ABSTRACT
The ability to grow large, defect-free crystals of a given material is often an important rst step in its characterization. This is especially critical for highenergy (HE) materials, which require both large and uniformly sized crystals for various performance and sensitivity tests [Foltz et al., 1996]. While often a matter of routine recrystallization, some HE materials such as TATB, are “notorious” for their poor solubility and crystal growth properties in
CONTENTS
4.1 Introduction ..................................................................................................63 4.2 Computational Details ................................................................................65
