ABSTRACT
The structure and measuring method of the organic phototransistor device are shown in Figure 1. Firstly, making the collector of ITO on a glass substrate by the RF magnetron sputtering method, it was prepared under a chamber pressure of about 1 Pa and sputtering time of 10 minutes. Then the first organic dye CuPc layer was prepared by vacuum evaporation deposition at 350ºC. The temperature of the substrate was 20ºC and the deposition rate about 3 nm/min when the pressure range of the organic chamber was between 2.05.0 × 10-3 Pa. Next, using DC magnetron sputtering to make the Al base, the sputtering time is 20 s. In order to avoid damage to the CuPc film layer, we take the discontinuous sputtering. Getting thickness of Al-based film is about 20 nm. Then the second CuPc layer film layer was deposited in the same way. The times for the upper and lower organic layers of depositing were 35 min and 45 min, and the thickness of CuPc films about 70 nm and 130 nm, respectively. Finally, the Cu emitter was also obtained by the DC magnetron sputtering technique to prepare for about 20 s. In this study, we used a multipurpose instrument for the OLED multi-coating system and a Keithley Instruments manufactured 4200 Semiconductor Characterization System (SCS) for measuring the transistor characteristics. We also used a 130Xe type wavelength tunable monochromatic light source as the illumination light source as it provides a continuously adjustable and strong monochromatic beam wavelength, and can be computer controlled.
