ABSTRACT
This chapter describes the recent developments of high-
performance metamorphic In(Ga)As quantum dot lasers on GaAs
and Si substrates. The epitaxial growth andmaterials characteristics
of metamorphic buffer layers and quantum dot heterostructures
on GaAs and Si are first discussed. The use of multiple lay-
ers of self-organized In(Ga, Al)As/GaAs quantum dots as three-
dimensional (3-D) dislocation filter to reduce dislocation density in
metamorphic heterostructures on Si is also presented. The design,
epitaxial growth, fabrication, and performance characteristics of
self-organized In(Ga)As quantum dot lasers on both GaAs and
Si, with emission wavelengths in the range of ∼1.0-2.0 μm, are subsequently described, followed by discussions on the future
prospects and challenges of metamorphic quantum dot lasers.
