ABSTRACT
ZnO, which crystallizes in the wurtzite structure, is a direct band-gap semiconductor with a room temperature band gap of 3.37 eV, an exciton binding energy of 60 meV, and other useful properties. ZnO can be grown at relatively low temperatures below 500°C. The band gap of ZnO can be tuned by forming alloys of ZnMgO, ZnCdO, etc. Magnetic semiconductors can be obtained from ZnMnO, ZnCrO, and so on, which have wonderful applications in spintronics and other Œelds.
