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      Microscopy of Semiconducting Materials 2001
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      Book

      Microscopy of Semiconducting Materials 2001

      DOI link for Microscopy of Semiconducting Materials 2001

      Microscopy of Semiconducting Materials 2001 book

      Proceedings of the Royal Microscopical Society Conference, Oxford University, 25–29 March 2001

      Microscopy of Semiconducting Materials 2001

      DOI link for Microscopy of Semiconducting Materials 2001

      Microscopy of Semiconducting Materials 2001 book

      Proceedings of the Royal Microscopical Society Conference, Oxford University, 25–29 March 2001
      Edited ByA G Cullis, J L Hutchison
      Edition 1st Edition
      First Published 2001
      eBook Published 22 December 2017
      Pub. Location Boca Raton
      Imprint CRC Press
      DOI https://doi.org/10.1201/9781351074629
      Pages 626
      eBook ISBN 9781351074629
      Subjects Engineering & Technology
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      Get Citation

      Cullis, A.G., & Hutchison, J.L. (Eds.). (2001). Microscopy of Semiconducting Materials 2001: Proceedings of the Royal Microscopical Society Conference, Oxford University, 25–29 March 2001 (1st ed.). CRC Press. https://doi.org/10.1201/9781351074629

      ABSTRACT

      The Institute of Physics Conference Series is a leading International medium for the rapid publication of proceedings of major conferences and symposia reviewing new developments in physics and related areas. Volumes in the series comprise original refereed papers and are regarded as standard referee works. As such, they are an essential part of major libration collections worldwide.

      The twelfth conference on the Microscopy of Semiconducting Materials (MSM) was held at the University of Oxford, 25-29 March 2001. MSM conferences focus on recent international advances in semiconductor studies carried out by all forms of microscopy. The event was organized with scientific sponsorship by the Royal Microscopical Society, The Electron Microscopy and Analysis Group of the Institute of Physics and the Materials Research Society. With the continual shrinking of electronic device dimensions and accompanying enhancement in device performance, the understanding of semiconductor microscopic properties at the nanoscale (and even at the atomic scale) is increasingly critical for further progress to be achieved. This conference proceedings provides an overview of the latest instrumentation, analysis techniques and state-of-the-art advances in semiconducting materials science for solid state physicists, chemists, and materials scientists.

      TABLE OF CONTENTS

      chapter |12 pages

      Analyzing interfaces and defects in semiconducting materials on the atomic scale

      ByN D Browning, I Arslan, E M James, P Moeck, T Topuria, Y Xin

      chapter |4 pages

      Structural and chemical characterization of GaSb/GaAs quantum dot structures by TEM

      ByH Kirmse, I Häusler, R Schneider, W Neumann, L Müller-Kirsch, D Bimberg

      chapter |4 pages

      Chemical profiles in AlGaN/GaN quantum wells: a CTEM, HRTEM and EFTEM comparison

      ByJ-L Rouvière, P Bayle-Guillemaud, G Radtke, S Groh, O Briot

      chapter |4 pages

      Contribution of EELS and quantitative dark field-imaging to the understanding of strain and chemistry in InGaAs quantum wires

      ByK Leifer, A Rudra, S Stauss, P A Buffat, P A Stadelmann, E Kapon

      chapter |4 pages

      Determination of indium composition fluctuations in InGaN/GaN quantum wells by quantitative high-resolution electron microscopy

      ByV Potin, E Hahn, A Rosenauer, D Gerthsen, J Off, F Scholz

      chapter |4 pages

      Mapping of 2-D dopant distribution using electron holography

      ByA C Twitchett, P A Midgley

      chapter |4 pages

      Compositional analysis based upon electron holography and a chemically sensitive reflection

      ByA Rosenauer, D Gerthsen, D Van Dyck, M Arzberger, G Böhm, G Abstreiter

      chapter |4 pages

      Quantitative 200 dark-field imaging of InGaAs/GaAs layers: measurement of chemical composition and strain effects

      ByJ Cagnon, P A Buffat, P A Stadelmann, K Leifer

      chapter |4 pages

      A new omega filter electron microscope at 300 kV

      ByY Bando, M Mitome, Y Kitami, K Kurashima, T Kaneyama, Y Okura, M Naruse

      chapter |4 pages

      Investigation of interfacial structures of oxides on GaAs substrates by HRTEM

      ByL J Chou, M H Hong

      chapter |4 pages

      Direct observation and characterisation of lattice defects in compound semiconductors

      ByG Ade

      chapter |4 pages

      HREM investigation of a Fe/GaN/Fe tunnel junction

      ByL Nistor, H Bender, J Van Landuyt, S Nemeth, H Boeve, J De Boeck, G Borghs

      chapter |4 pages

      Auto-correlation function analysis of structural transitions in electron-beam evaporated amorphous silicon thin films

      ByS L Cheng, K S Chi, L J Chen

      chapter |8 pages

      HREM and EDX studies of GaN as a guest material in the voids of synthetic opal

      ByV G Golubev, R E Dunin-Borkovski, J L Hutchison, D A Kurdyukov, A B Pevtsov, J Sloan, L M Sorokin

      chapter |4 pages

      High resolution electron microscopy analysis of Pt-nanoparticles embedded on crystalline TiO2

      ByJ Arbiol, A Ruiz, A Cirera, F Peiró, A Cornet, J R Morante, A Alimoussa, M-J Casanove

      chapter |4 pages

      Effects of in-situ and ex-situ reduction of Pd/SnO2 studied by HRTEM

      ByJ Arbiol, R Díaz, A Cirera, F Peiró, A Cornet, J R Morante, F Sanz, C Mira, J J Delgado, G Blanco, J J Calvino

      chapter |7 pages

      The morphology and composition of quantum dots

      ByD J H Cockayne, X Z Liao, J Zou

      chapter |4 pages

      How InGaAs islands form on GaAs substrates: the missing link in the explanation of the Stranski-Krastanow transition

      ByT Walther, A G Cullis, D J Norris, M Hopkinson

      chapter |4 pages

      The structure of uncapped and capped InAs/GaAs quantum dots

      ByD Zhi, D W Pashley, B A Joyce, T S Jones

      chapter |4 pages

      QHREM study of thermal stability of stacked self-assembled InP quantum dots

      ByN Y Jin-Phillipp, M K Zundel, K Du, F Phillipp, K Eberl

      chapter |4 pages

      Atomistic modelling of strain relaxation effects in quantum dots

      ByM A Migliorato, A G Cullis, M Fearn, J H Jefferson

      chapter |8 pages

      Mechanisms of interdiffusion and thermal stability upon annealing of AlAs/GaAs:Be quantum wells grown under low temperature conditions

      ByK Tillmann, M Luysberg, A Fattah, P Specht, ER Weber

      chapter |4 pages

      Structural properties of InGaAs-based strain balanced MQW for photovoltaic applications

      ByL Lazzarini, L Nasi, C Ferrari, M Mazzer, A Passaseo, K W J Barnham

      chapter |6 pages

      Localisation and transport in quantum wires with longitudinal bandgap variation

      ByK Leifer, B Dwir, Y Ducommun, D Y Oberli, E Kapon

      chapter |4 pages

      SEM studies of composite fullerence-based thin films doped by CdSe, CdTe- semiconductors

      ByA V Nashchekin, M E Gaevski, S G Konnikov, S O Kognovitskii, I P Soshnikov, M V Zamoryanskaya

      chapter |4 pages

      Composition-variations and phase-segregation in InGaAsN grown by CBE

      ByS Thomas, T J Bullough, T B Joyce, J-G Zheng, P R Chalker

      chapter |6 pages

      Critical dimensions for the formation of misfit dislocations in In0.6Ga0.4As islands on GaAs(001)

      ByK Tillmann, A Förster, L Houben

      chapter |4 pages

      Barrier thickness influence on plastic relaxation in (111)B misoriented InGaAs/GaAs double quantum wells

      ByM Herrera, M Gutiérrez, D González, G Aragón, M Hopkinson, R García

      chapter |4 pages

      Strain relaxation behaviour in InxGa1-xAs quantum wells on misorientated GaAs (111)B substrates

      ByM Gutiérrez, D González, G Aragón, M Hopkinson, T Fleischmann, R García

      chapter |4 pages

      Characterization of In0.3Ga0.7As(N) quantum wells in (001) GaAs using TEM

      ByH Meidia, A G Cullis, J S Roberts

      chapter |4 pages

      Structural evolution of carbon nanotubes grown on Fe-deposited Si substrates by thermal chemical vapour deposition

      ByC-J Choi, J I Sohn, S Lee, T-Y Seong

      chapter |4 pages

      Evolution of self-organised nanometric Fe islands over MgO buffered (001)GaAs substrates

      ByF Peiró, A Cornet, J L Menéndez, A Cebollada, G Armelles

      chapter |10 pages

      In situ REM studies of a Si(111) stepped surface during gold adsorption and oxygen treatments

      ByA V Latyshev, D A Nasimov, V N Savenko, S S Kosolobov, A L Aseev

      chapter |4 pages

      Investigation of the early stages of Si-overgrowth of Ge-dots on Si(001)

      ByE Müller, O Kirfel, A Rastelli, H von Känel, D Grützmacher

      chapter |10 pages

      Ge-Si Nanostructures for Quantum-Effect Electronic Devices

      ByF Ernst, O Kienzle, O G Schmidt, K Eberl, J Zhu, K Brunner, G Abstreiter

      chapter |4 pages

      Island growth from a surface instability in the GeSi system

      ByF M Ross, R M Tromp, J Tersoff, M C Reuter

      chapter |4 pages

      Relaxation of Si1-xGex buffer layers on Si(100) through helium ion implantation

      ByM Luysberg, D Kirch, H Trinkaus, B Holländer, St Lenk, S Mantl, H-J Herzog, T Hackbarth, P F P Fichtner

      chapter |4 pages

      Energy filtered TEM analyses of Ge snowploughing during oxidation of SiGe/Si MOSFET device structures

      ByD J Norris, A G Cullis, G Braithwaite, T J Grasby, T E Whall, E H C Parker

      chapter |4 pages

      Characterisation of 3C-SiC crystallites grown on Si (001) by CO annealing

      ByO H Krafcsik, G Z Radnóczi, L Tóth, B Pècz, P Deàk

      chapter |4 pages

      Large angle twist-bonded compliant substrates for the epitaxy of lattice mismatched III-V semiconductors

      ByG Patriarche, E Le Bourhis

      chapter |4 pages

      Microstructures of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy

      ByY-W Ok, T-Y Seong, K Uesugi, I Suemune

      chapter |4 pages

      TEM structural study of GaInP layers grown by solid source molecular beam epitaxy

      ByY-W Ok, J D Song, J M Kim, Y T Lee, T-Y Seong

      chapter |6 pages

      Interdiffusion in GaSb/AlxGa1-xSb heterostructures

      ByB Jahnen, M Luysberg, K Urban, H Bracht, R Schmidt, C Ungermanns, T Bleuel

      chapter |4 pages

      Structure and composition of (GaMn)As formed by MOVPE

      ByK Volz, M Lampalzer, A Schaper, J Zweck, W Stolz

      chapter |4 pages

      Spatial analysis of dislocation distribution as a means of assessing crystal growth processes

      ByE M Walker, D J Buckley, N M Boyall, K Durose, K Grasza, A Szczerbakow, W Palosz

      chapter |6 pages

      Defect dynamics in ZnSe/GaAs (001) epilayers: TEM in-situ heating experiments

      ByS Lavagne, C Levade, G Vanderschaeve

      chapter |4 pages

      Microstructure of textured ZnS thin films produced by electrostatic spray assisted vapour deposition

      ByM Wei, K L Choy

      chapter |4 pages

      Structural and chemical studies of novel 1-eV band gap solar cell materials lattice-matched to GaAs

      ByA G Norman, D J Friedman, J F Geisz, M M Al-Jassim, Sarah Kurtz

      chapter |4 pages

      A comparison of chemical bath deposition and spray pyrolysed Cd-free buffer layers in CuInS2 solar cells by TEM cross-section analysis

      ByS E Gledhill, C Kaufmann, J L Hutchison, R M Langford, J Klaer, R Klenk, P J Dobson

      chapter |4 pages

      The dynamic bifurcation of kinks

      ByM E Polyakov

      chapter |10 pages

      Studies of defects, internal electric fields and micro-cathodoluminescence in GaN

      ByD Cherns

      chapter |4 pages

      Depth resolved cathodoluminescence study of optical transitions in MOVPE grown hexagonal GaN

      ByG Salviati, F Rossi, N Armani, L Lazzarini, L Nasi, V Grillo, A Passaseo, R Cingolani, M Longo, O Martinez

      chapter |4 pages

      Localised near-band gap studies in nitrides via EELS

      ByA Gutiérrez-Sosa, U Bangert, A J Harvey, W R Flavell, K Jacobs, I Moermann, A Rizzi

      chapter |4 pages

      Energy-loss spectroscopy of GaN alloys and quantum wells

      ByV J Keast, N Sharma, C J Humphreys

      chapter |4 pages

      Chemical mapping of InGaN/GaN LEDs

      ByNikhil Sharma, Menno Kappers, Jonathan Barnard, Mary Vickers, Colin Humphreys

      chapter |6 pages

      Correlating compositional, structural and optical properties of InGaN quantum wells by transmission electron microscopy

      ByM Albrecht, V Grillo, J Borysiuk, T Remmele, H P Strunk, T Walther, W Mader, P Prystawko, M Leszczynski, I Grzegory, S Porowski

      chapter |4 pages

      Composition of InGaN: In distribution and influence of lattice strain

      ByM Schowalter, P Pfundstein, E Hahn, B Neubauer, A Rosenauer, D Gerthsen, A Allam, B Schineller, O Schön, M Heuken

      chapter |4 pages

      Interface structure and epitaxial growth of M-plane GaN(11̅00) on tetragonal LiA1O2(100) substrates

      ByA Trampert, T Liu, P Waitereit, O Brandt, K H Ploog

      chapter |4 pages

      Structural evolution of GaN nucleation layers during metal-organic chemical vapour deposition growth

      ByF Degave, P Ruterana, G Nouet, J H Je, C C Kim

      chapter |4 pages

      Structural study of the influence of different growth parameters on the quality of InxGa1-xN/GaN films grown by MOCVD

      ByE Piscopiello, M Catalano, M Vittori Antisari, A Passaseo, R Cingolani, M Berti, A V Drigo

      chapter |4 pages

      Cracks in AlGaN epilayers on GaN buffers

      ByR T Murray, P J Parbrook, D A Wood, G Hill

      chapter |4 pages

      GaN layers grown directly onto GaAs by molecular beam epitaxy

      ByB Pécz, L Tóth, Zs Czigány, K Amimer, A Georgakilas

      chapter |6 pages

      Investigation of microstructural evolution during the growth of epitaxial GaN by correlated in situ optical monitoring, TEM and AFM techniques

      ByM Lada, A G Cullis, P J Parbrook, D A Wood, D J Norris, G Duggan

      chapter |4 pages

      Multifractal analysis of GaN epilayer surface structure

      ByN M Shmidt, A G Kolmakov, A S Kryzhanovsky, V V Ratnikov, A N Titkov

      chapter |4 pages

      On the effect of high Mg doping on the polarity of GaN

      ByP Vennéguès, M Benaissa, B Beaumont, B Damilano, N Grandjean

      chapter |8 pages

      Determining the crystal polarity of compound semiconductors from bend contours

      ByE Spiecker, C Jäger, W Jäger

      chapter |4 pages

      Investigation of threading dislocation atomic configurations in GaN by HRTEM, geometrical phase analysis and atomistic modelling

      ByS Kret, J Chen, P Ruterana, G Nouet

      chapter |4 pages

      Core structure of dislocations in GaN revealed by transmission electron microscopy

      ByT Remmele, M Albrecht, H P Strunk, A T Blumenau, M I Heggie, J Elsner, T Frauenheim, H P D Schenk, P Gibart

      chapter |6 pages

      The generation of misfit dislocations in AlGaN/GaN films

      ByC G Jiao, D Cherns

      chapter |4 pages

      Multiple atomic configurations of inversion domain boundaries in GaN grown on (111)Si

      ByA M Sánchez, F J Pacheco, S I Molina, R García, P Ruterana, G Nouet

      chapter |4 pages

      Defect observations in GaN MQW structures

      ByJ P O’Neill, A G Cullis, P J Parbrook, D A Wood

      chapter |4 pages

      Variations in the degree of order of GaN epilayer mosaic structure after Si doping

      ByN M Shmidt, A G Kolmakov, M S Dunaevsky, V V Emtsev, A S Kryzhanovsky, W V Lundin, D S Poloskin, V V Ratnikov, A N Titkov, A S Usikov, E E Zavarin

      chapter |4 pages

      TEM assessment of GaN/AlGaN/TiAlTiAu ohmic contacts

      ByM W Fay, I Harrison, J C Birbeck, B T Hughes, M J Uren, T Martin, P D Brown

      chapter |8 pages

      TEM studies of ion implantation damage in ULSI technology

      ByKevin S Jones, Mark E Law, Richard Brindos, Patrick Keys

      chapter |6 pages

      Profiling of low energy implanted As distributions in Si by using HAADF and EDX techniques in the transmission electron microscope

      ByT-S Wang, A G Cullis, E J H Collart, A J Murrell, M A Foad

      chapter |4 pages

      Location of Ge implanted in hexagonal SiC

      ByU Kaiser, K Saitoh, K Tsuda, M Tanaka

      chapter |4 pages

      Synthesis of epitaxial diamond grains in cubic SiC by high temperature carbon implantation

      ByB Pécz, L Tóth, V Heera, W Skorupa

      chapter |4 pages

      TEM and SIMS study of the behaviour of fluorine in as-deposited amorphous and polysilicon annealed at 600 to 950°C

      ByC D Marsh, G R Nash, J F W Schiz, G R Booker, P Ashburn

      chapter |8 pages

      Structure and behavior of void defects in Czochralski silicon

      ByM Itsumi

      chapter |4 pages

      Stability of twist interfacial dislocations in (001) silicon bonded films

      ByK Rousseau, J L Rouvuére, F Fournel, N Magnea, H Moriceau

      chapter |4 pages

      Evaluation and quantification by electron back-scattering diffraction of the microstructure of laser-crystallized silicon thin films

      ByS Christiansen, M Nerding, G Esser, U Urmoneit, A Otto, H P Strunk

      chapter |4 pages

      Investigation of impurity enrichment and electronic properties of microcrystalline silicon thin films

      ByM Stöger, A Breymesser, P Schattschneider, V Schlosser

      chapter |4 pages

      Formation process of silicon surface nanoholes

      ByY Ohno, S Takeda

      chapter |4 pages

      Investigation of the defect structures in CZ silicon crystals annealed in either oxygen or nitrogen atmosphere

      ByC Frigeri, M Ma, T Irisawa, T Ogawa

      chapter |4 pages

      An EDX/EELS investigation of an oxygen barrier for integrated ferroelectric devices

      ByA Rucki, N Nagel, I Kasko

      chapter |4 pages

      Characterisation of ALCVD ZrO2 thin films by TEM

      ByO Richard, H Bender, M Houssa, C Zhao

      chapter |4 pages

      TEM investigations of epitaxial praseodymium oxide on silicon

      ByE Bugiel, J P Liu, H J Osten

      chapter |4 pages

      EFTEM study of plasma etched low-k Si-O-C dielectrics

      ByS Hens, H Bender, R A Donaton, K Maex, S Vanhaelemeersch, J Van Landuyt

      chapter |4 pages

      Substrate and annealing dependent crystallization of Si/Si02 superlattice structures

      ByS Karirinne, J Keränen, T Lepistö, J Sinkkonen

      chapter |4 pages

      SiC-SiO2 materials grown by reactive magnetron sputtering

      ByX Portier, F Gourbilleau

      chapter |4 pages

      Influence of the specimen surfaces on TEM images of reverse-biased p-n junctions

      ByM Beleggia, G C Cardinali, P F Fazzini, P G Merli, G Pozzi

      chapter |4 pages

      SEM doping contrast at a Si pn junction

      ByS L Elliott, R F Broom, C J Humphreys

      chapter |4 pages

      Very low energy electron microscopy of doped semiconductors

      ByM M El-Gomati, T C R Wells, H Jayakody

      chapter |4 pages

      TEM study of diffused n+/p junctions produced by KrF excimer laser thermal annealing

      ByC-J Choi, M-G Han, S Lee, T-Y Seong

      chapter |6 pages

      High resolution transmission electron microscope investigation of solid state amorphization in metal-Si systems

      ByL J Chen, S L Cheng

      chapter |4 pages

      Interfacial reactions of Ti/Cu/(100)Si

      ByM H Yeh, W T Lin

      chapter |4 pages

      Evolution of vacancy ordering in epitaxial YbSi2-x thin films on (111)Si

      ByK S Chi, L J Chen

      chapter |6 pages

      Epitaxially stabilized structures of ultrathin iridium silicide

      ByU Hörmann, T Remmele, H P Strunk, H Grünleitner, M Schulz

      chapter |4 pages

      Intimate morphology of Au-nGaN contacts for the configuration of near ideal Schottky diodes

      ByF Peiró, A Cornet, T G G Maffeis, M C Simmonds, S A Clark

      chapter |6 pages

      Strain analysis in sub-micron silicon devices by TEM/CBED

      ByA Armigliato, R Balboni, S Frabboni, A Benedetti, A G Cullis, G Pavia

      chapter |4 pages

      Nanoscale characterization of stresses in semiconductor devices

      ByJ Demarest, R Hull, K T Schonenberg, K G F Janssens

      chapter |4 pages

      Dynamical multibeam simulation for (LA)CBED investigations of imperfect silicon

      ByA Kenda, H Cerva, P Pongratz

      chapter |4 pages

      Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation

      ByC Stuer, A Steegen, J Van Landuyt, H Bender, K Maex

      chapter |4 pages

      Application of the deconvolution of AFM profiles to the Etch/AFM method for measuring 2-D dopant concentrations in sub-100nm deep junction n+/p silicon MOSFETs

      ByK D Yoo, G R Booker

      chapter |4 pages

      TEM investigations of oxidation phenomena in (Al,Ga)As/AlAs

      ByR Schneider, A Klein, M Zorn, M Weyers, W Neumann

      chapter |4 pages

      Electron microscopy study of vertical cavity surface emitting lasers

      ByJ Kątcki, J Ratajczak, F Phillipp, M Bugajski, J Muszalski

      chapter |6 pages

      TEM analysis of strained MQW laser diodes

      ByT Matsuda, S Seo, K Mitose, T Saito, S Hattori, F Iwase, Y Murakami, D Shindo

      chapter |4 pages

      Characterization of GaN based MESFETs by comparing electroluminescence, photoionization and cathodoluminescence spectroscopy

      ByN Armani, A Chini, M Manfredi, G Meneghesso, M Pavesi, V Grillo, G Salviati, E Zanoni

      chapter |4 pages

      Rapid thermal sulphurisation of Cu-rich and Cu-poor Cu-In precursors for the production of CuInS2 layers for photovoltaic applications: a microstructural study

      ByB Barcones, A Romano-Rodríguez, J Álvarez-Garcia, L Calvo-Barrio, A Pérez-Rodríguez, J R Morante, R Scheer, R Klenk, I Luck, K Siemer, O Van der Biest

      chapter |4 pages

      Broad ion beam milling of focused ion beam prepared transmission electron microscopy cross-section specimens for high resolution electron microscopy using silicon support membranes

      ByR M Langford, D Ozkaya, B Huey, A K Petford-Long

      chapter |4 pages

      The structure of damage layers in transmission electron microscope specimens in elemental and compound semiconductors after FIB fabrication

      ByP R Munroe, S Rubanov

      chapter |4 pages

      Quantitative ultra shallow dopant profile measurement by scanning capacitance microscopy

      ByYoshio Kikuchi, Tomohiro Kubo, Masataka Kase

      chapter |4 pages

      Scanning capacitance microscopy as an in-line evaluation tool for dry etching of semiconductors: a case study with InP

      ByS Anand, O Douhéret, C F Carlström

      chapter |4 pages

      Elastic mapping of sub-surface defects by ultrasonic force microscopy: limits of depth sensitivity

      ByH Geisler, M Hoehn, M Rambach, M A Meyer, E Zschech, M Mertig, A Romanov, M Bobeth, W Pompe, R E Geer

      chapter |4 pages

      Characterisation of the nanometer-scale mechanical compliance of semiconductors by Ultrasonic Force Microscopy

      ByBryan D Huey, Richard M Langford, G Andrew, D Briggs, Oleg V Kolosov

      chapter |4 pages

      Characterization of GaAs/AlGaAs buried-heterostructure lasers by scanning capacitance microscopy

      ByO Douhéret, S Anand, C Angulo Barrios, S Lourdudoss

      chapter |4 pages

      Heteroepitaxial growth of InN islands on GaN(0001) and Si(111): a combined STM / AFM study

      ByC Nörenberg, M G Martin, R A Oliver, M R Castell, G A D Briggs

      chapter |4 pages

      AFM characterization of AlGaAs/AlAs distributed Bragg reflectors

      ByA Klein, M Zorn, U Zeimer, R Schneider, A Oster, M Weyers

      chapter |10 pages

      Cathodoluminescence for studies of low dimensional semiconductor structures

      ByA Gustafsson

      chapter |4 pages

      Investigating inter-well dopant concentration variations in doped MQWs with 20nm spatial resolution using SEM-CL

      ByCarl E Norman

      chapter |6 pages

      Radiative 1D exciton recombination at B(g)-type dislocations in ZnSe and CdTe

      ByJ Schreiber, U Hilpert, L Höring, L Worschech, M Ramsteiner

      chapter |4 pages

      Comparative cathodoluminescence and EBIC analysis of partially relaxed InGaAs/GaAs p-i-n structures

      ByS Tundo, M Mazzer, L Nasia, G Salviati, L Lazzarini, C Ferrari, A Passaseo, N J Ekins-Daukes, K W J Barnham

      chapter |4 pages

      Electron beam dissipation volume effects on lateral and depth probing of semiconducting layers

      ByE Napchan

      chapter |4 pages

      REBIC Studies of Grain Boundaries in Ce1-xGdxO2-x/2-δ

      ByD B Holt, R Rudkin, B C H Steele

      chapter |4 pages

      A method for the characterisation of varistor quality using the SEM-REBIC technique

      ByA G Wojcik, L E Mason

      chapter |4 pages

      Crystallographic and chemical control of the SEM-EBIC contrast at zinc oxide based varistor grain boundaries

      ByC Leach

      chapter |4 pages

      Applications of high resolution microcalorimeter type X-ray spectrometers for low voltage SEM applications in material analysis

      ByDel Redfern, Joe Nicolosi, Uwe Hess, Jens Höhne

      chapter |6 pages

      Optical response of semiconductor nanostructure with free charge carriers in scanning near-field optical microscope

      ByA B Evlyukhin, R M Bantser, S G Lyovkin, N N Parphenova, E V Evlyukhina
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