ABSTRACT
This chapter introduces the importance and research aims of information data storage. It analyzes the development trends of different information storage devices, including in-line data storage devices (random access memory, RAM), buffer data storage devices, (flash memory and hard disk drives by magnetic recording), and off-line data storage devices (magnetic tape and optical disk memory). It also compares new solid-state memories, such as magneto-resistive RAM (MRAM), phase change RAM (PCRAM), resistive RAM (RRAM), and ferroelectric RAM (FRAM). For developing information data storage at the nanoscale, two important scientific issues-advanced optical lithography and fast phase change mechanism-are discussed in the chapter.
