ABSTRACT

Providing a comprehensive overview of developments to both the academic and industrial communities, Compound Semiconductors 1996 covers all types of compound semiconducting materials and devices. The book includes results on blue and green lasers, heterostructure devices, nanoelectronics, and novel wide band gap semiconductors. With invited review papers and research results in current topics of interest, this volume is part of a well-known series of conferences for the dissemination of research results in the field.

chapter Chapter 1|31 pages

Plenary Papers

chapter |17 pages

The semiconductor heterostructures: History and future trends

ByZh I Alferov

chapter |6 pages

Criteria for the Growth of III-Nitrides for Blue-Green Emitting Devices

ByB. Wachtendorf, O. Schön, E. Woelk, D. Schmitz, G. Strauch, H. Jiirgensen

chapter |7 pages

Wide Band Gap Semiconductors. Good Results and Great Expectations

ByMichael S Shur, M Asif Khan

chapter Chapter 2|144 pages

Nanoelectronics and Nanophotonics

chapter |4 pages

Optoelectronic 2-D MESFET

ByF Schuermeyer, N Bunger, W. C. B. Peatman, M S Shur

chapter |4 pages

Emerging Heterodimensional Electronics for Ultra Low Power Applications

ByT Ytterdal, M Shur, W C B Peatman, M Hurt, R Tsai

chapter |6 pages

Application of controllable crack formation for nanoelectronic device elements fabrication

ByV.Ya. Prinz, V.A. Seleznev, A.K. Gutakovsky

chapter |4 pages

Hot holes in strained MQW InGaAs/GaAs and Ge/GeSi heterostructures

ByV Ya Aleshkin, A A Andronov, A V Antonov, N A Bekin, I V Erofeeva, V I Gavrilenko, O A Kuznetsov, E R Lin’kova, I G Malkina, M D Moldavskaya, D G Revin, E A Uskova, B N Zvonkov

chapter |4 pages

Strain-Related Excitonic In-Plane Optical Anisotropy in (100) InGaAs/InAlAs/InP MQWs

ByA. Dimoulas, R. Tober, H. D. Young, R. Leavitt, A. Christou

chapter |4 pages

Influence of Refractive Index Contrast on Photonic Band Gap in 3D Periodic SiO2 Matrices Filled with a Semiconductor

ByV. N. Astratov, Yu. A. Vlasov, V. N. Bogomolov, A. A. Kaplyanskii, O. Z. Karimov, D.A. Kurdjukov, A. V. Prokofiev

chapter |4 pages

Carrier transport processes in RTS with type II heterojunctions

ByV Gergel, I Lapushkin, A Zakharova, H Goronkin, S Tehrani

chapter |4 pages

6H-SiC Natural Diffusion Nanostructures

ByN T Bagraev, L E Klyachkin, A M Malyarenko, V L Sukhanov, A V Suvorov, N V Zabrodskaya

chapter |4 pages

Self-consistent field approach to the study of potential in quantum wires

ByL Fedichkin, M Karlsteen, M Willander, V Ryzhii

chapter |4 pages

Microwave modulated reflectance as a method of novel modulation spectroscopy of semiconductor heterostructures

ByO A Ryabushkin, V A Sablikov, M P Meleshkevich, A N Pershikov

chapter |4 pages

Characterization of Esaki-Tsu Superlattices Using X-Ray and Transport Investigations

ByJ Grenzer, E Schomburg, T Blomeiert, I Lingott, I Lagleder, K Hofbeck, A A Ignatov, K F Renk, U Pietsch, D G Pavel’ev, Yu Koschurinov, B Ya Melzer, V Ustinov, A Zhukov, S Ivanov, S Schaposchnikov, N N Faleev, P S Kop’ev

chapter |4 pages

Electron phase transitions and ordered states engineering in multiple quantum wells

ByYu V Kopaev, N V Kornyakov

chapter |4 pages

Two-dimensional electron systems in oriented curved surfaces

ByLev I Magarill, Dmitry A Romanov, Alexander V Chaplik

chapter |4 pages

Current-carrying magnetic states engineering by nonmonotonic potential profile

ByD A Romanov, S A Studenikin, V A Tkachenko, O A Tkachenko

chapter |4 pages

Transport properties of AlAs/GaAs multilayer structures grown on (311)A GaAs substrates

ByI A Panaev, V Ya Prinz, A B Vorob’ev, V V Preobrazhensky, B R Semyagin

chapter |4 pages

Growth-induced self-organization of composition-modulated structures in InGaAsP alloys

ByI.S. Tarasov, L.S. Vavilova, I.P. Ipatova, A.V. Lyutetskiy, A.V. Murashova, N.A. Pikhtin, V.A. Shchukin, Zh.I. Alferov

chapter |4 pages

The DX-Centre Assisted Quenching of Persistent Photoconductivity by High Electric Fields in GaAs Delta-Doped by Sn on Vicinal Substrate Structures

ByV A Kulbachinskii, R A Lunin, V G Kytin, E V Bogdanov, A S Bugaev, A P Senichkin

chapter |4 pages

Acousto-optic effects of surface acoustic waves in semiconductor quantum well structures

ByC. Rocke, A. Wixforth, J.P. Kotthaus, W. Klein, H. Böhm, G. Weimann

chapter |4 pages

Optical properties of InAlAs/InP type II heterostructures grown on (111)B InP substrates

ByY. Kawamura, A. Kamada, K. Yoshimatsu, H. Kobayashi, H. Iwamura, N. Inoue

chapter |4 pages

Far IR impurity photoconductivity in strained MQW Ge/GeSi heterostructures

ByV Gavrilenko, I Erofeeva, A Korotkov, Z Krasil’nik, O Kuznetsov, M Moldavskaya, V Nikonorov, L Paramonov

chapter |4 pages

New effects due to local illumination of semiconductor heterostructures with two-dimensional electron gas

ByO A Ryabushkin, V A Sablikov, A O Volkov, V G Mokerov

chapter |3 pages

Optical and electrical properties of the CdS/PbS Thue-Morse and Fibonacci superlattices at visible and UV regions

ByS F Musikhin, V I II’in, O V Rabizo, L G Bakueva

chapter |4 pages

Pulse Photoluminescence of Porous 6HSiC Films

ByV.F. Agekyan, A. A. Lebedev, A.A. Lebedev, Yu.V. Rud’, Yu. A. Stepanov

chapter |4 pages

Population inversion and IR emission under real space transfer: prospect for a new source

ByV Aleshkin, A Andronov, A Antonov, N Bekin, V Gavrilenko, A Muravjev, S Pavlov, D Revin, V Shastin, E Linkova, I Malkina, E Uskova, B Zvonkov

chapter |4 pages

Infrared and far-infrared absorption and emission by hot carriers in GaAs/AlGaAs and Ge/GeSi multiple quantum wells

ByL.E. Vorobjev, L.E. Golub, D.V. Donetsky, E.A. Zibik, Yu.V. Kochegarov, D.A. Firsov, V.A. Shalygin, V. Ya. Aleshkin, O.A. Kuznetsov, L.K. Orlov, E. Towe, I.I. Saydashev, T.S. Cheng, C.T. Foxon

chapter |4 pages

Upper-Barrier Localized Excitons in (In,Ga)As/GaAs Bragg Confining Superstructures

ByM R Vladimirova, A V Kavokin, M A Kaliteevski, S I Kokhanovskii, M E Sasin, R P Seisyan, V M Ustinov

chapter |4 pages

Electron Microscopy and Optical Characterization of Lattice of Photonic Crystals

ByYu.G. Musikhin, V.N. Astratov, N.A. Bert, V.N. Bogomolov, A.A. Kaplynskii, O.Z. Karimov, Yu. A. Vlasov

chapter |4 pages

Temperature broadening of exciton absorption lines and polaritonic processes in quantum wells of (In,Ga)As/GaAs heterostructures

ByG N Aliev, V A Kosobukint, N V Luk’vanovat, M M Moiseeva, R P Seisyant, H Gibbs, G Khitrova

chapter |4 pages

The optical behaviour of the absorption edge of thin GaAs crystals with the “super-quantum” thickness

ByG N Aliev, N V Luk’yanova, MR Vladimirova, V N Bessolov, H Gibbs, G Khitrova

chapter |4 pages

Exciton Orientation-to-Alignment Convert ion in Type-II GaAs/AlAs Superlattices

ByR.I. Dzhioev, H.M. Gibbs, E.L. Ivchenko, G. Khitrova, V.L. Korenev, M.N. Tkachuk, B.P. Zakharchenya

chapter Chapter 3|178 pages

Epitaxy and In-situ Processing

chapter |6 pages

Controlled Growth of SiC and GaN by Sublimation Sandwich Method

ByE.N. Mokhov, Y.A. Vodakov

chapter |4 pages

Azimuth Dependence of the Crystal Quality of GaN Grown on (001) GaAs by MOMBE and its Improvement by Annealing

ByA. Takeuchi, H. Tsuchiya, M. Kurihara, F. Hasegawa

chapter |4 pages

Self-organization of GaN Nano-structures on C-AI2O3 by RF-Radical Gas Source Molecular Beam Epitaxy

ByM Yoshizawa, A Kikuchi, M Mori, N Fujita, K Kishino

chapter |3 pages

Gallium Nitride Thick Layers: Epitaxial Growth and Separation from Substrates

ByV V Bel’kov, V M Botnaryuk, L M Fedorov, I I Diakonu, V V Krivolapchyuk, M P Scheglov, Yu V Zhilyaev

chapter |4 pages

Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy

ByM.A.L. Johnson, Zhonghai Yu, C. Boney, W.H. Rowland, W.C. Hughes, J.W. Cook, J.F. Schetzina, N.A. El-Masry, M.T. Leonard, H.S. Kong, J.A. Edmond

chapter |4 pages

Heteroepitaxy of Si1-xGex Layers and Ge-Si1-xGex Superlattices on Si(100) Substrates by GeH4-Si MBE: Growth Kinetics and Structural Studies

ByL. K. Orlov, V. A. Tolomasov, A. V. Potapov, V. I. Vdovin, M. G. Mil’vidskii

chapter |4 pages

Control of Spatial Distribution of as Clusters in Lt GaAs by Indium Delta-Doping

ByV.V. Chaldyshev, N.A. Bert, N.N. Faleev, A.E. Kunitsyn, V.V. Tret’yakov, V.V. Preobrazhenskii, M.A. Putyato, B.R. Semyagin

chapter |6 pages

Growth and Characterization of (In,Ga)(N,P) on GaP

ByC.W. Tu, W.G. Bi

chapter |4 pages

Tilted Pseudomorphic ZnTe(310)/ZnSe(001) Heterostructure Grown by MBE

ByS. V. Sorokin, S. V. Ivanov, G. N. Mosina, L. M. Sorokin, Yu. G. Musikhin, P. S. Kop’ev

chapter |4 pages

Interrelation between XRD and TEM Characterization of High Quality (ZnMg)(SSe) Based Epilayers and Heterostructures Grown by MBE

ByS. V. Ivanov, R. N. Kyutt, G. N. Mosina, L. M. Sorokin, S. V. Sorokin, Yu. G. Musikhin, P. S. Kop’ev

chapter |4 pages

Doping and non-equilibrium during low-temperature growth (application to MBE)

ByI. Kuskovsky, G.F. Neümark

chapter |4 pages

Stressed InGaAsP films bonded to glass and their optical properties

ByYu. B. Bolkhovityanov, A. S. Jaroshevich, A. V. Katkov, S. N. Kosolobov, A. G. Paulish, H. E. Scheibler, A. S. Terekhov

chapter |4 pages

MBE regrowth on planar and patterned In(GaAs)P layers for monolithic integration

ByW. Passenberg, W. Schlaak, A. Umbach

chapter |4 pages

AlGaN films grown by chloride-hydride chemical vapour deposition (CH CVD)

ByA M Tsaregorodtsev, A N Efimov, A N Pikhtin, I G Pichugin

chapter |4 pages

Parameters of AlGaAs epitaxial layers grown using ultrafast cooling of the growth solution

ByA. V. Abramov, B. Ya. Ber, A.G. Deryagin, N.G. Deryagin, V.I. Kuchinskii, A.V. Merkulov, D.N. Tret’yakov, N.N. Faleev

chapter |4 pages

Chemical Vapor Deposition of GaAs Containing Nanometer Size Clusters

ByV.V. Chaldyshev, I.V. Ivonin, A.E. Kunitsyn, L.G. Lavrentieva, A.I. Veinger, M.D. Vilisova

chapter |4 pages

MBE of GaN with DC-plasma source for nitrogen activation

ByS V Novikov, G D Kipshidze, V B Lebedev, L V Sharonova, A Ya Shik, V V Tret’yakov, V N Jmerik, V M Kuznetsov, A M Gurevich, N N Zinov’ev, C T Foxon, T S Cheng, G B Ren

chapter |4 pages

Growth of GaN layers on GaAs and GaP (111) and (001) substrates by molecular beam epitaxy

ByT.S. Cheng, C.T. Foxon, G.B. Ren, N.J. Jeffs, J.W. Orton, S.V. Novikov, Y. Xin, P.D. Brown, C.J. Humphreys, M. Halliwell

chapter |4 pages

InGaAsP/GaAs elastically strained films grown by liquid phase epitaxy

ByYu. B. Bolkhovityanov, V. L. Alperovich, A. S. Jaroshevich, M. A. Revenko, H. E. Scheibler, A. S. Terekhov, E. M. Trukhanov.

chapter |4 pages

Structural properties of GaAs Layers grown by Molecular Beam Epitaxy at low temperatures

ByG.B. Galiev, V.G. Mokerov, V.B. Cheglakov, T.B. Demkina, A.M. Pashaev

chapter |4 pages

MOVPE self-assembling growth of nanoscaie InP and InAsP islands

ByO.V. Kovalenkov, D.A. Vinokurov, D.A. Livshits, I.S. Tarasov, N.A. Bert, S.G. Konnikov, Zh.I. Alferov

chapter |4 pages

Phase diagram of pseudomorphic binary semiconductor compound crystal

BySergei I. Chikichev, Ivan S. Chikichev

chapter |4 pages

The liquid-phase epitaxy of strained multilayer III-V heterostructures

ByR. Kh. Akchurin, V.A. Zhegalin, D. V. Komarov, T.V. Sakharova.

chapter |4 pages

Si-doped Ga1-xInxSb grown by molecular beam epitaxy

ByJ H Roslund, G Swenson, T G Andersson

chapter |4 pages

The origin of cubic polytype inclusions in CVD-grown epitaxial layers of silicon carbide

ByA.O. Konstantinov, C. Hallin, B. Pétz, O. Kordina, E. Janzén

chapter |4 pages

CHF3+BCI3 Reactive Ion Etching in AlGaAs/GaAs Heterostructures

ByLi-Shyue Lai, Yi-Jen Chan, Hung-Chung Kao

chapter |4 pages

Long-range stress field of misfit dislocations and possibility of perfect epitaxy for semiconductor films

ByE M Trukhanov, A V Kolesnikov, G A Lyubas

chapter |4 pages

Migration Enhanced Epitaxial Growth and Magnetoluminescence Spectroscopy of Quantum Wire

ByY.M. Kim, W.S. Kim, Y.S. Kim, H.S. Ko, D.H. Kim, J.H. Bae, T. Schmiedel, J. Kim, J.Y. Cha, J.W. Lee, H.S. Park, Seong Ju Park, J.C. Woo

chapter |4 pages

Influence of the arsenic molecular form on the stoichiometry of the growth surface during MBE of GaAs

ByV V Preobrazhenskii, R I Nizamov, M A Putyato, B R Semyagin, D I Lubyshev, O P Pchelyakov

chapter |4 pages

Study of GaAs/AlAs heterointerface formation during MBE on a GaAs (311)A surface by RHEED

ByV V Preobrazhenskii, B R Semyagin, M A Putyato, R I Nizamov

chapter |4 pages

Study of Initial Stages of the GaN Growth on Sapphire Substrates

ByW.V. Lundin, B.V. Pushnyi, A.S. Usikov, M.E. Gaevski, M.V. Baidakova, A.V. Sakharov

chapter |4 pages

Kinetic Phase Transitions in the Epitaxial Growth of Compound Semiconductors

ByI P Ipatova, V G Malyshkin, A A Maradudin, V A Shchukin, R F Wallis

chapter |4 pages

Gas-source molecular beam epitaxy of GaN on SIMOX(l 11) substrates using hydrazine

ByV.G. Antipov, A.I. Guriev, V.A. Elyukhin, R.N. Kyutt, A.B. Smirnov, N.N. Faleev, S. A. Nikishin, G.A. Seregm, H. Temkin

chapter |4 pages

Optimization of initial layer for highly-mismatched heteroepitaxial growth: InSb on Si

ByT. Hariu, K. Sawamura, F. Ito, H. Ohba

chapter |4 pages

On the prediction of properties of heterostructures based on quinary A3B5 solid solutions

ByV V Kuznetsov, E R Rubtsov, V I Ratushny, L S Lunin

chapter |4 pages

ZnSe crystals grown by LEC method

ByA. Hruban, W. Dalecki, K. Nowysz, S. Strzelecka

chapter |4 pages

Novel surface cleaning of GaAs and formation of high quality SiNx films by cat-CVD method

ByAkira Izumi, Atsushi Masuda, Shinya Okada, Hideki Matsumura

chapter |4 pages

Deviation from ideality in AlGaP solid solutions

ByA.V. Abramov, N.G. Deryagin, D.N. Tret’yakov

chapter |4 pages

AFM study on MBE kink-flow growth of ordered InAs quantum dots on GaAs (001) vicinal surface misoriented towards the [010] direction

ByV.P. Evtikhiev, A.K. Kryganovskii, A.B. Komissarov, A.N. Titkov, M. Ichida, A. Nakamura

chapter Chapter 4|50 pages

Visible Emitters

chapter |4 pages

Linear and Nonlinear Optical Investigations of GaN and AlGaN/GaN Heterostructures

ByJ.J. Song, A.J. Fischer, W. Shan, B. Goldenberg, G.E. Bulman

chapter |4 pages

Porous GaN

ByM.G. Mynbaeva, D.V. Tsvetkov

chapter |4 pages

Al/Si/Pd Ohmic contact to n-GaP based on the solid phase regrowth principle

ByMoon-Ho Park, L C Wang, D C Dufner, I H Tan, F Kish

chapter |4 pages

A New Technique Comprising Oxygen-Implantation and Crystal Regrowth for Vertical Integration of Optical Devices on Vertical-Cavity Surface Emitting Lasers

ByHiroyuki Uenohara, Kouta Tateno, Yoshitaka Kohama, Yutaka Matsuoka, Hidetoshi Iwamura

chapter |4 pages

Submilliampere vertical-cavity surface-emitting lasers with intracavity contacts and buried lateral current confinement

ByM. Hauser, H. Kratzer, G. Böhm, G. Tränkle, G. Weimann

chapter |4 pages

Pure green (λ=555 nm) light emitting diodes based on GaP:Y

ByA T Gorelenok, A V Kamanin, M V Shpakov

chapter |4 pages

Visible Photoluminescence of CdTe Anodic Ally Etched Layers

ByA.A. Lebedev, Yu.V. Rud’

chapter |4 pages

Luminescence of high density excitons in GaN

ByD K Nelson, M A Jacobson

chapter |4 pages

Intensive Photoluminescence of Porous SiC Layers Deposited on Silicon Substrates

ByA.M. Danishevskii, V.B. Shuman, E.G. Guk, A. Yu. Rogachev

chapter |4 pages

Light-Emitting Diodes based on GaN

ByA G Drizhuk, M V Zaitsev, V G Sidorov, D V Sidorov

chapter Chapter 5|60 pages

Heterostructure Photocells and Photodetectors

chapter |6 pages

III-V interband and intraband far-infrared detectors

ByManijeh Razeghi, Christopher Jelen, Steve Slivken, Jim Hoff

chapter |4 pages

Spectral behaviour of AlGaAs/GaAs heterophotocells with extremely thin (2–8 nm) window layers

ByV.P. Khvostikov, A.M. Mintairov, P. G. Peevski, V.D. Rumyantsev, S.V. Sorokina

chapter |4 pages

GaAs Metal-Semiconductor-Metal Photodetectors with Recessed Cathodes and/or Anodes

ByRong-Heng Yuang, Jia-Lin Shieh, Jen-Inn Chyi, Jyh-Shin Chen*

chapter |6 pages

High Efficiency, Multijunction GaInP/GaAs Solar Cells

ByJ. M. Olson, Sarah R. Kurtz, D. J. Friedman, Kris Bertness

chapter |4 pages

Tandem solar cells based on AlGaAs/GaAs and GaSb structures

ByV.M. Andreev, V.P. Khvostikov, E.V. Paleeva, V.D. Rumyantsev, S.V. Sorokina, M.Z. Shvarts, V.I. Vasil’ev

chapter |4 pages

III/V-Materials for Tandem-Concentrator Solar Cell Application

ByO.V. Sulima, A. W. Bett, F. Dimroth, S. Keser, G. Stollwerck, W. Wettling

chapter |4 pages

Space Charge Effects in Carrier Escape from Single Quantum Well Structures

ByS.C. McFarlane, J. Barnes, K.W.J. Barnham, E.S.M. Tsui

chapter |3 pages

Temperature dependence of the short-wave quantum efficiency of GaAs and GaP surface-barrier photosensors

ByYu.A. Goldberg, O.V. Konstantinov, E.A. Posse, B.V. Tsarenkov

chapter |4 pages

AlGaAs/GaAs LPE Grown Concentrator Solar Cells

ByV.M. Andreev, V.P. Khvostikov, E.V. Paleeva, M.Z. Shvarts

chapter |4 pages

Sulphide passivation of GaSb/GalnAsSb/GaA1AsSb photodiode heterostructures

ByI.A. Andreev, E.V. Kunitsyna, V.M. Lantratov, T.V. L’vova, M.P. Mikhailova, Yu.P. Yakovlev

chapter |4 pages

The Distinctive Characteristic of Growth and Radiation Response of InP/InGaAs Solar Cells

ByL.B. Karlina, V.V. Kozlovskii, I.A. Mokina, V.A. Solov’ev

chapter |4 pages

Reducing optical absorption in the tunnel diode in tandem solar cells

ByR. Jaakkola, J. Lammasniemi, A. Kazantsev, M. Pessa

chapter Chapter 6|74 pages

Heterostructure Transistors

chapter |6 pages

Recent Developments in Heterostructure Transistors

ByH. Morkoç, S.N. Mohammad

chapter |4 pages

Base Transport in InGaP/GaAs Drift HBTs with a Strained InxGa1-xAs Base

ByQ. J. Hartmann, D. A. Ahmari, M. T. Fresina, J.E. Baker, G. E. Stillman

chapter |4 pages

LT GaAs HFET: a novel concept to overcome the breakdown limitation

ByD. Théron, M. Zaknoime, B. Boudart, J.C. De Jaeger, G. Salmer, K.M. Lipka, M. Birk, H. Heinecke, J. Schneider, B. Splingart, E. Kohn, H. Thomas, D.V. Morgan

chapter |4 pages

Influence of the parameters of the donor layer on the characteristics of N-AlGaAs/InGaAs/GaAs P-HEMTs

ByV.G. Mokerov, D.V. Amelin, A.V. Hook, V.E. Kaminsky, Yu.V. Fedorov, A.S. Shubin, V. Kumar, R. Muraliharan, I. Chandra

chapter |4 pages

Diffusion Noise of GaAs MESFETs and p-HEMTs

ByD. R. Scherrer, D. Caruth, M. Feng

chapter |4 pages

Investigation of Be-distribution profiles in MBE-grown GalnAs for optimization of HBT base structures

ByW. Passenberg, P. Harde, A. Paraskevopoulos

chapter |4 pages

Si/Pd low resistance shallow Ohmic contact to n type Ga0.5In0.5P

ByP. H. Hao, L. C. Wang, F. R. Chien, J.M. Kuo

chapter |4 pages

Dynamics of Base Widening in GaAs Heterojunction Bipolar Transistors

ByV A Posse, B Jalali

chapter |4 pages

Reduced Impact Ionization by Using In0.53(AlxGa1-x)0.47As (x=0.1,0.2) Channel in InP HEMTs

ByLi-Shyue Lai, Yi-Jen Chan, Jan-Wei Pan, Jia-Lin Sheih, Jen-Inn Chyi

chapter |4 pages

Temperature dependence of pseudomorphic complementary HIGFET devices electrical characteristics

ByJean-François Thiery, Hussein Fawaz, Nour Eddine Bourzgui, Linh T. Nuyen, Georges Salmer

chapter |4 pages

Low Temperature Grown InP-based Heterostructures and their Device Application

ByB. Henle, G. Reitemann, E. Kohn

chapter |4 pages

Direct Extraction of Lumped Element Models for 4H-SiC MESFET's on Conducting and Semi-Insulating Substrates

ByK. Moore, C. Weitzel, J. Palmour, S. Allen, C. Carter

chapter |4 pages

Influence of strain compensation in InAlAs/InGaAs pseudomorphic HEMTs on InP

ByX. Letartre, J. Tardy, P.Rojo Romeo, T. Venet, M. Gendry, C. Lugand, T. Benyattou, G. Guillot, Y. Monteil, P. Abraham, M.A. Py, M. Beck

chapter Chapter 7|46 pages

Optoelectronic Integrated Circuits

chapter |4 pages

All-optical modulation near 1.55μm using In1-x-yGaxAlyAs coupled quantum wells

ByR.W. Martin, F. McGow, M. Hopkinson, J.P.R. David

chapter |4 pages

Tunable TE/TM polarization rotation in chemically ordered GaInP /AlGaInP waveguide structures

ByR. Wirth, A. Moritz, C. Geng, F. Scholz, A. Hangleiter

chapter |4 pages

Integration of highly focusing AlGaAs microlensed LED and Double Heterojunction Bipolar Transistors

ByO-Seung Yang, Song-Cheol Hong, Young-Se Kwon

chapter |6 pages

Mid-infrared diode lasers based on III-V alloys for the spectral range 3–4 μm

ByYu P Yakovlev, T N Danilova, O G Ershov, A N Imenkov, K D Moiseev, M P Mikhailova, V V Sherstnev, G G Zegrya

chapter |4 pages

Extremely Low Threshold AlGaAs/InGaAs Quantum Dot Injection Laser

ByV.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, A.R. Kovsh, A.F. Tsatsul’nikov, M.V. Maksimov, S.V. Zaitsev, N.Yu. Gordeev, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg

chapter |4 pages

Improvement of Output Pulse Waveform by Dual Modulation of Three-Terminal Fabry-Perot Diode Laser

ByM.S. Shatalov, S.A. Gurevich, G.S. Simin

chapter |4 pages

Efficient Yb Luminescent Complexes in GaAs

ByN.N. Loyko, V.M. Konnov, T.V. Larikova, V.A. Dravin, V.V. Ushakov, A.A. Gippius

chapter |4 pages

GaInP/AlGaAs/GaAs laser diodes with high output power

ByF. Bugge, G. Beister, G. Erbert, S. Gramlich, K. Vogel, U. Zeimer, M. Weyers

chapter |4 pages

Method for observation of facet degradation and stabilization in InGaAs/AlGaAs laser diodes

ByG. Beister, J. Maege, G. Erbert, I. Rechenberg, J. Sebastian, M. Weyers, J. Würfl

chapter Chapter 8|40 pages

High Power, High Temperature Devices

chapter |4 pages

Impact ionisation and temperature dependence of breakdown in Ga0.52In0.48P

ByR. Ghin, J.P.R. David, M. Hopkinson, M.A. Pate, G.J. Rees, P.N. Robson, D.C. Herbert, A.W. Higgs, D.R. Wight

chapter |4 pages

Compositionally graded buffers on GaAs as substrates for Al0.48In0.52As/Ga0.47In0.53As MODFETs

ByT. Fink, M. Haupt, G. Kaufel, K. Köhler, J. Braunstein, H. Massier

chapter |4 pages

The Growth of GaN on 3C SiC SOI Compliant substrates

ByI. Ferguson, C. Tran, R. Karlicek, R. Stall, J. Devrajan, A. Steckl

chapter |4 pages

Comparative study of the junction characteristics and performance of SiC p+/n and Schottky power rectifiers

ByJ. Scofield, M. Dunn, J. Wiemeri, K. Reinhardt, Y.K. Yeo, R.L. Hengehold

chapter |3 pages

Türn-on process in 4H-SiC thyristors

ByM E Levinshtein, J W Palmour, S L Rumyantsev, R Singh

chapter |4 pages

High Temperature SiC based rectified diodes: new results and prospects

ByA. A. Lebedev, M. G. Rastegaeva, N. S. Savkina, A. S. Tregubova, V.E. Chelnokov, M. P. Scheglov

chapter |4 pages

XPS and TLM characterization of ohmic contacts on SiC

ByO. Noblanc, C. Arnodo, C. Brylinski, S. Cassette, R. Kakanakov, L. Kassamakova, M. Neshev, A. Kakanakova-Georgieva, V. Krastev, Ts. Marinova

chapter |4 pages

Temperature stable Pd-In-Ge/WSiN/Ti/Pt/Au ohmic contacts to GaAs

ByV. Abrosimova, E. Nebauer, P. Ressei, I. Urban, J. Würfl

chapter |4 pages

High-resolution Raman study of (001) n-GaP/n-GaP and n-GaP/n-Si

ByB H Bairamov, E Kernohan, R T Phillips, A Aydinli, G Ulu, N Nazarov, V K Negoduyko, V V Toporov, Yu V Zhilyaev

chapter |4 pages

Investigation of ohmic and Schottky contacts to n-GaN

ByB V Pushnyi, B V Egorov, N M Shmidt

chapter Chapter 9|86 pages

Modelling and Simulation

chapter |4 pages

Monte Carlo Modelling of Impact Ionisation in GaAs

ByR. Ghin, G.M. Dunn, S.A. Plimmer, J.P.R. David, G.J. Rees, D.C. Herbert

chapter |4 pages

Periodical Grating of Quantum Wires inside a Semiconductor Microcavity

ByA.V. Kavokin, M.A. Kaliteevski, M.R. Vladimirova, S.V. Goupalov

chapter |6 pages

Simulating the Modulation Response of Quantum Well Laser Diodes

ByMatt Grupen, Karl Hess

chapter |4 pages

New Dynamic Model for Laterally Nonuniform MQW FP Ridge Laser Including Parasitics

ByS.A. Gurevich, G.S. Simin, M.S. Shatalov

chapter |4 pages

Investigations of lateral current injection lasers

Internal operating mechanisms and doping profile engineering
ByE H Sargent, G L Tan, J M Xu

chapter |4 pages

Modelling of species transport and excess phases formation during sublimation growth of SiC in sandwich system

ByS.Yu. Karpov, N. Makarov, E. N. Mokhov, M. G. Ramm, M. S. Ramm, A. D. Roenkov, R.A. Talalaev, Yu. A. Vodakov

chapter |4 pages

Monte Carlo Simulation Of Impact Ionization Effects In MSM Photodetectors And MESFET's

ByG M Dunn, G J Rees, J P R David

chapter |4 pages

Effective-mass theory of optical intersubband transitions in semiconductor quantum wells

ByE. E. Takhtamirov, V. A. Volkov

chapter |4 pages

Split-gate device simulation

ByV V’yurkov, A Likholyot

chapter |4 pages

Simulation of double avalanche injection filaments in GaAs structures

ByV.A. Vashchenko, Y.B. Martynov, V.F. Sinkevitch

chapter |4 pages

Dispersion of Bulk Exciton Polaritons in a GaAs Microcavity

ByM.R. Vladimirova, A.V. Kavokin

chapter |4 pages

K-space indirect magnetoexcitons in double-quantum-well direct gap heterostructures

ByA A Gorbatsevich, I V Tokatly

chapter |4 pages

Exciton Localization: from Monolayer Islands to Quantum Drops

ByL E Golub, A A Kiselev

chapter |4 pages

Micromechanics of coherent multilayer structures

ByA N Efimov, A O Lebedev, A M Tsaregorodtsev

chapter |4 pages

Topological interaction of impurities with dislocations in cubic semiconductors

ByY T Rebane, V Y Kachorovskii

chapter Chapter 10|92 pages

Quantum Effects

chapter |6 pages

Trions in GaAs Quantum Wells

ByI. Bar-Joseph, G. Finkelstein

chapter |4 pages

Combined exciton-electron transitions in a quantum well with low-dense two-dimensional electron gas

ByV.P. Kochereshko, R.A. Suris, D.R. Yakovlev, A.V. Platonov, W. Ossau, A. Waag, G. Landwehr, Franck Bassani, R.T. Cox, P.C.M. Christianen, J.C. Maan

chapter |4 pages

All-optical switches based on light-induced field enhancement

ByC. Knorr, T. Riedl, E. Fehrenbacher, M. Geiger, D. Ottenwälder, F. Scholz, A. Hangleiter

chapter |4 pages

S-shaped current-voltage characteristics and bistability in the laser generation spectrum of multiple-barrier p-i-n resonant tunneling devices

ByA.A. Toropov, T.V. Shubina, A.V. Lebedev, B.Ya. Mel’tser, P.V. Nekludov, N.D. II’inskaia, M.G. Tkatchman, P.S. Kop’ev, S.M. Cao, M. Willander, P.O. Holtz, J.P. Bergman, B. Monemar

chapter |6 pages

Observation of Shapiro steps and direct evidence of Bloch oscillations in semiconductor superlattices

ByK. Unterrainer, B.J. Keay, M.C. Wanke, S.J. Allen, D. Leonard, G. Medeiros-Ribeiro, U. Bhattacharya, M.J.W. Rodwell

chapter |4 pages

Change from Quantum Interference to Incoherent Hopping Magnetoresistance in Doped n-GaAs and n-CdTe

ByR. Rentzsch, A.N. Ionov, N.V. Agrinskaya, B. Sandow, P. Fozooni, M.J. Lea

chapter |4 pages

Quantum Hall effect in a quantum-well-wire superlattice GaAs/AlAs(311)A

ByM V Yakunin, Yu G Arapov, N A Gorodilov, V N Neverov, S A Buldygin, A B Vorob’ev, I A Panaev, V Ya Prinz, V V Preobrazenskii, B R Semyagin

chapter |4 pages

Weak Localization and Negative Magnetoresistance in Wurtzite-type Crystals

ByF. G. Pikus, G. E. Pikus

chapter |4 pages

Magnetic Anisotropy in Cd1-xMnxTe Alloys Revealed by Polarized Luminescence

ByA.V. Koudinov, Yu.G. Kusrayev, K.V. Kavokin, I.A. Merkulov, B.P. Zakharchenya

chapter |4 pages

High temperature magnetoresistance oscillations in a δ-layer InAs<δ-Si>

ByM V Yakunin, T I Baturina, I A Panaev, B R Semyagin, S A Studenikin

chapter |4 pages

Optical perturbation spectroscopy of modulation-doped InP/InGaAs heterostructures

ByI. A. Buyanova, W. M. Chen, A. V. Buyanov, B. Monemar, W. G. Bi, C. W. Tu

chapter |4 pages

Nonlinear behaviour of the high-frequency conductivity of the 2DEG in the quantum Hall regime as studied by an acoustical method

ByI.L. Drichko, A.M. Diakonov, V.D. Kagan, A.M. Kreshchuk, S.V. Novikov, T.A. Polyanskaya, I. G. Savel’ev, I.Yu. Smirnov, A.V. Suslov

chapter |4 pages

Hole Mixing at GaAs/AlAs(001) Interfaces under Normal Incidence

ByE L Ivchenko, A Yu Kaminski, U Rössler

chapter |4 pages

Magnetoluminescence of Ge/Ge1-xSix multiple quantum well structures

ByN G Kalugin, A V Chernenko, Z F Krasil’nik, O A Kuznetsov

chapter |4 pages

In-plane polarization properties of GaAsP/AlAs strained quantum wells on GaAs(113)A and (114)A Substrates

ByNaozumi Hiroyasu, Hiroyuki Yaguchi, Kentaro Onabe, Yasuhiro Shiraki, Ryoichi Ito

chapter |4 pages

Asymmetric coupled double quantum well structures for low electric field optical modulation

ByR.W. Martin, J. Thompson, A.J. Moseley, D.J. Robbins, N. Carr, M.Q. Kcarlcy, J.E. Metcalf

chapter |4 pages

Heavy-hole g-factor in zinc-blende-based heterostructures

ByA. A. Kiselev, L. V. Moiseev

chapter |4 pages

Experimental evidence of confined optical phonons in GaAs/AlGaAs quantum wires observed from Raman scattering

ByB H Bairamov, A Aydinli, B Tanatar, S Gurevich, B Ya Mel’tser, S V Ivanov, P S Kop’ev, V B Smirnitskii, F N Timofeev

chapter |4 pages

Experimental observation of acoustic plasma oscillations in p-GaAs associated with inter-valence-band photoeffect

ByB H Bairamov, V K Negoduyko, V V Toporov, B P Zakharchenya, A V Voitenko, G Irmer, J Monecke

chapter |4 pages

Direct observation of non-threshold process of Auger recombination in type-I A3B5 quantum wells

ByV P Evtikhiev, I V Kudryashov, V E Tokranov, D V Prilutsky, G G Zegrya

chapter |4 pages

Spin Quantum Beats in Quantum Wells

ByP. Le Jeune, D. Robart, X. Marie, T. Amand, M. Brousseau, J. Barrau

chapter Chapter 11|38 pages

Quantum Dots

chapter |6 pages

Far-infrared and capacitance spectroscopy of self-assembled InAs quantum dots

ByA Lorke, M Fricke, B T Miller, M Haslinger, J P Kotthaus, G Medeiros-Ribeiro, P M Petroff

chapter |4 pages

InGaAs/GaAs Quantum Dot Lasers with Ultrahigh Characteristic Temperature (T0=385K) Grown by Metal Organic Chemical Vapor Deposition

ByM.V. Maximov, I.V. Kochnev, Yu.M. Shemyakov, S.V. Zaitsev, N.Yu. Gordeev, A.F. Tsatsul’nikov, A.V. Sakharov, I.L. Krestnikov, P.S. Kop’ev, Zh.I. Alferov, N.N. Ledentsov, D. Bimberg, A.O. Kosogov, P. Werner, U. Gösele

chapter |4 pages

Optical characterisation of self organised InGaAs / InP heterodots

ByC. Guasch, J. Ahopelto, M. Sopanen, C.M. Sotomayor Torres, I. Gontijo, G.S. Buller

chapter |4 pages

Self-organized InSb quantum dots grown by atomic layer molecular beam epitaxy

ByJC Ferrer, F Peiró, A Cornet, JR Morante, T Utzmeier, G Armelles, F Briones

chapter |4 pages

Dynamics of 2D-3D Transition During InAs on GaAs Heteroepitaxial Growth: Rheed Study

ByG.E. Cirlin, N.P. Korneeva, V.N. Demidov, V.N. Petrov, N.K. Polyakov, V.G. Dubrovskri, G.M. Guryanov, N.N. Ledentsov, D. Bimberg

chapter |4 pages

Semiconductor Quantum Wires: Nonlinear Optical Properties

ByV. Dneprovskii, V. Karavanskii, V Poborchii, I. Salamatina, E. Zhukov

chapter |4 pages

Self-assembled InAs Quantum Dots and Their Applications to Nanostructure Devices Grown on GaAs

ByKanji Yoh, Toshiya Saitoh, Takaya Nakano

chapter |4 pages

Regular 3-Dimensional Ensembles of InSb Quantum Dots - Realization and Conductivity Regimes

ByS.G. Romanov, D.V. Shamshur, A.V. Chernjaev, I. A. Larkin, D.K. Maude, J.C. Portal

chapter |4 pages

Growth and Characterization of Coherent Quantum Dots Formed by Single-and Multi-Cycle InGaAs-GaAs Metal-Organic Chemical Vapor Deposition

ByI.V. Koclmev, N.N. Ledentsov, M.V. Maximov, A.F. Tsatsul’nikov, A.V. Sakharov, B.V. Volovik, P.S. Kop’ev, Zh.I. Alferov, J. Böhrer, D. Bimberg, A.O. Kosogov, S.S. Ruvimov, P. Werner, U. Gösele

chapter Chapter 12|192 pages

Characterization

chapter |6 pages

New Method for Quantitative Characterization of Ordered QD Arrays

ByP.N. Brounkov, N.N. Faleev, Yu.G. Musikhin, A.A. Suvorova, V.M. Ustinov, A.E. Zhukov, A.Yu. Egorov, V.M. Maximov, A.F. Tsatsul’nikov, N.N. Ledentsov, P.S. Kop’ev, S.G. Konnikov

chapter |4 pages

Optical Characteristics of Submicron Structures Grown on Patterned GaAs(111)A Substrates by Molecular Beam Epitaxy

ByK. Fujita, H. Ohnishi, P. O. Vaccaro, T. Watanabe

chapter |4 pages

TEM study of nm-scale semiconductor islands in lattice-mismatched systems

ByA O Kosogov, P Werner, N A Bert, S G Konnikov, A A Suvorova, V M Ustinov, N N Ledentsov, D Bimberg, P Schittenhelm, G Abstreiter

chapter |4 pages

The introduction of dislocations in epilayers of III–V quaternary alloys

ByT.G. Yugova, V.I. Vdovin, M.G. Mi‘vidskii, M.G. Mezhennyi

chapter |6 pages

Band offset asymmetry and optical anisotropy in semiconductor heterostructures with no-common atom

ByOlivier Krebs, Wofgang Seidel, Paul Yoisin

chapter |4 pages

Photoluminescence studies of epitaxial InAsSb and InAsSb:Be grown on GaSb Substrates

ByM.A. Marciniak, R.L. Hengehold, Y.K. Yeo, G.W. Turner, M.W. Prairie

chapter |4 pages

Optical Study of Cubic GaN Layers Grown on (001) GaAs

ByV Yu Davydov, A M Gurevich, I N Goncharuk, B Y Averboukh, N N Zinov’ev, T S Cheng, C T Foxon, J W Orton

chapter |4 pages

Photoluminescence Studies of Undoped and Doped Wurtzite GaN Films Deposited on Sapphire Substrates

ByJ.A. Freitas, A.E. Wickenden, D.D. Koleske, M.A. Khan

chapter |4 pages

Deep Level Trap Characterization of InGaP/GaAs Heterointerface Grown by LP-MOVPE

ByT. Kikkawa, K. Imanishi, K. Fukuzawa, T. Nishioka, M. Yokoyama, H. Tanaka

chapter |4 pages

The Control of Leading Edge Effects in the OMVPE Growth of InGaAsP

ByA.G. Thompson, R.A. Stall, A.I. Gurary, I. Ferguson

chapter |4 pages

Spectroscopic Study of Surface Distribution of Monolayer Island Fluctuations of Heteroboundaries in the Type-II GaAs/AlAs Superlattices

ByM V Belousov, I Ya Gerlovin, H M Gibbs, I V Ignatev, A V Kavokin, G Khitrova, I E Kozin

chapter |4 pages

Observation of the ZnSe/GaAs Heterojunctions with the BeTe Buffer by Cross-Sectional STM

ByA.V. Ankudinov, N.M. Shmidt, A.N. Titkov, H.-J. Lugauer, A. Waag, G. Landwehr

chapter |4 pages

Application of ODMR and level-anticrossing spectroscopy for characterization of GaAs/AlAs superlattices

ByP G Baranov, N G Romanov, A Hofstaetter, A Scharmann, C Schnorr, F J Ahlers, K Pierz

chapter |4 pages

Rutherford Backscattering and Nuclear Reaction Study of Air Annealed CuInSe2 Single Crystals

ByM V Yakushev, G A Medvedkin, R D Tomlinson, A E Hill, R D Pilkington

chapter |4 pages

Origin of short period oscillation near GaAs band-gap energy in photoreflectance

ByInsun Hwang, Jae-Eun Kim, Hae Yong Park, C. D. Lee, Sam Kyu Noh

chapter |4 pages

Crystalline structure of II-VI compounds in the region of wurtzite-zinc blende transition

ByS.A. Permogorov, L.N. Tenishev, M.B. Chernyshov, N.N. Faleev, E.P. Denisov, D.L. Fedorov, P.I. Kuznetsov

chapter |4 pages

Ordered Structures in MOCVD Epitaxial AlGalnP Alloys

ByV I Vdovin, M G Mil’vidskii, A A Chel’nyi

chapter |4 pages

High thermal conductive passivation films on AIGaAs/GaAs heterojunction diodes and bipolar transistors

ByH-P Hwang, Y-S Cheng, J-L Shieh, J-W Pan, J-I Chyi

chapter |4 pages

Structural characterization of InGaAs/InAlAs quantum wells grown on (111)–InP Substrates

ByA Vilà, A Comet, F Peiró, JR Morante, A Georgakilas, N. Becourt, G Halkias

chapter |4 pages

Recombination processes in In1-xGaxP alloys with the “transition” range of compositions

ByYu K Krutogolov, Yu I Kunakin, V V Lebedev

chapter |4 pages

Identification of multivalent molybdenum impurities in SiC crystals

ByJ. Baur, M. Kunzer, K. F. Dombrowski, U. Kaufmann, J. Schneider, P. G. Baranov, E. N. Mokhov

chapter |4 pages

Growth, optical and electrical properties of a new compound semiconductor: HgBr1.6I0.4

ByM Davitri, K Paraskevopoulos, A N Anagnostopoulos, E K Polychroniadis, M M Gospodinov

chapter |4 pages

Quantitative analysis of slip defect generation during thermal processes in GaAs wafers

ByM. Kiyama, T. Takebe, K. Fujita

chapter |4 pages

A3B5 Structures Characterization by Scanning Probe Microscopy

ByV.A. Fedirko, M.D. Eremtchenko, V.M. Daniltzev, O.I. Khrykin, V.I. Shashkin

chapter |4 pages

Defect Study on The Strain-Relaxed InxAll-xAs Epilayers (x<0.4) Grown on GaAs

ByJia-Lin Shieh, Mao-Nan Chang, Yung-Shih Cheng, Jen-Inn Chyi

chapter |4 pages

Subband Electron Mobility in Selectively δ-Doped GaAs/GaAlAs Heterostructures with High Carrier Density

ByV A Kulbachinskii, R A Lunin, V G Kytin, A S Bugaev, V G Mokerov, A P Senichkin

chapter |4 pages

Optical control of internal electrical field in GaAs

ByJ. Vaitkus, M. Sūdžius, L. Bastienė, J. Storasta, K. Jarašiūnas

chapter |4 pages

Raman spectroscopy in III-V compound device technology

ByB Ya Ber, A T Gorelenok, A V Kamanin, A V Merkulov, A M Mintairov, I A Mokina, N M Shmidt, I Yu Yakimenko

chapter |4 pages

Photoluminescence analysis of hydrogen-implanted CuInSe2

ByR.W. Martin, M.V. Yakushev, R.D. Tomlinson, A.E. Hill, R.D. Pilkington

chapter |4 pages

Determination of valence-band offset of p-AlxGa1-xAs/p-Alx 1-xAs-heterojunctions from C-V-measurements

ByM A Melnik, A N Pikhtin, A V Solomonov, V I Zubkov, F Bugge

chapter |4 pages

Optical spectra and phase separation effects in relaxed InGaAs grown by MOVPE method

ByA.S. Vlasov, V.G. Melehin, A.M. Mintairov, V.M. Lantratov, I.V. Kochnev, M.A. Synitsin, B.S. Yavich

chapter |4 pages

Identification of Mn and Ni trace impurities in GaN crystals by electron paramagnetic resonance

ByP.G. Baranov, I.V. Ilyin, E.N. Mokhov, A.D. Roenkov

chapter |4 pages

Comparison of power gain for stimulated Raman scattering in zinc-blende GaP and chalcopyrite CuAlS2

ByB H Bairamov, A Aydinli, I V Bodnar’, Yu V Rud’, V K Nogoduyko, V V Toporov

chapter |4 pages

Diagnostics of semiconductor structures based on InP and its related compounds by vibration spectroscopy

ByA.T. Gorelenok, A.V. Kamanin, I.A. Mokina, N.M. Shmidt, O.V. Titkovaand, I.Yu. Yakimenko

chapter |4 pages

Spectroscopy Studies of P-Type GaAs/AIGaAs MQWs Heavily Doped with Carbon

ByV.N. Astratov, O.Z. Karimov, Yu.A. Vlasov, E. Mao, S. Dickey, B.W. Kim, A. Majerfeld

chapter |4 pages

Photoelectric characterisation of electron-irradiated semi-insulating GaAs crystals

ByK Jarašiūnas, M. SūdŽius, L. Bastienė, V. Gudelis, R. Jašinskaitė, P. Delaye, G. Roosen

chapter |4 pages

Dominant recombination center in 6H-SiC

ByA M Strel’chuk, V V Evstropov

chapter |4 pages

Optical studies of monocrystalline β-FeSi2

ByE.K. Arushanov, R. Carles, Ch Kloc, E. Bucher, J. Leotin, D.V. Smirnov

chapter |4 pages

The influence of thermal annealing on the As-precipitates behavior in SI GaAs

ByS. Strzelecka, M. Pawłowska, A. Hruban, M. Gładysz, E. Wegner, A. Gładki, W. Orłowski

chapter |4 pages

Epitaxial CdF2 Layers on Silicon: Structural Studies and Luminescence of Rare-Earth Ions

ByA.Yu. Khilko, R.N. Kyutt, N.S. Sokolov, M.V. Zamoryanskaya, L.J. Schowalter, Yu.V. Shustermar

chapter |4 pages

Radiative recombination at the interface of type II broken-gap p-GalnAsSb/p-InAs heterojunctions at low temperature

ByN L Bazhenov, G G Zegrya, V I Ivanov-Omskii, K D Moiseev, M P Mikhailova, V A Smirnov, Yu P Yakovlev

chapter |4 pages

Self-assembled InAs islands on GaAs ( 1 ¯ 1 ¯ 1 ¯ ) Substrates

ByS.B. Schujman, S.R. Soss, K. Stokes, L.J. Schowalter