Room Temperature Self-Excited Electronic Raman Scattering by Intersubband Transitions in Compressively Strained InGaAs Quantum-Well Lasers

In this paper we report the observation of the resonant electron Raman scattering (ERS) in InGaAs/GaAs QW lasers by self-photo-excitation above threshold at room temperature. The subbannd energies of the electron and of the heavy hole in the quantum well are assigned from the observed spectra. The band-offset ratio is determined by the numerical analysis of the Schroedinger equation to the experimental data of the subband energies.