ABSTRACT
Transition R a t e ............................................................................331 5. Electron and Hole Impact Ionization Coefficients in GaN . . . 340
6. Modeling Impact Ionization in Device Structures .................... 346 6.1. Optical Properties of G a N ........................................................ 348 6.2. Basics of APD Device P erfo rm an ce ........................................ 350 6.3. Expected Performance Limitations of GaN Based
APD D evices................................................................................352
