ABSTRACT
Abstract. Feasibility of formation of GaAs/AlGaAs hexagonal nanowire networks by selective MBE growth on patterned (001) substrates is investigated. First, the process for forming <Tl0>-oriented straight QWR arrays is studied and optimized with respect to wire shape, size and uniformity. SEM and PL studies showed that arrow-head shaped GaAs nanowires can be formed on the top of (113) AlGaAs ridge with excellent size controllability and high uniformity. Feasibility study o f hexagonal nanowire network formation by combining different pattern orientations has shown combination of < f l 0>- and <510>- directions is most promising.
