of the QDs. In an efforts to achieve luminescence

In this letter, we report a new simple method to grow QDs on a GaAs substrate with a strong photoluminescence (PL) in the 1300 nm region. A small amount of nitrogen in a form of dimethylhydrazine (DMHy) as low as 2. 7% of AsH3 supplied during the growth of InAs QDs has an effect of generating a PL peak at 1300 nm and reducing the FWHM of the peak as narrow as 33 meV at room temperature. The luminescence characteristics such as temperature and power dependence and carrier decay behavior as compared with InAs and InGaAs QDs grown without nitrogen are discussed.