Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe

chapter 1|26 pages

Defects in Ultra-Shallow Junctions

ByMark E. Law, Renata Camillo-Castillo, Lance Robertson, Kevin S. Jones

chapter 2|30 pages

Hydrogen-Related Defects in Silicon, Germanium, and Silicon–Germanium Alloys

ByA.R. Peaker, V.P. Markevich, and L. Dobaczewski

chapter 3|14 pages

Defects in Strained-Si MOSFETs

ByYongke Sun, Scott E. Thompson

chapter 5|44 pages

Electrical Characterization of Defects in Gate Dielectrics

ByDieter K. Schroder

chapter 6|52 pages

Dominating Defects in the MOS System: Pb and E0 Centers

ByPatrick M. Lenahan

chapter 7|44 pages

Oxide Traps, Border Traps, and Interface Traps in SiO2

ByDaniel M. Fleetwood, Sokrates T. Pantelides, Ronald D. Schrimpf

chapter 8|24 pages

From 3D Imaging of Atoms to Macroscopic Device Properties

ByS.J. Pennycook, M.F. Chisholm, K. van Benthem, A.G. Marinopoulos, and Sokrates T. Pantelides

chapter 9|22 pages

Defect Energy Levels in HfO2 and Related High-K Gate Oxides

ByJ. Robertson, K. Xiong, K. Tse

chapter 11|18 pages

Defects in CMOS Gate Dielectrics

ByEric Garfunkel, Jacob Gavartin, Gennadi Bersuker

chapter 13|18 pages

Defect Formation and Annihilation in Electronic Devices and the Role of Hydrogen

ByLeonidas Tsetseris, Daniel M. Fleetwood, Ronald D. Schrimpf, Sokrates T. Pantelides

chapter 14|38 pages

Toward Engineering Modeling of Negative Bias Temperature Instability

ByTibor Grasser, Wolfgang Goes, Ben Kaczer

chapter 15|28 pages

Wear-Out and Time-Dependent Dielectric Breakdown in Silicon Oxides

ByJohn S. Suehle

chapter 16|32 pages

Defects Associated with Dielectric Breakdown in SiO2-Based Gate Dielectrics

ByJordi Suñé, Ernest Y. Wu

chapter 17|36 pages

Defects in Thin and Ultrathin Silicon Dioxides

ByGiorgio Cellere, Simone Gerardin, Alessandro Paccagnella

chapter 18|18 pages

Structural Defects in SiO2–Si Caused by Ion Bombardment

ByAntoine D. Touboul, Aminata Carvalho, Mathias Marinoni, Frederic Saigne, Jacques Bonnet, Jean Gasiot

chapter 19|24 pages

Impact of Radiation-Induced Defects on Bipolar Device Operation

ByRonald D. Schrimpf, Daniel M. Fleetwood, Ronald L. Pease, Leonidas Tsetseris, Sokrates T. Pantelides

chapter 20|40 pages

Silicon Dioxide–Silicon Carbide Interfaces: Current Status and Recent Advances

ByS. Dhar, Sokrates T. Pantelides, J.R. Williams, and L.C. Feldman

chapter 21|56 pages

Defects in SiC

ByE. Janzén, A. Gali, A. Henry, I.G. Ivanov, B. Magnusson, and N.T. Son

chapter 22|14 pages

Defects in Gallium Arsenide

ByJ.C. Bourgoin and H.J. von Bardeleben