ABSTRACT
One possible explanation of this result is that the type of defects formed during 77K implants is different from RT implants in the case of InGaAs and this may be the explanation for the two orders of magnitude difference in the sheet resistivity between 77K and RT as-implanted samples. For 77K implants, a thermally stable isolation is maintained up to 600°C. A maximum sheet resistivity of -2.2xl07 Q/C is achieved for 77K implanted samples which have been annealed at 500°C for 60s. For higher annealing cycles, the sheet resistivity decreases sharply and the initial p-type conductivity is restored by 700°C even for the other three implantation temperatures.
