ABSTRACT
Wurtzite SAG GaN on line patterns [5] and dot patterns [6] were obtained by using the SAG technique. This structural control technique has been applied to field emitters [7, 8], waveguides [9], facet lasers [10] and low dimensional quantum structures [11, 12]. Selective area growth of line-patterned GaN and AlGaN was carried out by MOVPE on (0001) GaN/sapphire substrates using Si02 masks [5]. A GaN structure with a triangular crosssectional shape comprising {1-101} facets formed in the <11-20> direction. The growth rate (both vertical and lateral), sidewalls of stripes, roughness of sidewall surfaces were dependent on the stripe orientation [5, 13]. Kitamura et al. [6 , 14] fabricated GaN hexagonal pyramids on dot-patterned GaN/sapphire substrates. The structure comprises a hexagonal pyramid covered with six {1-101} facets. A self-limited (0001) facet appeared on the top.
