ABSTRACT
In this chapter, we describe an advanced technique for measuring the photoluminescence (PL) maps of semiconducting carbon nanotube (CNT) thin films in the near-infrared (NIR) range, typically from 800 to 2,300 nm. This was made possible by developing both NIRPL instruments as well as CNT thin-film fabrication methods. Two types of NIR-PL instruments were implemented, (1) a scanning type, consisting of a single element InGaAs detector connected to a lockin amplifier attached to a 0.12 m monochromator (800-2,200 nm), and (2) a Fourier transform infrared (FT-IR) type, including a single element InGaAs detector (range 900-2,300 nm, resolution 16 cm-1).
