ABSTRACT
Recently, it has become possible to study individual dopants using
transport spectroscopy [3, 4, 31, 38]. This opportunity emerged as
a natural consequence of the effort of the semiconductor industry
to overcome the fundamental limitations of classical device geome-
tries. A promising candidate geometry to solve problems that limit
scaling, such as short-channel effects and drain-induced barrier
lowering, is the fin field-effect transistor (FinFET). Interestingly,
this geometry has enabled the investigation of electron occupation,
excited-state spectra, the binding energy, and the effect of a nearby
interface of single-donor atoms. This research has been driven,
in large part, by the promises of a single-atom-based quantum
computer, which utilizes individually gated dopants positioned close
to an interface as a two-level system. In particular, a specific
architecture has been proposed that allows for quantum control
over the interactions aswell as the coherent evolution [16, 19]. More
recently, innovative semiclassical logic schemes that take advantage
of the orbital structure or just the charge degree of freedom of single
dopants have been proposed [6, 20, 26]. In all these schemes, one of
the key aspects is the understanding and control of thewavefunction
of a single-atom dopant.
