Skip to main content
Taylor & Francis Group Logo
    Advanced Search

    Click here to search products using title name,author name and keywords.

    • Login
    • Hi, User  
      • Your Account
      • Logout
      Advanced Search

      Click here to search products using title name,author name and keywords.

      Breadcrumbs Section. Click here to navigate to respective pages.

      Book

      Compound Semiconductors 1995
      loading

      Book

      Compound Semiconductors 1995

      DOI link for Compound Semiconductors 1995

      Compound Semiconductors 1995 book

      Proceedings of the Twenty-Second International Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August to 2 September 1995

      Compound Semiconductors 1995

      DOI link for Compound Semiconductors 1995

      Compound Semiconductors 1995 book

      Proceedings of the Twenty-Second International Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August to 2 September 1995
      Edited ByJong-Chun Woo, Yoon Soo Park
      Edition 1st Edition
      First Published 1996
      eBook Published 29 October 2020
      Pub. Location Boca Raton
      Imprint CRC Press
      DOI https://doi.org/10.1201/9781003063025
      Pages 1312
      eBook ISBN 9781003063025
      Subjects Engineering & Technology
      Share
      Share

      Get Citation

      Woo, J.-C., & Park, Y.S. (Eds.). (1996). Compound Semiconductors 1995: Proceedings of the Twenty-Second International Symposium on Compound Semiconductors held in Cheju Island, Korea, 28 August to 2 September 1995 (1st ed.). CRC Press. https://doi.org/10.1201/9781003063025

      ABSTRACT

      Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.

      TABLE OF CONTENTS

      part Chapter 1|32 pages

      Plenary and Perspective

      chapter |6 pages

      Evolution of Compound Semiconductor Microelectronics for Nanoelectronics

      ByTakuo Sugano

      chapter |6 pages

      Optimization of GaAs-based HEMTs for microwave and millimeter wave IC applications

      ByT Grave

      chapter |6 pages

      Photonics: An Information Age Technology

      ByR. F. Leheny

      chapter |4 pages

      Present and Future of Group III Nitride Semiconductors

      ByIsamu Akasaki, Hiroshi Amano

      chapter |6 pages

      Gap between microelectronics and nanoelectronics

      ByT. Ikoma, T. Hiramoto, K. Hirakawa

      chapter |4 pages

      One Million Transistor Circuits in GaAs

      ByLouis R. Tomasetta

      part Chapter 2|274 pages

      Epitaxy and Processing Technologies

      chapter |6 pages

      Cubic phase GaN: Correlation between growth kinetics and material quality

      ByO Brandt, H Yang, M Ramsteiner, J Menniger, K H Ploog

      chapter |6 pages

      Molecular Beam Epitaxy with Gaseous Sources: Growth and Applications of Mixed Group V Compounds and Selective-Area Growth

      ByC.W. Tu, X.B. Mei, N.Y. Li, H.K. Dong

      chapter |6 pages

      The dependence on growth temperatures of the electrical and structural properties of GaSb/InAs single quantum well structures grown by MBE

      ByS. J. Chung, A.G. Norman, W.T. Yuen, T. Malik, R.A. Stradling

      chapter |6 pages

      Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si

      ByL Däweritz, P Schützendübe, K Stahrenberg, M Maier, K Ploog

      chapter |6 pages

      Lateral compositional change of InAlAs on non-planer substrates by molecular beam epitaxy

      ByTakeyoshi Sugaya, Tadashi Nakagawa, Yoshinobu Sugiyama

      chapter |6 pages

      Hydrogenation effect in nitrogen doped ZnSe films grown by molecular beam epitaxy

      ByM. D. Kim, E. S. Oh, J. R. Kim, H. D. Jeong, B. J. Kim, H. S. Park, T. I. Kim, W. C. Choi

      chapter |6 pages

      Real time in-situ thickness control of Fabry Perot cavities and thin quantum wells in MBE by ellipsometry

      ByC. H. Kuo, M. D. Boonzaayer, Sonu Daryanani, G. N. Maracas

      chapter |4 pages

      1.55 μm (GaIn)(AsP)-MQW-Laser Diodes Grown by Chemical Beam Epitaxy

      ByG. Tränkle, R. Müller, A. Nutsch, B. Torabi, G. Weimann

      chapter |6 pages

      Facet formation and selective area epitaxy of InGaAs by chemical beam epitaxy using unprecracked monoethylarsine

      BySung-Bock Kim, Seong-Ju Park, Jeong-Rae Ro, El-Hang Lee

      chapter |6 pages

      Molecular beam epitaxy and mobility enhancement of InxGa1-xAs/In0.52Al0.48As/InP HEMT structure

      ByDong-Wan Roh, Hae-Gwon Lee, Jae-Jin Lee, Kwang-Eui Pyun, Kee-Soo Nam

      chapter |6 pages

      Substrate orientation dependence of lateral composition modulation in (GaP)n(InP)n strained short period superlattices grown by gas source MBE

      ByS. J. Kim, H. Asahi, K. Asami, T. Ishibashi, S. Gonda

      chapter |6 pages

      The influence of surface reconstructions on the GaAs/AlAs interface formation by MBE

      ByN T Moshegov, L V Sokolov, A I Toropov, A K Bakarov, A K Kalagin, V V Tichomirov

      chapter |6 pages

      Growth and characterization of diluted magnetic semiconductor Zn1-xMnxSe/ZnSe strained-layer superlattice

      ByC.X. Jin, Z. Ling, G.C. Yu, J. Wang, Xun Wang

      chapter |6 pages

      Selective Epitaxial Growth of Si1-xGex on SiO2-patterned Si Substrate Using Elemental Source Molecular Beam Epitaxy

      BySun Jin Yun, Seung-Chang Lee, Jae-Jin Lee, Kee-Soo Nam

      chapter |6 pages

      A RHEED study of the growth of InAs on InAs(111)A

      ByT. Nomura, I. Kamiya, M. R. Fahy, J. H. Neave, B. A. Joyce

      chapter |6 pages

      Atomic Force Microscopy and Growth Modeling of GaN Nucleation Layers on (001) GaAs by Metalorganic Chemical Vapor Deposition

      ByKun Wang, Dimitris Pavlidis, Jasprit Singh

      chapter |6 pages

      Effects of the mask geometry on the selective-area growth by metalorganic chemical vapor deposition

      ByT. Itagaki, M. Takemi, T. Takiguchi, T. Kimura, Y. Mihashi, S. Takamiya

      chapter |4 pages

      Production of P-type GaN in a Multi-wafer-rotating-disc Reactor

      ByC Yuan, R Walker, T Salagaj, A Gurary, W Kroll, R A Stall, M Schurman, C Hwang, Y Li, Y Lu, W E Mayo, S Krishnankutty, R M Kolbas, S J Pearton

      chapter |6 pages

      Lateral growth rate enhancement on patterned GaAs substrates with CC14 by MOCVD

      BySeong-Il Kim, Yong Kim, Seong-Min Hwang, Moo-Sung Kim, Suk-Ki Min

      chapter |6 pages

      The study of the interface between GaAs substrate and the regrowth GaAs layer formed by MBE and MOCVD

      ByH Fujimoto, M Tanabe, A Tamura

      chapter |6 pages

      Erbium δ-doping to InP by OMVPE

      ByY. Fujiwara, N. Matsubara, J. Yuhara, M. Tabuchi, K. Fujita, N. Yamada, Y. Nonogaki, Y. Takeda, K. Morita

      chapter |6 pages

      MOVPE Growth of Compressively Strained GaInP/AlGaInP Structure with MQB

      ByM. Oh, H. Park, C. Lee, G. Lim, T. Kira, J. Kim, T. Kim

      chapter |6 pages

      Epitaxial growth and characterization of GaN films on 6H-SiC by MOVPE

      ByOk-Hyun Nam, Gyeungho Kim, Dalkeun Park, Ji-Beom Yoo, Dong-Wha Kum

      chapter |4 pages

      Effect of strain and growth temperature on In incorporation and properties of high power laser diodes in MOVPE grown (In,Ga)(As,P)/GaAs

      ByF. Bugge, G. Erbert, S. Gramlich, I. Rechenberg, U. Zeimer, M. Weyers

      chapter |6 pages

      MOVPE growth of (Ga,In)(As,P)/GaAs for high-power laser diodes

      ByA. Knauer, F. Bugge, G. Erbert, A. Oster, M. Weyers

      chapter |6 pages

      Carbon doped GaAs grown by MOVPE using CBr4

      ByP. Kurpas, E. Richter, D. Gutsche, F. Brunner, M. Weyers

      chapter |6 pages

      MOVPE-Grown AlGaInP (411)A-like Micro-Facets on Nonplanar Substrates

      ByC. Anayama, T. Tanahashi

      chapter |6 pages

      AFM observation of atomically flat heterointerface of GaInAs/InP grown by OMVPE

      ByMichihiko Suhara, Chuma Nagao, Yasuyuki Miyamoto, Kazuhito Furuya

      chapter |6 pages

      Properties of GaInP-based Materials for UHB-LED Production grown in Multiwafer Planetary Reactors

      ByR. Beccard, J. Knauf, G. Lengeling, D. Schmitz, H. Jürgensen

      chapter |4 pages

      Novel Empirical Expression and Kinetic Analysis for the Incorporation of As and P in InGaAsP Grown by Metal-Organic Vapor Phase Epitaxy

      BySeung Won Lee, Jeong Soo Kim, Hyung Mun Kim, Hong Man Kim, Kwang Eui Pyun, Hyung Moo Park

      chapter |4 pages

      Study on HgCdTe/CdZnTe grown by Isothermal Vapor Phase Epitaxy

      ByT S Lee, J M Chang, W S Song, S U Kim, M J Park, Y T Jeoung, S M Park, H K Kim, J M Kim, S H Kim

      chapter |6 pages

      Epitaxial Growth of 3C–SiC(111) Thin Film on Si Wafer by Rapid Thermal Chemical Vapor Deposition using Tetramethylsilane

      ByY. H. Seo, K. S. Nahm, E.-K. Suh, Y. H. Lee, H. J. Lee, Y. G. Hwang

      chapter |6 pages

      GaN films prepared by hot-wall epitaxy

      ByE. Yamamoto, K Ishino, M. Ohta, M. Kuwabara, S. Sakakibara, A. Ishida, H. Fujiyasu

      chapter |6 pages

      Strain Relaxation and Crystallographic Tilt of Compositional Graded InxGa1-xAs and InxAl1-xAs (0<x<0.3) Epilayers Grown on GaAs Substrates

      ByJ.-L. Shieh, J.-I. Chyi, J.-W. Pan, R.-M. Lin

      chapter |6 pages

      Distribution of As atoms in InP/InPAs/InP and InP/InGaAs/InP hetero-structures measured by X-ray CTR scattering

      ByM. Tabuchi, K. Fujibayashi, N. Yamada, K. Hagiwara, A. Kobashi, H. Kamei, Y. Takeda

      chapter |6 pages

      Applications of Liftoff Technology

      ByJohn C. C. Fan

      chapter |6 pages

      Formation of High Electrical Resistance Region in (InAs)/(AlSb) Superlattice by Ga Focused Ion Beam Implantation

      BySong Gang Kim, Hajime Asahi, Shun-ichi Gonda, Soon Jae Yu

      chapter |6 pages

      Mg-Based Dual Ion Implantation Technique for High Performance P-channel AlGaAs/InGaAs Heterostructure FETs

      ByN Hara, M Shima, H Suehiro, S Kuroda

      chapter |6 pages

      Intermixing Effect of (InAs)/(AlSb) Superlattice by Ga Ion Implantation

      BySong Gang Kim, Hajime Asahi, Shun-ichi Gonda, Soon Jae Yu

      chapter |6 pages

      Evidence for introduction of extra Si from PECVD SiNx cap during post-implantation annealing of implanted Si due to ion implantation damage in GaAs

      ByKyung Ho Lee, Jae-Jin Lee, Kwang Eui Pyun

      chapter |4 pages

      Breakdown mechanism of focused-ion-beam-implantationisolations in a GaAs/AlGaAs heterostructure

      ByS W Hwang, H J Lezec, T Sakamoto, K Nakamura

      chapter |6 pages

      Progress in Sulfur Passivation of GaAs Surfaces

      ByXun Wang, Xiaoyuan Hou

      chapter |6 pages

      Sulfur passivation for thermal stability enhancement of RuO2 Schottky contact on compound semiconductor

      ByEun Kyu Kim, Maeng Ho Son, Ho Nyung Lee, Yong Tae Kim, Suk-Ki Min

      chapter |6 pages

      Combination of selective etching and AFM imaging for the thickness analysis of AlGaAs/GaAs heterostructures

      ByS. Müller, J.L. Weyher, K. Köhler, W. Jantz, C. Frigeri

      chapter |6 pages

      Enhanced Selectivity in GaAs/AlGaAs Selective Dry Etching in BCl3+CF4 Plasma by Adsorbed CxFy for Precise Control of HJFET Threshold Voltages

      ByM. Tokushima, H. Hida, T. Maeda

      chapter |4 pages

      Annealing effects on low-temperature GaN layer grown by Metalorganic chemical vapor deposition

      ByBae-Yong Kim, Yeun-Ho Choi, Chang-Hee Hong, Seung-Hee Kim, Tae- Kyung Yoo

      chapter |6 pages

      Comparison of AuGe/Ni/Au, AuGe/Pd/Au, Ti/Pt/Au, and WSi/Ti/Pt/Au ohmic contacts to n-type InGaAs

      ByS.H. Park, M.P. Park, T-W. Lee, K.M. Song, K.E. Pyun, H-M. Park

      chapter |6 pages

      Direct bonding of lattice-mismatched and orientationmismatched III-V semiconductor wafers: a step toward establishing "Free-Orientation Integration"

      ByYae Okuno, Kazuhisa Uomi

      part Chapter 3|292 pages

      Characterization

      chapter |6 pages

      Time-resolved photoluminescence study of radiative transition processes in GaP1- x N x alloys

      ByHiroyuki Yaguchi, Seiro Miyoshi, Hideo Arimoto, Shiro Saito, Hidefumi Akiyama, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito

      chapter |6 pages

      Reciprocal-Space Analysis of Photoluminescence and Photoluminescence Excitation Spectra

      ByS. D. Yoo, D. E. Aspnes, S. J. Rhee, H. S. Ko, Y. M. Kim, J. C. Woo

      chapter |6 pages

      Photoluminescence, reflectivity, and Raman study of ZnSe, ZnSSe, and ZnMgSSe

      ByEunsoon Oh, S.D. Lee, H.D. Jung, M.D. Kim, J.R. Kim, H.S. Park, B.J. Kim, T.I. Kim

      chapter |6 pages

      Observation of suppressed thermal broadening of photoluminescence linewidth from flow rate modulation epitaxy grown AlGaAs/GaAs quantum wires

      ByXue-Lun Wang, Mutsuo Ogura, Hirofumi Matsuhata, Kazuhiro Komori

      chapter |6 pages

      Spectroscopic characterization for single quantum well structures of compound semiconductors

      ByW Z Shen, S C Shen

      chapter |6 pages

      Critical Energies of Photoreflectance and Lineshape Analysis of Photoluminescence of Heavily Si-Doped GaAs

      ByChul Lee, Nam-Young Lee, Kyu-Jang Lee, Jae-Eun Kim, Hae Yong Park, Dong-Hwa Kwak, Hee Chul Lee, H. Lim

      chapter |6 pages

      Piezoreflectance study of GaAs/AlGaAs digital alloy compositional graded heterostructures

      ByD Y Lin, F C Lin, Y S Huang, H Qiangt, F H Pollak, D L Mathine, G N Maracas

      chapter |6 pages

      Birefringence and mode-conversion in ordered GaInP/AlGaInP optical waveguide structures

      ByA. Moritz, R. Wirth, C. Geng, F. Scholz, A. Hangleiter

      chapter |6 pages

      Suppression of degradation in the crystalline quality of InGaAs/ (Al)GaAs strained quantum-well structures by increasing the barrier thickness

      ByM. Miyashita, S. Karakida, A. Shima, Y. Kajikawa, Y. Mihashi, S. Takamiya

      chapter |4 pages

      Bound state induced absorption in a QW structure

      ByD. W. Kim, S. J. Rhee, Y. M. Kim, H. S. Ko, W. S. Kim, J. C. Woo

      chapter |4 pages

      Fast peak quench of the exciton transition in extremely shallow quantum well structures

      BySungsoo Park, O'Dae Kwon

      chapter |6 pages

      Electrical and optical characterization of GaSb based diode laser material for 2-4 μm applications

      ByD.K. Johnstone, M.A. Marciniak, Y.K. Yeo, R.L. Hengehold, G.W. Turner

      chapter |6 pages

      The Variation of the Structures and Excited Subband States for the Thermal Treated GaAs/AlGaAs Multiple Quantum Wells

      ByY. T. Oh, T. W. Kang, C. Y. Hong, T. W. Kim

      chapter |6 pages

      The band lineup of AlGaInP / AlInP indirect semiconductors

      ByY. Ishitani, E. Nomoto, T. Tanaka, S. Minagawa

      chapter |6 pages

      Temperature Dependence of Type-I Exciton Absorption in Type-II CdSe/ZnTe Heterostructures

      ByE.H. Lee, S. Stoltz, H.C. Chang, W. Y. Yu, I.K. Kang, H. Luo, A. Petrou

      chapter |4 pages

      A new method for estimating band parameters in narrow InGaAs/InAlAs quantum wells at room temperature

      ByN. Kotera, K. Tanaka

      chapter |6 pages

      Determination Of Band Structure Dispersion Curves By Optical Techniques

      ByE. D. Jones, S. K. Lyo, J. F. Klem

      chapter |6 pages

      Strain effect on direct- and indirect-gap band lineups of GaAs1- x P x /GaP quantum wells

      ByAkio Shima, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito

      chapter |4 pages

      Enhancement of carrier confinement in pseudomorphic In x Ga1- x As/GaAs strained quantum wells using interfacial AlAs layers

      ByC. D. Lee, J.Y. Leem, S. K. Noh

      chapter |6 pages

      Strain and Crystallographic Orientation Effects in (11****) (In,Al,Ga)As/GaAs Heterostructures: Physics and Device Applications

      ByE. Towe, P. A. Ramos, R. H. Henderson, D. S. McCullum, X. R. Huang, A. L. Smirl

      chapter |6 pages

      Characterization of lattice-mismatched InGaAs/AlGaAs heterointerface by modified isothermal capacitance transient spectroscopy

      ByShigekazu Izumi, Teruyuki Shimura, Norio Hayafuji, Takuji Sonoda, Saburo Takamiya

      chapter |6 pages

      Interband Transitions in CdxZn1-xTe/ZnTe Strained Single Quantum Wells Grown by Double–Well Temperature–Gradient Vapor Deposition

      ByH. L. Park, S. H. Lee, T. W. Kim

      chapter |6 pages

      Stress in GaAs ridge waveguides integrated with ZnO piezoelectric transducers

      ByHong Koo Kim, Bandar A. Almashary, Walter Kleemeier, Yabo Li, Dietrich W. Langer, Daniel T. Cassidy, Douglas M. Bruce

      chapter |6 pages

      Confined optical vibrations of (311) GaAs/AlAs superlattices

      ByA Milekhin, Yu Pusep, D Lubyshev, V Preobrazhenskii, B Semyagin

      chapter |4 pages

      Confined AlAs LO phonons in GaAs/AlAs superlattices

      ByD.A. Tenne, V.A. Haisler, N.T. Moshegov, A.I. Toropov, I.I. Marakhovka, A.P. Shebanin

      chapter |4 pages

      Photoelastic characterization of slip lines generated by thermal processing with ring holder

      ByM. Yamada, M. Fukuzawa, T. Kawase, M. Tatsumi, K. Fujita

      chapter |4 pages

      Faraday-Stark Electrophotonic Effect

      ByZ.K. Lee, D. Heiman, M. Sundaram, A.C. Gossard

      chapter |4 pages

      Sensitive observation of eigen-energy in InGaAs/InAlAs quantum wells by means of Stark-effect induced shift of photocurrents

      ByK. Tanaka, N. Kotera

      chapter |4 pages

      Intensity oscillations in the magnetoluminescence of a modulation-doped (Al,Ga)As/GaAs single heterojunction

      ByK.-S. Lee, E. H. Lee, C. H. Perry, Y. Kim

      chapter |6 pages

      Magnetotransport, Magneto–Optical, and Electronic Subband Studies in InxGa1-xAs/InyAl1-yAs One–Side–Modulation–Doped Asymmetric Double Quantum Wells

      ByT. W. Kim, M. Jung, D. U. Lee, K. H. Yoo, S. Y. Ryu

      chapter |6 pages

      Exciton formation time measured with Magneto-photoluminescence

      ByJ B Zhu, E Suh, H J Lee, Y G Hwang

      chapter |6 pages

      Characterization of Boron in 6H-SiC Using Optical Absorption

      ByP. W. Yu, K. Mahalingam, W. C. Mitchel, M. D. Roth, D. W. Fischer

      chapter |6 pages

      Photoluminescence Spectra of Heavily Si-doped GaAs at Low Temperature

      ByNam-Young Lee, Jae-Eun Kim, Hae Yong Park, Dong-Hwa Kwak, Hee Chul Lee, H. Lim

      chapter |4 pages

      Characteristics of group VI element DX centers in InGap

      ByS D Kwon, Ho Ki Kwon, Byung-Doo Choe, H Lim

      chapter |6 pages

      Dislocation-related Etch-pits and Deep Level in Strain Relaxed SiGe Layers

      ByH. S. Kim, Y. G. Shin, Y. T. Hwang, J. Y. Kim, H. J. Lee, B. T. Lee, Y. S. Hwang, S. D. Jung

      chapter |4 pages

      Electrical properties in Si/Si1-xGex/Si p-type modulation doped heterostructures

      ByY. T. Hwang, H. S. Kim, S. J. Woo, S. H. Lim, H. J. Lee

      chapter |4 pages

      Ambipolar diffusion in GaAs/AlGaAs quantum wells with inserted AlAs monolayers

      ByF. Faller, B. Ohnesorge, A. Forchel

      chapter |6 pages

      Optical investigation of InGaAs/GaAs heterointerfaces

      ByH. I. Jeon, M. S. Jeong, H. W. Shim, Y. G. Shin, K. Y. Lim, E. -K. Suh, H. J. Lee

      chapter |6 pages

      Deep level investigation of bulk and epitaxial 6H-SiC at high temperatures

      ByJ.D. Scofield, Y.K. Yeo, R.L. Hengehold

      chapter |6 pages

      Negative photoconductivity of AlxGa1-xAs: Sn /GaAs modulation-doped heterostructures

      ByZhongling Peng, Tadashi Saku, Yoshiji Horikoshi

      chapter |6 pages

      The Anomalous Photocondutive Decay of Carbon Doped GaAs

      ByHyunsik Im, Seong-Il Kim, Tae-Geun Kim, Chang-Sik Son, Yong Kim, Moo-Sung Kim, Suk-Ki Min, Yun Chul Chung, Jin Ki Hong, Bo Ick Chang, Sun Ung Kim, Mann Jang Park

      chapter |6 pages

      The Effective Species for Nitrogen doping in ZnSe

      ByF. Ito, T. Hamada, T. Hariu

      chapter |6 pages

      Effect of Ge Interlayers on Threading Dislocation Behavior in GaAs on Si

      ByM. Tamura, T. Saitoh

      chapter |6 pages

      Properties of GaAs LEC single crystals grown at different inert gas pressures

      ByM Seifert, P Rudolph, M Neubert, W Ulrici, J Donecker, J Kluge, E Wolf, D Klinger

      chapter |6 pages

      Fermi-level effect on Ga self-diffusion studied using 69GaAs/69Ga71GaAs isotope superlattice

      ByK. Muraki, Y. Horikoshi

      chapter |4 pages

      Some anomalies in the electron transport of Se-doped AlAs

      ByB. C. Lee, S. S. Cha, Y. G. Shin, K. Y. Lim, C. J. Youn, C. T. Choi, H. J. Lee

      chapter |6 pages

      Temperature coefficients of low-field electron mobility in GaAs/AlGaAs heterostructures

      ByS.K. Noh, J.S. Yuk, G. Ihm, K.Y. Lim, H.J. Lee, C.T. Choi

      chapter |6 pages

      Electron and hole multiplication characteristics in short GaAs PINs

      ByS.A. Plimmer, J.P.R. David, T.W. Lee, G.J. Rees, P.A. Houston, P.N. Robson, R. Grey, D.C. Herbert, A.W. Higgs, D.R. Wight

      chapter |6 pages

      Impact Ionisation Coefficients in (AlxGa1-x)0.52In0.48P

      ByJ.P.R. David, R. Ghin, M. Hopkinson, M.A. Pate, P.N. Robson

      chapter |6 pages

      The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETs

      ByMing-Ta Yang, Yi-Jen Chan, Melvin Chang

      chapter |6 pages

      An XPS study of novel wide band gap Zn x Sr1- x S semiconductors

      BySang Tae Lee, Masahiko Kitagawa, Kunio Ichino, Hiroshi Kobayashi

      chapter |6 pages

      Novel approach to enhance the optical property in AlGaAs and InGaAlP by natural ordering during growth

      ByA. Chin, B. C. Lin, G. L. Gu, K. Y. Hsieh, M. J. Jou, B. J. Lee

      chapter |6 pages

      Characterization of Semiconductors by Laser-Generated Photocharge Voltage Spectroscopy

      ByNam-Chun Park, A. Abbate, P. Das

      part Chapter 4|28 pages

      High Power, High Temperature Devices

      chapter |6 pages

      SiC High Power Devices

      ByCharles E. Weitzel, John W. Palmour, Calvin H. Carter, Karen Moore, Kevin J. Nordquist, Scott Allen, Chris Thero, Mohit Bhatnagar

      chapter |4 pages

      The fabrication of recessed gate GaN MODFET's

      ByJinwook Burm, William J. Schaff, Lester F. Eastman, Hiroshi Amano, Isamu Akasaki

      chapter |6 pages

      Ion-implantation into α-SiC epilayers and application to high-temperature, high-voltage devices

      ByT. Kimoto, A. Itoh, N. Inoue, S. Yaguchi, H. Matsunami

      chapter |6 pages

      Technology of GaAs-Based MMICs for High Temperature Applications

      ByJ Würfl, B Janke, S Thierbach

      chapter |6 pages

      High Power Performance InP/InGaAs Single HBTs

      ByD Sawdai, K Hong, A Samelis, D Pavlidis

      part Chapter 5|212 pages

      Heterojunction Transistors

      chapter |4 pages

      AlGaAs/GaAs HBTs with High Fmax

      ByP M Asbeck, M C Ho, R A Johnson

      chapter |6 pages

      Recent Progress in InP-Based HBT Technology

      ByMadjid Hafizi

      chapter |6 pages

      InGaP/GaAs Drift HBTs with Strained InxGa1-xAs Base

      ByQ. J. Hartmann, D. A. Ahmari, M. T. Fresina, P. J. Mares, J. E. Baker, M. Feng, G. E. Stillman

      chapter |6 pages

      Thermal Stability and Reliability of Nonalloyed Ohmic Contacts on Thin Base InP/InGaAs/InP HBTs

      ByE F Chor, R J Malik, R A Hamm, R W Ryan

      chapter |6 pages

      DC and microwave characteristics of In0.3(AlxGa1-x)0.7As/ In0.3Ga0.7As heterojunction bipolar transistors grown on GaAs

      ByH-P Hwang, J-L Shieh, J-W Pan, C-C Chou, J-I Chyi

      chapter |6 pages

      1/f Noise Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor with a Noise Corner Frequency below 1 kHz

      ByJin-Ho Shin, Joonwoo Lee, Youngseok Suh, Bumman Kim

      chapter |6 pages

      AlGaAs/GaAs Heterojunction Bipolar Transistors with InGaAs Etch-Stop Layer

      ByYosuke Miyoshi, Shin'ichi Tanaka, Norio Goto, Kazuhiko Honjo

      chapter |6 pages

      Investigation of Emitter Degradation in Heterostructure Bipolar Transistors

      ByW A Hagley, R Rutyna, RK Surridge, J M Xu

      chapter |6 pages

      Thermal Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors Including Base Recombination Current Effect

      ByB. U. Ihn, J. Lee, Y. Suh, B. Kim, H. C. Seo, W. Jung, D. S. Ma

      chapter |4 pages

      SiGe HBTs With Very High Germanium Contents In The Base

      ByA. Gruhle, A. Schüppen, H. Kibbel, U. König

      chapter |6 pages

      Piezoelectric effect suppression in GaAs FETs by using Y-shaped gate structures

      ByM. Fukaishi, M. Tokushima, S. Wada, H. Hida, T. Maeda

      chapter |6 pages

      Design and Fabrication Technologies of a One-chip p-i-n / FET for 155 Mbps Local Loop Applications

      ByJeong-Woo Park, Sang-Kee Si, Young-Boo Moon, Cheol-Soo Sone, Deokho Yeo, Moon-Jung Kim, Sung-June Kim, Euijoon Yoon, Chul-Dong Kim, Tae-il Kim

      chapter |4 pages

      A New GaAs BiFET Structure using Selective MOCVD Technique

      ByHyunchol Shin, Jeong-Hwan Son, Young-Se Kwon

      chapter |6 pages

      Novel sub-quarter micron GaAs MESFET process with WSi sidewall gate

      ByT Uda, K Nishii, K Fujimoto, A Tamura

      chapter |6 pages

      A 3.3V GaAs Power MESFET for Digital/Analog Dual-mode Hand-held Phone

      ByJong-Lam Lee, Sung-Jae Maeng, Haecheon Kim, Jae Kyoung Mun, Chang-Seok Lee, Jae Jin Lee, Kwang-Eui Pyun, Hyung-Moo Park

      chapter |6 pages

      GaAs MESFET Model for the Temperature Range from 4 K to 625 K

      ByT Ytterdal, B J Moon, T A Fjeldly, M S Shur

      chapter |4 pages

      High Device Performance of Ion-Implanted WN 0.25μm Gate MESFET Fabricated Using I-line Photolithography with Application to MMIC

      ByEung-Gie Oh, Jeon-Wook Yang, Chul-Soon Park, Kwang-Eui Pyun

      chapter |4 pages

      Non-uniform Light Emission from Parasitic Oscillating GaAs MESFET's

      ByHidemasa Takahashi, Junko Morikawa, Kazunori Asano, Yasunobu Nashimoto

      chapter |6 pages

      A Physically Based High Frequency Noise Model of MESFET's Taking Static Feedback Effect into Account

      ByJong-Hee Han, Jinsu Ko, Kwyro Lee

      chapter |6 pages

      WSi gate GaAs MESFET's with shallow channels fabricated by ion implantation through WSi films

      ByT Uda, H Fujimoto, K Nishii, A Tamura

      chapter |6 pages

      Novel high power GaAs MESFETs with low distortion and high gate-drain breakdown voltage

      ByH Fujimoto, S Morimoto, H Masato, A Tamura

      chapter |4 pages

      A 3.3 V GaAs MESFET Monolithic Driver Amplifier for Digital/Analog Dual-mode Hand-held Phones

      ByMin-Gun Kim, Choong-Hwan Kim, In-Gab Hwang, Eung-Gie Oh, Jeon-Wook Yang, Chang-Seok Lee, Chul-Soon Park, Jong-Lam Lee, Kwang-Eui Pyun, Hyung-Moo Park

      chapter |6 pages

      Fabrication of power MESFETs/Si with a reduced parasitic capacitance

      ByTakashi Aigo, Seiji Takayama, Mitsuhiko Goto, Yasumitsu Ohta, Aiji Jono, Akiyoshi Tachikawa, Akihiro Moritani, Toshihiko Ichioka, Masahiro Akiyama

      chapter |4 pages

      Effects of Buffer Structures on GaAs MESFET's

      ByJae-Jin Lee, Dong-Wook Kim, Hae-Gwon Lee, Kwang-Eui Pyun, Song-Cheol Hong, Young-Se Kwon

      chapter |6 pages

      Anomalous Behaviors of Cut– off Frequencies in 0.5 μm GaAs Power MESFET' s

      ByJ-K Rhee, I-H Lee, S-M Kim

      chapter |6 pages

      Microwave Characteristics of GaAs MESFET with Optical Illumination

      ByH. J. Kim, S. J. Kim, D. M. Kim, H. Chung, D. H. Woo, S. I. Kim, W. J. Choi, I. K. Han, S. H. Kim, J. I. Lee, K. N. Kang, K. Cho

      chapter |6 pages

      Physical Processes of Effective V-F Characteristics for Submicrometer GaAs MESFETs

      ByY Yamada, T Takahashi

      chapter |4 pages

      Effects of Sulfide Treatment on the Gate Voltage Swing of InP MISFETs with Photo-CVD Grown P3N5 Gate Insulator

      ByS. K. Jo, B. H. Lee, M. Y. Jeong, Y. H. Jeong, T. Sugano

      chapter |6 pages

      Low voltage operated GaAs MISFET using a novel self-alignment technique for power amplifiers in mobile communication system

      ByY Ota, M Nishitsuji, H Masato, S Morimoto, H Fujimoto

      chapter |6 pages

      Detection and Mixing of Terahertz Radiation by Two Dimensional Electronic Fluid

      ByM I Dyakonov, M S Shur

      chapter |6 pages

      Photoelectric measurements of interband transitions in fully fabricated pseudomorphic high electron mobility transistors

      ByF Schuermeyer, J P Loehr, R E Sherriff, C Cerny, M Shur

      chapter |6 pages

      Metamorphic In(GaAl)As-HEMTs on GaAs-Substrates

      ByS. Kraus, M. Chertouk, H. Hei, D. Xu, M. Sexl, G. Böhm, G. Tränkle, G. Weimann

      chapter |6 pages

      Device Structure and Substrate Effects on Drain Lag Phenomena in HJFETs

      ByMasanobu Nogome, Kazuaki Kunihiro, Yasuo Ohno

      chapter |4 pages

      Noise Characteristics of AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs with Wide Head T-shaped Gate Fabricated by Optimized Dose Split E-beam Lithography

      ByJin-Hee Lee, Hyung-Sup Yoon, Sang-Soo Choi, Chul-Soon Park, Kwang-Eui Pyun, Hyung-Moo Park

      chapter |4 pages

      Single Low-Voltage Operation of Power Heterojunction FETs for Digital Cellular Applications

      ByNaotaka Iwata, Keiko Inosako, Masaaki Kuzuhara

      chapter |6 pages

      In0.52(AlxGa1-x)0.48As/In0.53Ga0.47As(0****x****1) heterostructure and its application on HEMTs

      ByC.-S. Wu, Y.-J. Chan, C.-H. Chen, J.-L. Shieh, J.-I. Chyi

      chapter |6 pages

      Submicron PHEMT with a dielectric interface gate

      ByMyeong Kook Gong, Jong Wook Yoon, Jhang Woo Lee

      chapter |6 pages

      Al-free GaInP/InGaAs MODFETs on GaAs grown by OMVPE with fT > 100GHz

      ByBoris Pereiaslavets, Karl Bachem, Jurgen Braunstein, Jinwook Burm, Lester F. Eastman

      chapter |4 pages

      AlInAs/GalnAs/AlInAs MODFETs fabricated on InP and on GaAs with metamorphic buffer - a comparison

      ByT. Fink, M. Haupt, K. Köhler, B. Raynor, J. Braunstein, H. Massler, P. J. Tasker

      part Chapter 6|80 pages

      Quantum Effect

      chapter |6 pages

      Controlling dissipation in quantum devices

      ByJean-Pierre Leburton, Yuli Lyanda-Geller

      chapter |6 pages

      Magnetic-field-induced tunneling and minigap transport in double quantum wells

      ByS K Lyo, J A Simmons, N E Harff, T M Eiles, J F Klem

      chapter |4 pages

      Resonant tunneling in asymmetric triple barrier diodes

      ByJ. Jo, K. L. Wang

      chapter |6 pages

      Anomalously Large Stokes and anti-Stokes Real Space Charge Transfer Between Quantum Wells Separated by Thick Alloy Barriers: Beyond the Mean Field Approach

      ByD. S. Kim, H. S. Ko, Y. M. Kim, S. J. Rhee, W. S. Kim, J. C. Woo, H. J. Choi, J. Ihm, D. H. Woo, K. N. Kang

      chapter |6 pages

      Theoretical study of electron tunneling time through a single/double barrier(s), and the effect of wave packet spread

      ByByoungho Lee, Wook Lee

      chapter |4 pages

      Correlation effects on the single electron tunneling through a quantum dot in magnetic fields

      ByKang-Hun Ahn, J. H. Oh, K. J. Chang

      chapter |6 pages

      A Novel Resonant Tunneling Diode with Single-Peak I-V Characteristics

      ByKunihiro Arai, Masafumi Yamamoto

      chapter |6 pages

      GaAs Surface Tunnel Transistors with a symmetric source-to-drain structure

      ByT. Baba, T. Uemura

      chapter |4 pages

      Effects of Photogenerated Carriers on Oscillation Frequency in Resonant Tunneling Structure

      ByHye Yong Chu, El-Hang Lee

      chapter |6 pages

      Quantum Hall Effect Devices of Delta-Doped Al0.25Ga0.75As/ In0.25Ga0.75As /GaAs Pseudomorphic Heterostructures grown by LP-MOCVD

      ByJ. S. Lee, K. H. Ahn, Y. H. Jeong

      chapter |6 pages

      Quantum Hall effect in GaAs/AlGaAs heterostructures:Its breakdown due to current

      ByS Kawaji

      chapter |6 pages

      2D–1D crossover behaviors in low–field magnetotransport

      ByS.K. Noh, K.Y. Lim, G. Ihm, S.J. Lee

      chapter |4 pages

      Two Different Types of the h/e Oscillation in an AlGaAs/ GaAs-based Mesoscopic Ring Structure

      BySeongjae Lee, KyoungWan Park, Mincheol Shin, El-Hang Lee, Hyuk Chan Kwon

      chapter |6 pages

      Aharonov-Bohm oscillations beating and universal conductance fluctuations in a single-mode quantum interferometer

      ByA A Bykov, Z D Kvon, E B Ol'shanetskii

      chapter |4 pages

      Optical-Microwave Signal Mixing in a GaAs Uniplanar Ring Resonator

      ByJong-Chul Lee, Henry F. Taylor, Kai Chang

      part Chapter 7|48 pages

      Nanoelectronics and Nanophotonics

      chapter |6 pages

      Coherent multiatomic step formation on GaAs (001) vicinal surfaces by MOVPE and its application to quantum well wires

      ByT. Fukui, S. Hara, J. Ishizaki, K. Ohkuri, J. Motohisa

      chapter |6 pages

      Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates

      ByWugen Pan, Hiroyuki Yaguchi, Kentaro Onabe, Ryoichi Ito, Noritaka Usami, Yasuhiro Shiraki

      chapter |4 pages

      Magneto-excitons and Landau level states in quantum wire superlattices

      ByH. Weman, M. Potemski, M.S. Miller, M.E. Lazzouni, J.L. Merz

      chapter |4 pages

      Fabrication and Optical Characteristics of GaAs Double-Coupled Quantum-Wires on V-grooved Substrate

      ByKazuhiro Komori, Xue-Lun Wang, Mutsuo Ogura, Hirofumi Matuhata

      chapter |4 pages

      Of Serpents, SADs and Cells Recent Progress on Quantum Structures

      ByJames L. Merz

      chapter |6 pages

      Polarization dependence of optical gain in unstrained and strained InAlGaAs quantum wire arrays

      ByJong Chang Yi, Nadir Dagli

      chapter |6 pages

      Photoluminescence from A Single Quantum Dot

      ByY. Arakawa, Y. Nagamune

      chapter |6 pages

      Nanometer-scale GaAs dot structures fabricated using in-situ gas etching technique with InAs dots as mask

      ByG. Yusa, H. Noge, Y. Kadoya, T. Someya, T. Suga, P. Petroff, H. Sakaki

      chapter |6 pages

      The electronic structure of coupled quantum dots in magnetic fields

      ByJ. H. Oh, K. J. Chang, G. Ihm, S. J. Lee

      part Chapter 8|166 pages

      Optoelectronic and Optical Devices

      chapter |6 pages

      Prospects of surface emitting lasers

      ByK. Iga

      chapter |4 pages

      Visible (630-650 nm) Vertical Cavity Surface Emitting Lasers With Al-Oxide/AlGaInP/AlGaAs Distributed Bragg Reflectors

      ByJ A Lott, L V Buydens, K J Malloy, Ke Kobayashi, S Ishikawa

      chapter |4 pages

      A Single Transverse Mode Operation of Gain -Guided Top Surface Emitting Laser Diodes with a Very Low Series Resistance

      ByT. Kim, T. K. Kim, E. K. Lee, J. Y. Kim, T. I. Kim

      chapter |4 pages

      InGaAs Vertical-Cavity Surface-Emitting Lasers Buried in an Amorphous GaAs Passivation Layer

      ByByueng-Su Yoo, Hye Yong Chu, Min Soo Park, Hyo-Hoon Park, El-Hang Lee

      chapter |6 pages

      High-reflectivity AlAsSb/In(Ga1-xAlx)As distributed Bragg reflectors on InP substrates for 1.3 - 1.5 μm wavelengths

      ByH. Asai, H. Iwamura

      chapter |4 pages

      Anomalous above–threshold spontaneous emission in gain–guided vertical cavity surface emitting lasers

      ByJ H Shin, J K Hwang, K H Ha, Y H Lee

      chapter |4 pages

      High Power Tapered InGaAs/GaAs Laser Diodes with Carbon Doped Cladding Layers Grown by Solid Source Molecular Beam Epitaxy

      ByM. Mikulla, W. Benz, P. Chazan, J. Daleiden, J. Fleissner, G. Kaufel, E.C. Larkins, M. Maier, J.D. Ralston, J. Rosenzweig, A. Wetzel

      chapter |4 pages

      MOCVD-grown Al0.07Ga0.93As high-power laser diode array

      ByN.J. Son, S. Park, J.C. Ahn, O.D. Kwon

      chapter |4 pages

      Picosecond Dynamics of InGaAs Microcavity Lasers -Influence of Carrier Transport/Capture and Gain Flattening

      ByF. Sogawa, A. Hangleiter, H. Watabe, Y. Nagamune, M. Nishioka, Y. Arakawa

      chapter |6 pages

      Ultralow Laser Threshold Operation of InGaAs-GaAsInGaP Strained Quantum Well DFB and DBR Lasers

      ByY. K. Sin

      chapter |6 pages

      Fabrication of Serpentine shaped Laser Diode using Reactive Ion Beam Etching

      ByJung-Hwan Choi, Song-Cheol Hong, Young-Se Kwon

      chapter |6 pages

      Very low threshold current density 1.3μm InAsP/InP/InGaP/InP/ GaInAsP strain-compensated multiple quantum well lasers

      ByA. Kasukawa, N. Yokouchi, N. Yamanaka, N. Iwai

      chapter |4 pages

      High performance strain-compensated 1.3μm MQW-PBH-LD using two-step etching

      ByH. S. Cho, D. H. Jang, J. K. Lee, J. S. Kim, K. H. Park, C. S. Park, H. M. Kim, K.-E. Pyun, H.-M. Park

      chapter |4 pages

      Very low threshold current 630nm band AlGaInP single quantum well laser with strain compensated layers

      ByWon-Jin Choi, Jong-Seok Kim, Meoung-Whan Cho, In-Sung Cho, Shi-Jong Leem, Tae-Kyung Yoo

      chapter |4 pages

      High Temperature Operation of 650nm AlGaInP Laser Diode

      ByG. Lim, D. Shin, S. Kang, M. Oh, J. Kim, T. Kim

      chapter |4 pages

      Optimized Characteristics of 1.55 μm MQW DFB Lasers

      BySang-Kook Han, Jung-Koo Kang, Bo-Hun Choi, Seung-Jo Jeong, Tae-Jin Kim, You-Ri Jo, Yong-Kun Sin

      chapter |6 pages

      High-Temperature Reliability of Aluminium-free 980 nm and 808 nm Laser diodes

      ByJ. Diaz, H. Yi, C. Jelen, S. Kim, S. Slivken, I. Eliashevich, M. Erdtmann, D. Wu, G. Lukas, M. Razeghi

      chapter |6 pages

      Quantum cascade lasers

      ByF Capasso, J Faist, C Sirtori, A L Hutchinson, D L Sivco, A Y Cho

      chapter |6 pages

      Long-Wavelength Lasers and Transmitters: Physics and Technology Roadblocks

      ByP Bhattacharya, H Yoon, A Gutierrez-Aitken, K Kamath, P Freeman

      chapter |4 pages

      Optical Interconnection Technology for Large Computing and Switching Systems

      ByN. K. Dutta

      chapter |6 pages

      Free-Space Integrated Optics on a Chip

      ByMing C. Wu, Lih-Yuan Lin, Shi-Sheng Lee

      chapter |4 pages

      Performance enhancement of non-biased symmetric self electro-optic effect device with extremely shallow multiple quantum wells using an impedancemismatched asymmetric Fabry-Perot structure

      ByK. Kim, O.K. Kwon, Y.W. Choi, E.-H. Lee

      chapter |6 pages

      Nonlinearly Chirped Grating for Extended Tuning Range Semiconductor Lasers

      ByDug-Bong Kim, Tae-Hoon Yoon, Jae Chang Kim, Sun Ho Kim

      chapter |6 pages

      All-optical switching by field-enhancement in MQW structures

      ByC. Knorr, U. Wilhelm, V. Härle, F. Scholz, A. Hangleiter

      chapter |6 pages

      New Infrared Materials and Detectors

      ByM. Razeghi, J. D. Kim, S. J. Park, Y. H. Choi, D. Wu, E. Michel, J. Xu, E. Bigan

      chapter |6 pages

      Monolithic Millimeter Wave Optical Receivers using MSM photodetectors and SMODFET's

      ByJinwook Burm, Kerry I. Litvin, Glenn H. Martin, William J. Schaff, Lester F. Eastman

      chapter |6 pages

      A monolithic ultrahigh-speed InAlAs/InGaAs PINHBT photoreceiver with a bandwidth of 18.6 GHz

      ByK Yang, A L Gutierrez-Aitken, X Zhang, P Bhattacharya, G I Haddad

      chapter |6 pages

      High-speed GaAs photodetectors and photodetector arrays for optical processing

      ByGordon Wood Anderson, Francis J. Kub

      chapter |6 pages

      Background limited performance in aluminum-free p-doped quantum well intersubband photodetectors

      ByJ. Hoff, J. Piotrowski, E. Bigan, M. Razeghi, G. J. Brown

      chapter |4 pages

      PIN-like Si(p)/ZnSe(n-)/ZnSe(n+) visible photodiode

      ByChung-Cheng Chang, Wen-Shiung Lour, Min-Hsiu Chen

      chapter |6 pages

      High-Responsivity InGaAs Metal-Semiconductor-Metal Photodetectors with Semi-Transparent Schottky Contacts

      ByRong-Heng Yuang, Jen-Inn Chyi, Yi-Jen Chan, Wei Lin, Yuan-Kuang Tu*

      chapter |4 pages

      Analysis of avalanche gain with multiplication layer width and application to floating guard ring avalanche photodiode

      ByChan-Yong Park, Kyung-Sook Hyun, Jeong Soo Kim, Seung-Goo Kang, Min Kyu Song, Eun Soo Nam, Hong-Man Kim, Kwang-Eui Pyun, Hyung-Moo Park

      chapter |4 pages

      A Monolithic GaAs Photovoltaic Device Array with A SelfAligned Dielectric Isolation on Sidewall

      ByYoung-Gi Kim, Alec Chen, Kambiz Alavi, Tsay-Jiu Shieh

      part Chapter 9|42 pages

      Visible Emitters

      chapter |6 pages

      GaN based semiconductors for future optoelectronics

      ByDanielle Walker, Patrick Kung, Adam Saxler, Xiaolong Zhang, Manijeh Razeghi, Holger Jürgensen

      chapter |6 pages

      The 6x6 Luttinger-Kohn model of a cubic GaN quantum well

      ByDoyeol Ahn

      chapter |6 pages

      Heterojunction GaN Light Emitting Diodes Grown by Plasma-Assisted Ionized Source Beam Epitaxy

      ByMyung C. Yoo, K.H. Shim, J.M. Myoung, A.T. Ping, K. Kim, I. Adesida

      chapter |6 pages

      Recent Progress in Optical Studies of Wurtzite GaN Grown by Metalorganic Chemical Vapor Deposition

      ByW. Shan, T. Schmidt, X.H. Yang, J.J. Song, B. Goldenberg

      chapter |6 pages

      ZnMgSSe-based Semiconductor Lasers

      ByM Ozawa, S Itoh, A Ishihashi, M Ikeda

      chapter |6 pages

      Growth and characterization of II-VI structures for microcavities, distributed Bragg reflectors, and blue-green lasers

      ByM Pessa, K. Rakennus, P. Uusimaa, A. Salokatve, T Aherne, J P Doran, J Hegarty

      chapter |6 pages

      II-VI blue/green laser diodes on ZnSe substrates

      ByY.S. Park, Z. Yu, C. Boney, W.H. Rowland, W.C. Hughes, J.W. Cook, J.F. Schetzina, Gene Cantwell, William C. Harsch

      part Chapter 10|108 pages

      Modelling and Simulation

      chapter |6 pages

      Device modeling from first principles at the atomic level†

      ByYia-Chung Chang

      chapter |6 pages

      Wannier-Stark states in semiconductor superlattices

      ByC. Hamaguchi, M. Yamaguchi, H. Nagasawa, K. Murayama, M. Morifuji, A. Carlo, P. Vogl, G. Böhm, G. Tränkle, G. Weimann

      chapter |6 pages

      Intersubband transitions to the above-barrier states controlled by electron Bragg mirrors

      ByB. Sung, H. C. Chui, E. L. Martinet, J. S. Harris

      chapter |6 pages

      Windows of full photon-assisted electron transmission via Stark ladder of semiconductor superlattice

      ByO A Tkachenko, V A Tkachenko, D G Baksheyev, A S Jaroshevich

      chapter |4 pages

      Electric field induced type-I to type-II switching in GaAs/AlAs quantum wells

      ByM U Erdoğan, V Sankaran, K W Kim, M A Stroscio, G J Iafrate

      chapter |6 pages

      Effective-Mass Approximation at Heterointerfaces: Intervalley Mixing and Interface Fluctuations

      ByTsuneya Ando

      chapter |4 pages

      Energetics of N-related defects in Zn-based II-VI semiconductors

      ByByoung-Ho Cheong, K. J. Change

      chapter |6 pages

      Miniband formation in graded-gap superlattices

      ByH T Grahn, L Schrottke, K H Ploog, F Agulló-Rueda, U Behn

      chapter |6 pages

      Simple mesoscopic dimensional approach to exciton properties in a quantum well under an applied electric field

      ByB. W. Kim, E. M. Charlson

      chapter |4 pages

      A simple approach for the valence-band structure of strained-layer quantum wells within the 6x6 Luttinger-Kohn model

      BySean J. Yoon, Doyeol Ahn

      chapter |6 pages

      High-Field Electron Transport of the ZnS Phosphor in AC Thin-Film Electroluminescent Devices

      ByInsook Lee, S. Pennathur, K. Streicher, T. K. Plant, J. F. Wager, P. Vogl, S. M. Goodnick

      chapter |6 pages

      r -X Electron Tunneling in AlAs/GaAs/AlAs Doublebarrier Quantum-well Heterostructure

      ByGyungock Kim

      chapter |6 pages

      Modeling of strained quantum-well lasers and comparison with experiments

      ByS L Chuang, C S Chang, J Minch, W Fang

      chapter |4 pages

      Enhanced Carrier and Optical Confinement of Quantum Well Lasers with Graded Multi-Quantum Barriers

      ByJ.-I. Chyi, J.-H. Gau, S.-K. Wang, J.-L. Shieh, J.-W. Pan

      chapter |4 pages

      Negative transconductance and depletion effects in gated resonant tunneling diodes

      ByChomsik Lee

      chapter |6 pages

      Mobility model for III-V compounds suited for hydrodynamic device simulation

      ByCh Köpf, H Kosina, S Selberherr

      chapter |6 pages

      On the optimum supply ratio in low temperature epitaxial growth of comound semiconductors

      ByT. Hariu, T. Ohshima, T. Hamada

      chapter |4 pages

      Role of Surfactant for Suppression of Island Formation on Si(001) Surface

      ByChan Wuk Oh, Young Hee Lee, Hyung Jae Lee

      chapter |6 pages

      A Quantum Mechanical Model For Analysing Capacitance- Voltage Profiles In Quantum-Wells

      ByDipankar Biswas, Sudakshina Kundu, Reshmi Datta

      chapter |6 pages

      Theoretical Study in the Materials Design of Semiconductor Alloys and Low-Dimensional Quantum System

      ByBing-Lin Gu

      part Chapter 11|10 pages

      Late Papers

      chapter |6 pages

      Facet terminated growth of quantum functional devices on patterned substrates

      ByR. Tsui, M. Walther, K. Shiralagi, H. Goronkin

      chapter |4 pages

      Three-Terminal Quantum Devices based on Heterojunction Interband Tunneling

      ByJ. Shen, S. Tehrani, G. Kramer, H. Goronkin, R. Tsui, S. Allen, M. Kyler
      T&F logoTaylor & Francis Group logo
      • Policies
        • Privacy Policy
        • Terms & Conditions
        • Cookie Policy
        • Privacy Policy
        • Terms & Conditions
        • Cookie Policy
      • Journals
        • Taylor & Francis Online
        • CogentOA
        • Taylor & Francis Online
        • CogentOA
      • Corporate
        • Taylor & Francis Group
        • Taylor & Francis Group
        • Taylor & Francis Group
        • Taylor & Francis Group
      • Help & Contact
        • Students/Researchers
        • Librarians/Institutions
        • Students/Researchers
        • Librarians/Institutions
      • Connect with us

      Connect with us

      Registered in England & Wales No. 3099067
      5 Howick Place | London | SW1P 1WG © 2022 Informa UK Limited