ABSTRACT
This chapter describes the implementation of the soliton oscillator concept in the form of three prototypes: a low MHz, discrete CMOS prototype; a microwave, discrete bipolar prototype; and a CMOS chip-scale prototype. The low-frequency operation and discrete nature of the low MHz, discrete CMOS prototype allow to examine not only the stable soliton oscillation, but also the inner workings of the oscillator, including the key stabilizing mechanisms. In addition to stable operation in steady-state, the microwave prototype exhibited similar spatial dynamics as the CMOS prototype. The microwave soliton oscillator prototype was implemented using a discrete nonlinear transmission line, similar to the low MHz prototype, and an amplifier built from RF bipolar transistors. Due to the low transconductance of CMOS devices, the effective saturable absorbtion is not large. Bipolar technology offers a significantly higher transconductance and with it a much larger saturable absorbtion.
