ABSTRACT
In this section we review results on strong-field magnetoresistance in the weakdisorder regime, kFl > 1. As mentioned in Section III, two mechanisms con tribute to the log J-dependent resistivity at low temperatures: weak-localization and carrier-carrier interaction. Magnetoresistance measurements make it possible to analyze the two contributions separately. This analysis yields an especially large contribution for the carrier-carrier interaction contribution (« 70%) for Q F fibers as compared to the very minor contribution (« 7%) in the two-dimensional electron gas produced at the interface of a MOSFET semiconductor devices [47].
