ABSTRACT
This chapter presents the current status and trends of tunneling field effect transistors (TFET) and the advantages of carbon nanotube (CNT) based TFETs. It has been widely reported that TFET is of potential to be the next-generation device design structure as it can eliminate the scaling problems that exist in CMOS and improve the subthreshold swings. Performances of different TFETs designs, including CNTFETs, are discussed and compared with conventional transistors.
