Influence of doping concentration and deposition temperature on gauge factor and nonlinearity of polysilicon nanofilm

Polysilicon has been an important material in fabricating MEMS devices and CMOS transistors. The piezoresistive properties of polysilicon have been studied since the 1970s’ (Onuma et al. 1974, Luder 1986, Suzuki and Mosser 1989), which have been successful in design of piezoresistive sensor. With the development of nanoscale technology, the piezoresistive properties of polysilicon nanofilm (thickness is smaller than 100 nm) has received more and more attention.