ABSTRACT

Narrow Gap Semiconductors 1995 contains the invited and contributed papers presented at the Seventh International Conference on Narrow Gap Semiconductors, held in January 1995. The invited review papers provide an overview and the contributed papers provide in-depth coverage of research results across the whole field.

part Chapter 1|40 pages

Infrared Lasers and Emitters

chapter |7 pages

GaSb-based semiconductor lasers in the 4-μm band*

ByH. K. Choi, G. W. Turner, H. Q. Le

chapter |5 pages

300K light emitting devices for the 3 - 10µm band from arsenic rich InAs/InAs1-x Sbx strained layer superlattices

ByM.J. Pullin, P.J.P. Tang, S.J. Chung, C.C. Phillips, R.A. Stradling, A.G. Norman, Y.B. Li, L. Hart.

chapter |5 pages

Interfaces in InAsSb/InGaAs strained-layer superlattices grown by MOCVD for use in infrared emitters

ByR. M. Biefeld, D. M. Follstaedt, S. R. Kurtz, K. C. Baucom

chapter |6 pages

Heterostructures and Infrared Emitters with Compressed InAsSb Layers (Invited)

BySteven R. Kurtz, Robert M. Biefeld

chapter |7 pages

High-power diode-laser-pumped midwave infrared HgCdTe/CdZnTe quantum well lasers

ByH. Q. Le, A. Sanchez, J. M. Arias, M. Zandian, R. R. Zucca, Y.-Z. Liu

chapter |5 pages

3-4µm laser diodes based on GaInSb/InAs superlattices

ByR H Miles, D H Chow, T C Hasenberg, A R Kost, Y-H Zhang

chapter |5 pages

Mid infrared lasers grown on InAs by modulatedmolecular-beam epitaxy

ByY H Zhang, H Q Le, D H Chow, R H Miles

part Chapter 2|84 pages

II–VI Characterization

chapter |5 pages

Luminescence and Optical Gain from Free, Localized and Confined Excitons in Narrow-Gap Hg0.7Cd0.3Te

ByJ W Tomm, T Kelz, W Hoerstel, T K Tran, B K Wagner, R G Benz II, C J Summers

chapter |4 pages

Investigation of Impurity/Defect Level in Hg 1 -xCdxTe Alloys Using Infrared Magneto-Photoconductivity

ByP.L. Liu, W. Lu, X.F. Lu, H.M. Gong, X.N. Hu, Y.M. Mu, J.H. Chu, S.C. Shen

chapter |5 pages

Magnetophonon Oscillations in the Longitudinal Magnetothermal EMF of Narrow Gap Hg1-xCdxTe

ByJ. Baars, C. L. Littler, D. Brink, M. Bruder

chapter |5 pages

Optical properties and interdiffusion of (001) HgTe/Hg1-xCdxTe superlattices

ByF Goschenhofer, V Latussek, S Einfeldt, M O Möller, C R Becker, G Landwehr

chapter |5 pages

Effect of Hg Pressure on the Diffusion of Hg IN CdTe

ByM U Ahmed, E D Jones, J B Mullin, N M Stewart

chapter |5 pages

Studies on the Pressure-dependency of the Diffusion of Iodine into CdTe

ByE. D. Jones, J. Malzbender, N. Shaw, J. B. Mullin

chapter |5 pages

The Study of Mercury Vacancies in Hg1-xCdxTe from Capacitance and Photoluminescence Spectroscopy

ByYong Chang, Junhao Chu, Wenguo Tang, Shiping Guo, Dingyuan Tang

chapter |5 pages

CARS and Faraday Effect in Narrow Gap HgCdMnTe

ByW. Herbst, H. Pascher, F. Geist, M. Baran, T. Dietl, W. Dobrowolski, R. Szymczak

chapter |5 pages

Galvanomagnetic properties of (Cd1- x-y Zn x Mn y )3As2

ByR. Laiho, K.G. Lisunov, V.N. Stamov, V.S. Zahvalinskii

chapter |5 pages

Optical and photoelectrical properties of β-FeSi2 thin films*

ByW.Z. Shen, S.C. Shen, W.G. Tang, L.W. Wang

chapter |5 pages

Influence of mercury pressure on composition profile of LPE Hg1-xCdxTe film

ByB. Li, J.H. Chu, X.Q. Chen, J.Y. Cao, D.Y. Tang

chapter |5 pages

Electronic and magnetic properties of diluted magnetic semiconductor Hg1 - x Mn x Te1 - y Se y

ByV. A. Kulbachinskii, P. D. Maryanchuk, I. A. Churilov, M. Inoue, M. Sasaki, H. Negishi, Y. Hara

chapter |5 pages

Optical transmission and infrared photoluminescence of Hg1-x-yCdxMnySe single crystals

ByYu.I. Mazur, G.G. Tarasov, S.R. Lavoric, J.W. Tomm, H. Kissel

chapter |5 pages

New photoluminescence peculiarities in Mn-enriched Hg1-xCdxTe single crystals

ByYu I Mazur, G G Tarasov, J W Tomm

chapter |5 pages

Measurement of surface recombination velocity in HgCdTe by using Photoconductive decay method

ByY C Chung, J K Hong, S B Lee, B I Chang, S U Kim, M J Park, M Kim

chapter |5 pages

Effect of the Distribution of Photogenerated Carrier on HgCdTe Photoconductivity

ByYongsheng Gui, Junhao Chu., Limin Gui

part Chapter 3|69 pages

IV-VI Materials

chapter |5 pages

The study of a resonant Cr donor in PbTe, PbSe, PbTe1-ySey and Pb1-xSnxTe

ByE Grodzicka, W Dobrowolski, T Story, Z Wilamowski, B Witkowska

chapter |5 pages

Anomalous transport properties of Sn1- x Gd x Te

ByW Dobrowolski, E Grodzicka, T Story, Z Gołacki, R R Gałązka

chapter |5 pages

Stimulated emission in multi-valley lead salts with star degeneracy lifted by strain and magnetic fields

ByJ W Tomm, K H Herrmann, M Mocker, T Kelz, T Elsässer, R Klann, B V Novikov, V G Talalaev, V E Tudorovskii, H Böttner

chapter |5 pages

Faraday effect in epitaxial films of IV-VI semiconductors

ByW. Herbst, H. Pascher, G. Bauer

chapter |5 pages

Band- and Exchange Parameters of Pb1-xEuxTe

ByF. Geist, H. Pascher, G. Springholz, G. Bauer

chapter |5 pages

FTIR Characterization of IV-VI Semiconductors Grown by LPE on (100) BaF2

ByPatrick J. McCann, Lin Li, Shu Yuan, John E. Furneaux

chapter |5 pages

Magnetotransport in PbTe nipi structures

ByJ. Oswald, M. Pippan, G. Heigl, G. Span, T. Stellberger

chapter |7 pages

Epitaxy of IV-VI materials on Si with fluoride buffers and fabrication of IR-sensor arrays

ByH. Zogg, A. Fach, J. John, J Masek, P. Müller, C. Paglino

chapter |6 pages

Monolayer short period superlattices of narrow gap PbTe and antiferromagnetic wide band gap EuTe

ByG. Springbok, J. J. Chen, N. Frank, Y. Ueta, G. Marschner, C. Pichler, G. Bauer, M. S. Dresselhaus, G. Dresselhaus, T. M. Giebultowicz, V. Nunez, L. Salamanca-Riba

chapter |6 pages

Magnetoreflectivity study of electron-LO phonon interaction in Pb1-xEuxTe and PbTe/Pb1-xEuxTe MultiQuantum Wells

ByShu Yuan, H. Krenn, G. Springholz, G. Bauer, P. J. McCann

chapter |5 pages

Upper and lower valence band energy spectra of narrow gap semiconductor solid solutions of Bi2- x Sn x Te3 crystals

ByV.A. Kulbachinskii, M. Inoue, M. Sasaki, H. Negishi, W.X. Gao, Y. Giman, P. Lostak, J. Horak

chapter |5 pages

IV-VI misfit dislocation superlattices as zero-dimensional quantum boxes

ByO A Mironov, A I Fedorenko, A Yu Sipatov, K H Herrmann, J W Tomm, V I Litvinov

part Chapter 4|45 pages

III-V Growth and Ordering

chapter |5 pages

RHEED and XPS Study of Oxide Desorption from InSb(100) Substrates

ByW.K. Liu, M.B. Santos

chapter |5 pages

Low Temperature, Damage-Free Surface Cleaning Of InSb(001) Prior To MBE Growth

ByA.D. Johnson, G.M. Williams, A.J. Pidduck, C.R. Whitehouse, T. Martin, C.T. Elliott, T. Ashley

chapter |5 pages

The Growth of Ternary Substrates of Indium Gallium Antimonide by the Double Crucible Czochralski Technique

ByT. Ashley, J. A. Beswick, B Cockayne, C. T. Elliott.

chapter |5 pages

Slab-Doping of InSb:Er

ByJoseph P. Heremans, Dale L. Partin, Christopher M. Thrush

chapter |5 pages

Optical and Structural Characterisation of InAs/GaSb Superlattices

ByF Fuchs, J Schmitz, N Herres, J Wagner, J D Ralston, P Koidl

chapter |5 pages

Ordering and bandgap reduction in InAs1-xSbx alloys†

ByD M Follstaedt, R M Biefeld, S R Kurtz, L R Dawson, K C Baucom

chapter |5 pages

Remote doping of InAs/GaSb quantum wells by means of a second InAs well doped with silicon

ByT A Malik, S J Chung, R A Stradling, W T Yuen, J J Harris, A G Norman

chapter |5 pages

Metalorganic Vapor Phase Epitaxy of InSb in a Multiwafer Reactor

ByR Rolph, T Zielinski, E Woelk, H Jürgensen

part Chapter 5|23 pages

II–VI Growth

chapter |6 pages

Properties of Hg1-xCdxTe grown on CdZnTe and Si substrate

ByS. Sivananthan, Y.P. Chen, P.S. Wijewarnasuriya, J.P. Faurie, F.T. Smith, P.W. Norton

chapter |5 pages

Molecular Beam Epitaxy Growth and Characterization of Hg1-xMgxTe

ByS Oehling, U Lunz, H Heinke, G Plahl, C R Becker, G Landwehr

chapter |6 pages

New HgCdTe VPE structures on Sapphire by using hybrid substrates

ByS. Bernardi, F. Campanella

chapter |6 pages

Isothermal vapor phase epitaxial growth of large-area HgCdTe film on lattice-matched CdZnTe substrate

ByT S Lee, Y T Jeoung, H K Kim, J M Kim, J M Chang, IH Park, S B Lee, S U Kim, M J Park

part Chapter 6|55 pages

III–V Characterization

chapter |5 pages

Auger Rates in Mid-IR InAsSb Laser Structures

ByH. P. Hjalmarson, S. R. Kurtz

chapter |5 pages

Picosecond free electron laser studies of Auger recombination in InSb and InAsSb systems

ByB.N. Murdin, C.R. Pidgeon, D.A. Jaroszynski, C.C. Phillips, R.A. Stradling, C.M. Ciesla, R. Praseres, C.J.G.M. Langerak

chapter |5 pages

Spin-conserving and Spin-flip Transitions between hybrid magneto-electric Subbands in InAs/A1Sb Quantum Wells

ByC. Gauer, A. Wixforth, J.P. Kotthaus, M. Kubisa, W. Zawadzki, B. Brar, H. Kroemer

chapter |5 pages

Bistable Switching between Dissipative and Quantum Hall Conduction in InSb, InGaAs and GaAs

ByG Nachtwei, A Linke, M Thiede, C Breitlow, H Scherer, F-J Ahlers, L Bliek, H Künzel, J Böttcher

chapter |5 pages

Far Infrared Free Electron and "Impurity-Shifted" Cyclotron Resonance in Te-doped GaSb

ByR.J. Wagner, B.R. Bennett, B.V. Shanabrook, J.R. Waterman, M.D. Goldenberg

chapter |5 pages

Long wavelength photoresponse of short period InAs/GaSb superlattices

ByM. Lakrimi, T.A. Vaughan, R.J. Nicholas, N.J. Mason, P.J. Walker

chapter |5 pages

Far-IR Spectroscopy of Semiconducting and Semimetallic InAs/Al x Ga1- x Sb Quantum Wells in High Magnetic Fields

ByJ Kono, B D McCombe, J P Cheng, I Lo, W C Mitchel, C E Stutz

chapter |5 pages

First observation of sharp excitonic photoluminescence from high purity epitaxial InAs

ByY. Lacroix, S.P. Watkins, C.A. Tran, M.L.W. Thewalt

chapter |5 pages

The electronic states of GaAs/AlGaAs Fibonacci quasi-periodic superlattice

ByH. B. Mao, W. Lu, Z. H. Ma, J. M. Zhang, S. Jiang, S. C. Shen

chapter |5 pages

Subband Landau Levels from the Magneto-Capacitance Spectroscopies

ByKun Liu, Junhao Chu, Shading Guo, Dingyuan Tang

part Chapter 7|42 pages

Infrared Photodetectors

chapter |4 pages

Infrared photodetectors using capacitance variation in InAs1-xSbx MIS devices

ByY. Zhang, J. E. Fumeaux

chapter |5 pages

Photocurrent Spectra of InAs/Ga 0.75 In 0.25 Sb Superlattices With Infrared Detector Structure

ByX. L. Huang, W. Z. Shen, W. Lu, S. C. Shen., T. G. Andersson

chapter |5 pages

Electro-Optical Filters and Modulators Based on Intersubband Processes in InAs-GaSb-AlSb-Family Double Quantum Wells

ByJ. R. Meyer, C. A. Hoffman, F. J. Bartoli, L. R. Ram-Mohan

chapter |5 pages

TWO COLOR Hg1-xCdxTe PHOTOCONDUCTIVE IR DETECTORS SENSITIVE TO RADIATION FROM 3-5 μm and 8-14 μm BANDS

ByXing-Can Zhang, Cheng-Cai Huang, Ze-Xiu Wang, Wei Li, Zheng-Lun Tian, Min Zhang

chapter |5 pages

Random Telegraph Noise in HgCdTe Photodiodes

ByIwao Sugiyama, Toshiyuki Ueda, Nobuyuki Kajihara, Yoshihiro Miyamoto

chapter |6 pages

Modeling of multiple InGaAs/GaAs quantum well infrared photodetectors

ByM Ershov, V Ryzhii

part Chapter 8|25 pages

Transport Devices

chapter |5 pages

Electronic devices based on III-V/V heterostructures

ByT. D. Golding, J. R. Meyer, J. Huang, C. A. Hoffman, E.G. Wang, J. H. Xu, J.T. Zborowski

chapter |5 pages

ECR-RIE of HgTe/CdTe and InAs/GaSb heterostructures patterned using nanochannel glass

ByC.R. Eddy, R.J. Tonucci, D.H. Pearson, J.R. Meyer, C.A. Hoffman

chapter |5 pages

Defects and Electric Property Characterization of Multi-electrode Hg1-xCdxTe Hall Devices

ByY. Cai, G.Z. Zheng, X.C. Zhu, J.H. Jiang, S.L. Guo, D.Y. Tang

chapter |5 pages

Cyclotron Resonance and Hall Effect Studies of Ultra-high Mobility InSb Films

ByY. Zhang, J. Su, J. Winesett, J.E. Furneaux, W.K. Liu, M.B. Santos, R.E. Doezema

chapter |5 pages

Far-infrared studies of InAs quantum wells with Nb electrodes

ByE.L. Yuh, J.G.E. Harris, E.G. Gwinn, K.C. Wong, H. Kroemer

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