ABSTRACT
GaInNAs was proposed and created in 1995. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material with a bandgap energy that corresponds to the long-wavelength range. By combining GaInNAs with GaAs, an ideal band lineup for laser-diode application is achieved. This chapter presents the application of GaInNAs in long-wavelength laser diodes, especially in the 1.3-µm-range lasers that have already gone on the market.
