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Compound Semiconductors 1995
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Compound Semiconductors 1995 book
Compound Semiconductors 1995
DOI link for Compound Semiconductors 1995
Compound Semiconductors 1995 book
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ABSTRACT
Compound Semiconductors 1995 focuses on emerging applications for GaAs and other compound semiconductors, such as InP, GaN, GaSb, ZnSe, and SiC, in the electronics and optoelectronics industries. The book presents the research and development work in all aspects of compound semiconductors. It reflects the maturity of GaAs as a semiconductor material and the rapidly increasing pool of research information on many other compound semiconductors. Covering the full breadth of the subject, from growth through processing to devices and integrated circuits, this volume provides researchers in materials science, device physics, condensed matter physics, and electrical and electronic engineering with a comprehensive overview of developments in this well-established research area.
TABLE OF CONTENTS
part Chapter 1|32 pages
Plenary and Perspective
chapter |6 pages
Evolution of Compound Semiconductor Microelectronics for Nanoelectronics
chapter |6 pages
Optimization of GaAs-based HEMTs for microwave and millimeter wave IC applications
chapter |4 pages
Present and Future of Group III Nitride Semiconductors
chapter |6 pages
Gap between microelectronics and nanoelectronics
part Chapter 2|274 pages
Epitaxy and Processing Technologies
chapter |6 pages
Cubic phase GaN: Correlation between growth kinetics and material quality
chapter |6 pages
Molecular Beam Epitaxy with Gaseous Sources: Growth and Applications of Mixed Group V Compounds and Selective-Area Growth
chapter |6 pages
The dependence on growth temperatures of the electrical and structural properties of GaSb/InAs single quantum well structures grown by MBE
chapter |6 pages
Real-time study of dopant incorporation and segregation during MBE growth of GaAs(001):Si
chapter |6 pages
Lateral compositional change of InAlAs on non-planer substrates by molecular beam epitaxy
chapter |6 pages
Hydrogenation effect in nitrogen doped ZnSe films grown by molecular beam epitaxy
chapter |6 pages
Real time in-situ thickness control of Fabry Perot cavities and thin quantum wells in MBE by ellipsometry
chapter |4 pages
1.55 μm (GaIn)(AsP)-MQW-Laser Diodes Grown by Chemical Beam Epitaxy
chapter |6 pages
Facet formation and selective area epitaxy of InGaAs by chemical beam epitaxy using unprecracked monoethylarsine
chapter |6 pages
Molecular beam epitaxy and mobility enhancement of InxGa1-xAs/In0.52Al0.48As/InP HEMT structure
chapter |6 pages
Substrate orientation dependence of lateral composition modulation in (GaP)n(InP)n strained short period superlattices grown by gas source MBE
chapter |6 pages
The influence of surface reconstructions on the GaAs/AlAs interface formation by MBE
chapter |6 pages
Growth and characterization of diluted magnetic semiconductor Zn1-xMnxSe/ZnSe strained-layer superlattice
chapter |6 pages
Selective Epitaxial Growth of Si1-xGex on SiO2-patterned Si Substrate Using Elemental Source Molecular Beam Epitaxy
chapter |6 pages
A RHEED study of the growth of InAs on InAs(111)A
chapter |6 pages
Atomic Force Microscopy and Growth Modeling of GaN Nucleation Layers on (001) GaAs by Metalorganic Chemical Vapor Deposition
chapter |6 pages
Effects of the mask geometry on the selective-area growth by metalorganic chemical vapor deposition
chapter |4 pages
Production of P-type GaN in a Multi-wafer-rotating-disc Reactor
chapter |6 pages
Lateral growth rate enhancement on patterned GaAs substrates with CC14 by MOCVD
chapter |6 pages
The study of the interface between GaAs substrate and the regrowth GaAs layer formed by MBE and MOCVD
chapter |6 pages
Erbium δ-doping to InP by OMVPE
chapter |6 pages
MOVPE Growth of Compressively Strained GaInP/AlGaInP Structure with MQB
chapter |6 pages
Epitaxial growth and characterization of GaN films on 6H-SiC by MOVPE
chapter |4 pages
Effect of strain and growth temperature on In incorporation and properties of high power laser diodes in MOVPE grown (In,Ga)(As,P)/GaAs
chapter |6 pages
MOVPE growth of (Ga,In)(As,P)/GaAs for high-power laser diodes
chapter |6 pages
Carbon doped GaAs grown by MOVPE using CBr4
chapter |6 pages
MOVPE-Grown AlGaInP (411)A-like Micro-Facets on Nonplanar Substrates
chapter |6 pages
AFM observation of atomically flat heterointerface of GaInAs/InP grown by OMVPE
chapter |6 pages
Properties of GaInP-based Materials for UHB-LED Production grown in Multiwafer Planetary Reactors
chapter |4 pages
Novel Empirical Expression and Kinetic Analysis for the Incorporation of As and P in InGaAsP Grown by Metal-Organic Vapor Phase Epitaxy
chapter |4 pages
Study on HgCdTe/CdZnTe grown by Isothermal Vapor Phase Epitaxy
chapter |6 pages
Epitaxial Growth of 3C–SiC(111) Thin Film on Si Wafer by Rapid Thermal Chemical Vapor Deposition using Tetramethylsilane
chapter |6 pages
GaN films prepared by hot-wall epitaxy
chapter |6 pages
Strain Relaxation and Crystallographic Tilt of Compositional Graded InxGa1-xAs and InxAl1-xAs (0<x<0.3) Epilayers Grown on GaAs Substrates
chapter |6 pages
Distribution of As atoms in InP/InPAs/InP and InP/InGaAs/InP hetero-structures measured by X-ray CTR scattering
chapter |6 pages
Formation of High Electrical Resistance Region in (InAs)/(AlSb) Superlattice by Ga Focused Ion Beam Implantation
chapter |6 pages
Mg-Based Dual Ion Implantation Technique for High Performance P-channel AlGaAs/InGaAs Heterostructure FETs
chapter |6 pages
Intermixing Effect of (InAs)/(AlSb) Superlattice by Ga Ion Implantation
chapter |6 pages
Evidence for introduction of extra Si from PECVD SiNx cap during post-implantation annealing of implanted Si due to ion implantation damage in GaAs
chapter |4 pages
Breakdown mechanism of focused-ion-beam-implantationisolations in a GaAs/AlGaAs heterostructure
chapter |6 pages
Sulfur passivation for thermal stability enhancement of RuO2 Schottky contact on compound semiconductor
chapter |6 pages
Combination of selective etching and AFM imaging for the thickness analysis of AlGaAs/GaAs heterostructures
chapter |6 pages
Enhanced Selectivity in GaAs/AlGaAs Selective Dry Etching in BCl3+CF4 Plasma by Adsorbed CxFy for Precise Control of HJFET Threshold Voltages
chapter |4 pages
Annealing effects on low-temperature GaN layer grown by Metalorganic chemical vapor deposition
chapter |6 pages
Comparison of AuGe/Ni/Au, AuGe/Pd/Au, Ti/Pt/Au, and WSi/Ti/Pt/Au ohmic contacts to n-type InGaAs
chapter |6 pages
Direct bonding of lattice-mismatched and orientationmismatched III-V semiconductor wafers: a step toward establishing "Free-Orientation Integration"
part Chapter 3|292 pages
Characterization
chapter |6 pages
Time-resolved photoluminescence study of radiative transition processes in GaP1- x N x alloys
chapter |6 pages
Reciprocal-Space Analysis of Photoluminescence and Photoluminescence Excitation Spectra
chapter |6 pages
Photoluminescence, reflectivity, and Raman study of ZnSe, ZnSSe, and ZnMgSSe
chapter |6 pages
Observation of suppressed thermal broadening of photoluminescence linewidth from flow rate modulation epitaxy grown AlGaAs/GaAs quantum wires
chapter |6 pages
Spectroscopic characterization for single quantum well structures of compound semiconductors
chapter |6 pages
Critical Energies of Photoreflectance and Lineshape Analysis of Photoluminescence of Heavily Si-Doped GaAs
chapter |6 pages
Piezoreflectance study of GaAs/AlGaAs digital alloy compositional graded heterostructures
chapter |6 pages
Birefringence and mode-conversion in ordered GaInP/AlGaInP optical waveguide structures
chapter |6 pages
Suppression of degradation in the crystalline quality of InGaAs/ (Al)GaAs strained quantum-well structures by increasing the barrier thickness
chapter |4 pages
Bound state induced absorption in a QW structure
chapter |4 pages
Fast peak quench of the exciton transition in extremely shallow quantum well structures
chapter |6 pages
Electrical and optical characterization of GaSb based diode laser material for 2-4 μm applications
chapter |6 pages
The Variation of the Structures and Excited Subband States for the Thermal Treated GaAs/AlGaAs Multiple Quantum Wells
chapter |6 pages
The band lineup of AlGaInP / AlInP indirect semiconductors
chapter |6 pages
Temperature Dependence of Type-I Exciton Absorption in Type-II CdSe/ZnTe Heterostructures
chapter |4 pages
A new method for estimating band parameters in narrow InGaAs/InAlAs quantum wells at room temperature
chapter |6 pages
Determination Of Band Structure Dispersion Curves By Optical Techniques
chapter |6 pages
Strain effect on direct- and indirect-gap band lineups of GaAs1- x P x /GaP quantum wells
chapter |4 pages
Enhancement of carrier confinement in pseudomorphic In x Ga1- x As/GaAs strained quantum wells using interfacial AlAs layers
chapter |6 pages
Strain and Crystallographic Orientation Effects in (11****) (In,Al,Ga)As/GaAs Heterostructures: Physics and Device Applications
chapter |6 pages
Characterization of lattice-mismatched InGaAs/AlGaAs heterointerface by modified isothermal capacitance transient spectroscopy
chapter |6 pages
Interband Transitions in CdxZn1-xTe/ZnTe Strained Single Quantum Wells Grown by Double–Well Temperature–Gradient Vapor Deposition
chapter |6 pages
Stress in GaAs ridge waveguides integrated with ZnO piezoelectric transducers
chapter |6 pages
Confined optical vibrations of (311) GaAs/AlAs superlattices
chapter |4 pages
Confined AlAs LO phonons in GaAs/AlAs superlattices
chapter |4 pages
Photoelastic characterization of slip lines generated by thermal processing with ring holder
chapter |4 pages
Faraday-Stark Electrophotonic Effect
chapter |4 pages
Sensitive observation of eigen-energy in InGaAs/InAlAs quantum wells by means of Stark-effect induced shift of photocurrents
chapter |4 pages
Intensity oscillations in the magnetoluminescence of a modulation-doped (Al,Ga)As/GaAs single heterojunction
chapter |6 pages
Magnetotransport, Magneto–Optical, and Electronic Subband Studies in InxGa1-xAs/InyAl1-yAs One–Side–Modulation–Doped Asymmetric Double Quantum Wells
chapter |6 pages
Exciton formation time measured with Magneto-photoluminescence
chapter |6 pages
Characterization of Boron in 6H-SiC Using Optical Absorption
chapter |6 pages
Photoluminescence Spectra of Heavily Si-doped GaAs at Low Temperature
chapter |4 pages
Characteristics of group VI element DX centers in InGap
chapter |6 pages
Dislocation-related Etch-pits and Deep Level in Strain Relaxed SiGe Layers
chapter |4 pages
Electrical properties in Si/Si1-xGex/Si p-type modulation doped heterostructures
chapter |4 pages
Ambipolar diffusion in GaAs/AlGaAs quantum wells with inserted AlAs monolayers
chapter |6 pages
Optical investigation of InGaAs/GaAs heterointerfaces
chapter |6 pages
Deep level investigation of bulk and epitaxial 6H-SiC at high temperatures
chapter |6 pages
Negative photoconductivity of AlxGa1-xAs: Sn /GaAs modulation-doped heterostructures
chapter |6 pages
The Anomalous Photocondutive Decay of Carbon Doped GaAs
chapter |6 pages
Effect of Ge Interlayers on Threading Dislocation Behavior in GaAs on Si
chapter |6 pages
Properties of GaAs LEC single crystals grown at different inert gas pressures
chapter |6 pages
Fermi-level effect on Ga self-diffusion studied using 69GaAs/69Ga71GaAs isotope superlattice
chapter |4 pages
Some anomalies in the electron transport of Se-doped AlAs
chapter |6 pages
Temperature coefficients of low-field electron mobility in GaAs/AlGaAs heterostructures
chapter |6 pages
Electron and hole multiplication characteristics in short GaAs PINs
chapter |6 pages
Impact Ionisation Coefficients in (AlxGa1-x)0.52In0.48P
chapter |6 pages
The reduction of impact ionization and improvement of device reliability in heterostructure doped-channel FETs
chapter |6 pages
An XPS study of novel wide band gap Zn x Sr1- x S semiconductors
chapter |6 pages
Novel approach to enhance the optical property in AlGaAs and InGaAlP by natural ordering during growth
chapter |6 pages
Characterization of Semiconductors by Laser-Generated Photocharge Voltage Spectroscopy
part Chapter 4|28 pages
High Power, High Temperature Devices
chapter |6 pages
SiC High Power Devices
chapter |4 pages
The fabrication of recessed gate GaN MODFET's
chapter |6 pages
Ion-implantation into α-SiC epilayers and application to high-temperature, high-voltage devices
chapter |6 pages
Technology of GaAs-Based MMICs for High Temperature Applications
chapter |6 pages
High Power Performance InP/InGaAs Single HBTs
part Chapter 5|212 pages
Heterojunction Transistors
chapter |6 pages
InGaP/GaAs Drift HBTs with Strained InxGa1-xAs Base
chapter |6 pages
Thermal Stability and Reliability of Nonalloyed Ohmic Contacts on Thin Base InP/InGaAs/InP HBTs
chapter |6 pages
DC and microwave characteristics of In0.3(AlxGa1-x)0.7As/ In0.3Ga0.7As heterojunction bipolar transistors grown on GaAs
chapter |6 pages
1/f Noise Characteristics of AlGaAs/GaAs Heterojunction Bipolar Transistor with a Noise Corner Frequency below 1 kHz
chapter |6 pages
AlGaAs/GaAs Heterojunction Bipolar Transistors with InGaAs Etch-Stop Layer
chapter |6 pages
Investigation of Emitter Degradation in Heterostructure Bipolar Transistors
chapter |6 pages
Thermal Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors Including Base Recombination Current Effect
chapter |4 pages
SiGe HBTs With Very High Germanium Contents In The Base
chapter |6 pages
Piezoelectric effect suppression in GaAs FETs by using Y-shaped gate structures
chapter |6 pages
Design and Fabrication Technologies of a One-chip p-i-n / FET for 155 Mbps Local Loop Applications
chapter |4 pages
A New GaAs BiFET Structure using Selective MOCVD Technique
chapter |6 pages
Novel sub-quarter micron GaAs MESFET process with WSi sidewall gate
chapter |6 pages
A 3.3V GaAs Power MESFET for Digital/Analog Dual-mode Hand-held Phone
chapter |6 pages
GaAs MESFET Model for the Temperature Range from 4 K to 625 K
chapter |4 pages
High Device Performance of Ion-Implanted WN 0.25μm Gate MESFET Fabricated Using I-line Photolithography with Application to MMIC
chapter |4 pages
Non-uniform Light Emission from Parasitic Oscillating GaAs MESFET's
chapter |6 pages
A Physically Based High Frequency Noise Model of MESFET's Taking Static Feedback Effect into Account
chapter |6 pages
WSi gate GaAs MESFET's with shallow channels fabricated by ion implantation through WSi films
chapter |6 pages
Novel high power GaAs MESFETs with low distortion and high gate-drain breakdown voltage
chapter |4 pages
A 3.3 V GaAs MESFET Monolithic Driver Amplifier for Digital/Analog Dual-mode Hand-held Phones
chapter |6 pages
Fabrication of power MESFETs/Si with a reduced parasitic capacitance
chapter |4 pages
Effects of Buffer Structures on GaAs MESFET's
chapter |6 pages
Anomalous Behaviors of Cut– off Frequencies in 0.5 μm GaAs Power MESFET' s
chapter |6 pages
Microwave Characteristics of GaAs MESFET with Optical Illumination
chapter |6 pages
Physical Processes of Effective V-F Characteristics for Submicrometer GaAs MESFETs
chapter |4 pages
Effects of Sulfide Treatment on the Gate Voltage Swing of InP MISFETs with Photo-CVD Grown P3N5 Gate Insulator
chapter |6 pages
Low voltage operated GaAs MISFET using a novel self-alignment technique for power amplifiers in mobile communication system
chapter |6 pages
Detection and Mixing of Terahertz Radiation by Two Dimensional Electronic Fluid
chapter |6 pages
Photoelectric measurements of interband transitions in fully fabricated pseudomorphic high electron mobility transistors
chapter |6 pages
Metamorphic In(GaAl)As-HEMTs on GaAs-Substrates
chapter |6 pages
Device Structure and Substrate Effects on Drain Lag Phenomena in HJFETs
chapter |4 pages
Noise Characteristics of AlGaAs/InGaAs/GaAs Pseudomorphic HEMTs with Wide Head T-shaped Gate Fabricated by Optimized Dose Split E-beam Lithography
chapter |4 pages
Single Low-Voltage Operation of Power Heterojunction FETs for Digital Cellular Applications
chapter |6 pages
In0.52(AlxGa1-x)0.48As/In0.53Ga0.47As(0****x****1) heterostructure and its application on HEMTs
chapter |6 pages
Submicron PHEMT with a dielectric interface gate
chapter |6 pages
Al-free GaInP/InGaAs MODFETs on GaAs grown by OMVPE with fT > 100GHz
chapter |4 pages
AlInAs/GalnAs/AlInAs MODFETs fabricated on InP and on GaAs with metamorphic buffer - a comparison
part Chapter 6|80 pages
Quantum Effect
chapter |6 pages
Controlling dissipation in quantum devices
chapter |6 pages
Magnetic-field-induced tunneling and minigap transport in double quantum wells
chapter |6 pages
Anomalously Large Stokes and anti-Stokes Real Space Charge Transfer Between Quantum Wells Separated by Thick Alloy Barriers: Beyond the Mean Field Approach
chapter |6 pages
Theoretical study of electron tunneling time through a single/double barrier(s), and the effect of wave packet spread
chapter |4 pages
Correlation effects on the single electron tunneling through a quantum dot in magnetic fields
chapter |6 pages
A Novel Resonant Tunneling Diode with Single-Peak I-V Characteristics
chapter |6 pages
GaAs Surface Tunnel Transistors with a symmetric source-to-drain structure
chapter |4 pages
Effects of Photogenerated Carriers on Oscillation Frequency in Resonant Tunneling Structure
chapter |6 pages
Quantum Hall Effect Devices of Delta-Doped Al0.25Ga0.75As/ In0.25Ga0.75As /GaAs Pseudomorphic Heterostructures grown by LP-MOCVD
chapter |6 pages
Quantum Hall effect in GaAs/AlGaAs heterostructures:Its breakdown due to current
chapter |6 pages
2D–1D crossover behaviors in low–field magnetotransport
chapter |4 pages
Two Different Types of the h/e Oscillation in an AlGaAs/ GaAs-based Mesoscopic Ring Structure
chapter |6 pages
Aharonov-Bohm oscillations beating and universal conductance fluctuations in a single-mode quantum interferometer
chapter |4 pages
Optical-Microwave Signal Mixing in a GaAs Uniplanar Ring Resonator
part Chapter 7|48 pages
Nanoelectronics and Nanophotonics
chapter |6 pages
Coherent multiatomic step formation on GaAs (001) vicinal surfaces by MOVPE and its application to quantum well wires
chapter |6 pages
Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates
chapter |4 pages
Magneto-excitons and Landau level states in quantum wire superlattices
chapter |4 pages
Fabrication and Optical Characteristics of GaAs Double-Coupled Quantum-Wires on V-grooved Substrate
chapter |6 pages
Polarization dependence of optical gain in unstrained and strained InAlGaAs quantum wire arrays
chapter |6 pages
Nanometer-scale GaAs dot structures fabricated using in-situ gas etching technique with InAs dots as mask
chapter |6 pages
The electronic structure of coupled quantum dots in magnetic fields
part Chapter 8|166 pages
Optoelectronic and Optical Devices
chapter |4 pages
Visible (630-650 nm) Vertical Cavity Surface Emitting Lasers With Al-Oxide/AlGaInP/AlGaAs Distributed Bragg Reflectors
chapter |4 pages
A Single Transverse Mode Operation of Gain -Guided Top Surface Emitting Laser Diodes with a Very Low Series Resistance
chapter |4 pages
InGaAs Vertical-Cavity Surface-Emitting Lasers Buried in an Amorphous GaAs Passivation Layer
chapter |6 pages
High-reflectivity AlAsSb/In(Ga1-xAlx)As distributed Bragg reflectors on InP substrates for 1.3 - 1.5 μm wavelengths
chapter |4 pages
Anomalous above–threshold spontaneous emission in gain–guided vertical cavity surface emitting lasers
chapter |4 pages
High Power Tapered InGaAs/GaAs Laser Diodes with Carbon Doped Cladding Layers Grown by Solid Source Molecular Beam Epitaxy
chapter |4 pages
MOCVD-grown Al0.07Ga0.93As high-power laser diode array
chapter |4 pages
Picosecond Dynamics of InGaAs Microcavity Lasers -Influence of Carrier Transport/Capture and Gain Flattening
chapter |6 pages
Ultralow Laser Threshold Operation of InGaAs-GaAsInGaP Strained Quantum Well DFB and DBR Lasers
chapter |6 pages
Fabrication of Serpentine shaped Laser Diode using Reactive Ion Beam Etching
chapter |6 pages
Very low threshold current density 1.3μm InAsP/InP/InGaP/InP/ GaInAsP strain-compensated multiple quantum well lasers
chapter |4 pages
High performance strain-compensated 1.3μm MQW-PBH-LD using two-step etching
chapter |4 pages
Very low threshold current 630nm band AlGaInP single quantum well laser with strain compensated layers
chapter |4 pages
High Temperature Operation of 650nm AlGaInP Laser Diode
chapter |4 pages
Optimized Characteristics of 1.55 μm MQW DFB Lasers
chapter |6 pages
High-Temperature Reliability of Aluminium-free 980 nm and 808 nm Laser diodes
chapter |6 pages
Quantum cascade lasers
chapter |6 pages
Long-Wavelength Lasers and Transmitters: Physics and Technology Roadblocks
chapter |4 pages
Optical Interconnection Technology for Large Computing and Switching Systems
chapter |4 pages
Performance enhancement of non-biased symmetric self electro-optic effect device with extremely shallow multiple quantum wells using an impedancemismatched asymmetric Fabry-Perot structure
chapter |6 pages
Nonlinearly Chirped Grating for Extended Tuning Range Semiconductor Lasers
chapter |6 pages
All-optical switching by field-enhancement in MQW structures
chapter |6 pages
New Infrared Materials and Detectors
chapter |6 pages
Monolithic Millimeter Wave Optical Receivers using MSM photodetectors and SMODFET's
chapter |6 pages
A monolithic ultrahigh-speed InAlAs/InGaAs PINHBT photoreceiver with a bandwidth of 18.6 GHz
chapter |6 pages
High-speed GaAs photodetectors and photodetector arrays for optical processing
chapter |6 pages
Background limited performance in aluminum-free p-doped quantum well intersubband photodetectors
chapter |4 pages
PIN-like Si(p)/ZnSe(n-)/ZnSe(n+) visible photodiode
chapter |6 pages
High-Responsivity InGaAs Metal-Semiconductor-Metal Photodetectors with Semi-Transparent Schottky Contacts
chapter |4 pages
Analysis of avalanche gain with multiplication layer width and application to floating guard ring avalanche photodiode
chapter |4 pages
A Monolithic GaAs Photovoltaic Device Array with A SelfAligned Dielectric Isolation on Sidewall
part Chapter 9|42 pages
Visible Emitters
chapter |6 pages
GaN based semiconductors for future optoelectronics
chapter |6 pages
Heterojunction GaN Light Emitting Diodes Grown by Plasma-Assisted Ionized Source Beam Epitaxy
chapter |6 pages
Recent Progress in Optical Studies of Wurtzite GaN Grown by Metalorganic Chemical Vapor Deposition
chapter |6 pages
Growth and characterization of II-VI structures for microcavities, distributed Bragg reflectors, and blue-green lasers
chapter |6 pages
II-VI blue/green laser diodes on ZnSe substrates
part Chapter 10|108 pages
Modelling and Simulation
chapter |6 pages
Wannier-Stark states in semiconductor superlattices
chapter |6 pages
Intersubband transitions to the above-barrier states controlled by electron Bragg mirrors
chapter |6 pages
Windows of full photon-assisted electron transmission via Stark ladder of semiconductor superlattice
chapter |4 pages
Electric field induced type-I to type-II switching in GaAs/AlAs quantum wells
chapter |6 pages
Effective-Mass Approximation at Heterointerfaces: Intervalley Mixing and Interface Fluctuations
chapter |4 pages
Energetics of N-related defects in Zn-based II-VI semiconductors
chapter |6 pages
Miniband formation in graded-gap superlattices
chapter |6 pages
Simple mesoscopic dimensional approach to exciton properties in a quantum well under an applied electric field
chapter |4 pages
A simple approach for the valence-band structure of strained-layer quantum wells within the 6x6 Luttinger-Kohn model
chapter |6 pages
High-Field Electron Transport of the ZnS Phosphor in AC Thin-Film Electroluminescent Devices
chapter |6 pages
r -X Electron Tunneling in AlAs/GaAs/AlAs Doublebarrier Quantum-well Heterostructure
chapter |6 pages
Modeling of strained quantum-well lasers and comparison with experiments
chapter |4 pages
Enhanced Carrier and Optical Confinement of Quantum Well Lasers with Graded Multi-Quantum Barriers
chapter |4 pages
Negative transconductance and depletion effects in gated resonant tunneling diodes
chapter |6 pages
Mobility model for III-V compounds suited for hydrodynamic device simulation
chapter |6 pages
On the optimum supply ratio in low temperature epitaxial growth of comound semiconductors
chapter |4 pages
Role of Surfactant for Suppression of Island Formation on Si(001) Surface
chapter |6 pages
A Quantum Mechanical Model For Analysing Capacitance- Voltage Profiles In Quantum-Wells
chapter |6 pages
Theoretical Study in the Materials Design of Semiconductor Alloys and Low-Dimensional Quantum System
part Chapter 11|10 pages
Late Papers