ABSTRACT
In this paper, by using an AlGaAs barrier layer, instead of a GaAs barrier layer, with an InAlAs cap layer, we demonstrate an approach to simultaneously tune the InAs QD ground state emission wavelength to 1.3 ~m and increase the separation between the QD ground and first excited state transition energies. We also show the distinct difference in surface morphology between InAs QDs capped with a thin AlAs layer and with a thin GaAs layer to aid in the interpretation of the experimental results. With a proper design, a large transition energy separation of 108 meV with ground state emission at 1.3 ~m has been realized.
