitization of bulk SiC involves heating the sample to temperatures between 1200°C and 1600°C, resulting in the thermal decomposition of the surface. Graphene produced on bulk SiC annealing presents interesting electrical properties. The chapter presents a summary of the knowledge acquired in the recent years regarding graphene growth by Si sublimation on 3C-SiC(111)/ Si(111) in ultrahigh vacuum (UHV).
