ABSTRACT
Abstract. A technique for achieving large-scale monolithic integration of materials on a wafer has been developed. The simultaneous integration of lattice-mismatched materials in the vertical direction and dissimilar latticematched materials in the lateral direction can be achieved. The technique uses a single nonplanar direct-wafer-bond step to transform epitaxial structures into lateral epitaxial variation across a wafer surface. Nonplanar wafer bonding is demonstrated by integrating four different unstrained multi-quantum-well active regions lattice matched to InP on a GaAs wafer surface. Photoluminescence is used to verify that the bonding process does not degrade the optical quality of the laterally integrated wells. The authors propose this technique as a means to achieve greater levels of wafer-scale integration in optical, electrical, and micromechanical devices.
