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Handbook of GaN Semiconductor Materials and Devices
DOI link for Handbook of GaN Semiconductor Materials and Devices
Handbook of GaN Semiconductor Materials and Devices book
Handbook of GaN Semiconductor Materials and Devices
DOI link for Handbook of GaN Semiconductor Materials and Devices
Handbook of GaN Semiconductor Materials and Devices book
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ABSTRACT
This book addresses material growth, device fabrication, device application, and commercialization of energy-efficient white light-emitting diodes (LEDs), laser diodes, and power electronics devices. It begins with an overview on basics of semiconductor materials, physics, growth and characterization techniques, followed by detailed discussion of advantages, drawbacks, design issues, processing, applications, and key challenges for state of the art GaN-based devices. It includes state of the art material synthesis techniques with an overview on growth technologies for emerging bulk or free standing GaN and AlN substrates and their applications in electronics, detection, sensing, optoelectronics and photonics.
Wengang (Wayne) Bi is Distinguished Chair Professor and Associate Dean in the College of Information and Electrical Engineering at Hebei University of Technology in Tianjin, China.
Hao-chung (Henry) Kuo is Distinguished Professor and Associate Director of the Photonics Center at National Chiao-Tung University, Hsin-Tsu, Taiwan, China.
Pei-Cheng Ku is an associate professor in the Department of Electrical Engineering & Computer Science at the University of Michigan, Ann Arbor, USA.
Bo Shen is the Cheung Kong Professor at Peking University in China.
TABLE OF CONTENTS
section I|139 pages
Fundamentals
chapter 1|50 pages
III-Nitride Materials and Characterization
chapter 2|33 pages
Microstructure and Polarization Properties of III-Nitride Semiconductors
section II|161 pages
Growth and Processing
chapter 5|25 pages
Growth Technology for GaN and AlN Bulk Substrates and Templates
chapter 7|41 pages
Molecular Beam Epitaxial Growth of III-Nitride Nanowire Heterostructures and Emerging Device Applications
section III|128 pages
Power Electronics
chapter 9|23 pages
Principles and Properties of Nitride-Based Electronic Devices
chapter 12|64 pages
Reliability in III-Nitride Devices
section IV|164 pages
Light Emitters
chapter 13|30 pages
Internal Quantum Efficiency for III-Nitride–Based Blue Light-Emitting Diodes
chapter 14|25 pages
White Light-Emitting Diode: Fundamentals, Current Status, and Future Trends
chapter 15|21 pages
Current Status and Trends for Green Light-Emitting Diodes
chapter 16|15 pages
Ultraviolet Light-Emitting Diodes: Challenges and Countermeasures
chapter 17|29 pages
InGaN/GaN Quantum Dot Visible Lasers
chapter 18|38 pages
GaN-Based Surface-Emitting Lasers
section V|74 pages
Emerging Applications