ABSTRACT
GaN-based high-electron-mobility transistors (HEMTs) are considered a promising candidate to work in a harsher environment by virtue of wider bandgaps, higher electron mobility, and higher breakdown voltages. This chapter introduces the packaging technologies for GaN HEMTs, including the advances of packaging technologies and the commonly used package types in GaN device packaging. Discrete GaN field-effect transistors (FETs) (HEMTs) are usually launched in transistor outline (TO) packages or surface-mount packages, which are commonly used for conventional Si power devices. DirectFET is a packaging technology created by International Rectifier. Nowadays, this technology is used to package the GaN radio frequency (RF) power transistors, and the packaged products have been introduced to some base station manufactures. In 2015, Panasonic announced that it would launch the industry's smallest E-mode GaN transistor using a dual-flat no-lead (DFN) package and the mass production of GaN power devices.
