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# Compound Semiconductors 2001

DOI link for Compound Semiconductors 2001

Compound Semiconductors 2001 book

# Compound Semiconductors 2001

DOI link for Compound Semiconductors 2001

Compound Semiconductors 2001 book

Edited ByY Arakawa, Y. Hirayama, K Kishino, H Yamaguchi

Edition 1st Edition

First Published 2002

eBook Published 21 April 2014

Pub. Location Boca Raton

Imprint CRC Press

Pages 855

eBook ISBN 9780429181191

Subjects Engineering & Technology, Physical Sciences

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#### Get Citation

Arakawa, Y., Hirayama, Y., Kishino, K., & Yamaguchi, H. (Eds.). (2002). Compound Semiconductors 2001 (1st ed.). CRC Press. https://doi.org/10.1201/9781482268980

## ABSTRACT

An international perspective on recent research, Compound Semiconductors 2001 provides an overview of important developments in III-V compound semiconductors, such as GaAs, InP, and GaN; II-VI compounds, such as ZnSe and CdTe; and IV-IV compounds, such as SiC and SiGe. The book contains 139 papers arranged in chapters on electronic devices, optical

## TABLE OF CONTENTS

chapter |10 pages

#### High speed InP-based heterojunction bipolar transistors S Long and A Gossard 2

ByV Kaper

chapter |6 pages

#### High performance recessed gate AlGaN/GaN HEMTs

ByJ S Moon, W-S Wong, M Micovic, M Hu, J Duvall, M Antcliffe, T Hussain, P Hashimoto and L McCray

chapter |6 pages

#### Npn InGaN/GaN Double Heterojunction Bipolar Transistors with High Common-emitter Current Gains

ByT Makimoto, K Kumakura, N Kobayashi

chapter |6 pages

#### Device Technology for High-Yield and High-Performance InP/InGaAs DHBTs

ByK Kurishima, M Ida, N Watanabe, T Enoki

chapter |6 pages

#### A novel resonant tunneling logic gate capable of 100 fs/gate class operation

ByK Maezawa, T Tanaka, T Mizutani

chapter |6 pages

#### High peak current density and low peak voltage strained Ino.9-o.8Gao.1-o.2As/AlAs RTD grown by

Metal Organic Chemical Vapor Deposition

ByH Matsuzaki, J Osaka, H Sugiyama, T Kobayashi, T Enoki

chapter |6 pages

#### DC, RF and stability properties of high current density InGaAs tunnel diodes J Lewis and H Goronkin

ByM R Deshpande, S Ageno, V Nair, N El-Zein, G Kramer, M Kyler, S Allen, O Kuboi

chapter |6 pages

#### On the electrical characteristics of high energy carbon irradiated Au/n-GaAs Schottky Barrier Diodes

ByP Jayavel, K Santhakumar, M Ogura

chapter |6 pages

#### Attractive Potential Around a Buried Metallic Gate in a Schottky Collector Hot Electron Transistor

ByL-E Wernersson, R Yamamoto, Y Miyamoto, E Lind, I Pietzonka, W Seifert, L Samuelson and K Furuya

chapter 0|6 pages

#### .12μιη gate length Ino.52Alo.48As/Ino.53Gao.47As HEMTs on transferred substrate

ByJ Mateos

chapter 2|6 pages

#### Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors with high A1 compositions

ByN Maeda, K Tsubaki, T Saitoh, N Kobayashi

chapter |6 pages

#### Low-frequency noise characteristics of AlGaN/GaN HEMT

ByH Makihara, M Akita, Y Ohno, S Kishimoto, K Maezawa, T Mizutani

chapter |6 pages

#### Electroluminescence in AlGaN/GaN HEMTs

ByY Ohno, T Nakao, M Akita, S Kishimoto, K Maezawa, T Mizutani

chapter |6 pages

#### Depletion and Accumulation Mode Operation of GaAs MISFETs with nm-Thin Gate Insulating Layers Formed by UV & Ozone process

ByY Kita, Y Ohta, N C Paul, K Iiyama, S Takamiya

chapter |6 pages

#### Low-noise quantum well infrared photodetectors for high-resolution thermal imaging

ByH Schneider, M Walther, J Fleissner, R Rehm, E Diwo, K Schwarz, P Koidl, G Weimann, J Ziegler, R Breiter, W Cabanski

chapter 1|6 pages

#### 4 μιη GalnNAs/GaAs Quantum Well Laser Grown by Chemical Beam Epitaxy

ByY lkenaga, T Miyamoto, S Makino, T Kageyama, M Aral, F Koyama and K Iga

chapter |6 pages

#### Room Temperature Self-Excited Electronic Raman Scattering by Intersubband Transitions in Compressively Strained InGaAs Quantum-Well Lasers

ByW Susaki, H Yaku, X Gao, K Nishikawa

chapter |6 pages

#### Characteristics of AlGaN Quantum Well Light Emitting Diodes under Large Current Operation

ByT Nishida, N Kobayashi

chapter |24 pages

#### Orange GalnN/GaN Multi-Quantum-Well Light-Emitting Diodes using a Post-Annealing Technique

ByH Ishikawa, T Egawa, T Jimbo

chapter |8 pages

#### Tunneling-induced spin injection in Fe/GaAs and MnAs/GaAs heterostructures

ByK H Ploog, M Ramsteiner, H-P Schonherr and H J Zhu

chapter |6 pages

#### Structural and magnetic properties of ferromagnetic MnAs films on GaAs (001)

ByL Daweritz, F Schippan, M Kastner, B Jenichen, V M Kaganer, K H Ploog, B Dennis

chapter |6 pages

#### Vertical and lateral heterogeneous integration using direct wafer bonding

ByJ Geske, V Jayaraman, Y L Okuno, J E Bowers

chapter |18 pages

#### Phase stability of CdO on zincblende layers grown on GaAs substrates by metalorganic molecular-beam epitaxy

ByABMA Ashrafi, I Suemune, H Kumano, Y W Ok and T-Y Seong

chapter |6 pages

#### Selective MBE Growth of GaAs/AlGaAs Nanowires on Patterned GaAs (001) Substrates and Its Application to Hexagonal Nanowire Network Formation

ByT Sato, I Tamai, C Jiang, H Hasegawa

chapter |4 pages

#### A novel surface patterning using FIB and in-situ etching

ByV Asaoka, T Arai, N Sano, T Kaneko

chapter |16 pages

#### Novel fabrication method of semiconductor nano-electromechanical structures using controlled surface step distribution

ByH Yamaguchi, Y Hirayama

chapter |6 pages

#### Magneto-transport properties of electrons in quantum wells with quasi-periodic interface corrugation

ByT Noda, H Sakaki

chapter |6 pages

#### Numerically evaluated exact properties of the conductance of regular and chaotic quantum cavities

ByY Takagaki, K H Ploog

chapter |12 pages

#### A proposal to estimate homogeneous and inhomogeneous energy level broadening in double barrier resonant tunneling diodes

ByM Suhara, S Ooki, L-E Wernersson, W Seifert, L Samuelson and T Okumura

chapter |6 pages

#### Scattering processes of 2D electrons by charged quantum dots in n-AlGaAs/GaAs heterojunction channels with lOnm-scale embedded InGaAs islands

ByT Kawazu, T Noda, H Sakaki

chapter |6 pages

#### Negative differential conductance of Ino.4Gao.6As/GaAs(311)B laterally coupled quantum dots

ByH-Z Song, Y Okada, K Akahane, H Z Xu and M Kawabe

chapter |6 pages

#### Time-resolved THz spectroscopy of miniband transport in biased GaAs/AlGaAs superlattices

ByY Shimada, K Hirakawa

chapter |6 pages

#### Ultrafast and Large Nonlinear Optical Response due to Spatial Structure of Internal Electric Field in Semiconductor Thin Film

ByT Isu, K Akiyama, N Tomita, T Nishimura, Y Nomura, H Ishihara, K Cho

chapter |6 pages

#### Effect of iodine doping on photoluminescence properties of ZnTe grown by metalorganic vapor phase epitaxy

ByT Tanaka, K Hayashida, M Nishio, S Wang, Y Chang, Q Guo, H Ogawa

chapter |6 pages

#### Femto-second pump-probe study of the nonlinear transmission in an asymmetric triple quantum well structure

ByK Mizutani, M Yamaguchi, N Sawaki

chapter |6 pages

#### Ionic screening effects on resonant light scattering by intersubband excitations in n- type AlGaAs/GaAs heterojunctions

ByS M Maung, S Katayama, M Koyano, S Yamada

chapter |6 pages

#### Determination of the critical layer thickness of GaAs/InGaAs strained quantum wells by scanning near-field optical spectroscopy

ByY Ohizumi, T Tsuruoka, S Ushioda

chapter |6 pages

#### Persistent Photoconductivity under Atmospheric Pressure in Uniformly Doped «-GaAs Prepared by Intermittent Injection of TMG and AsH3

ByY Oyama, F Matsumoto, H Watanabe, K Suto, J Nishizawa

chapter |12 pages

#### Self-Consistent Computer Analysis of Cathodoluminescence In-depth Spectra for Compound Semiconductor Heterostructures

ByF Ishikawa, H Hasegawa

chapter |6 pages

#### Optical studies of surface quantum well structures with intermediate-layer thicknesses

ByM Sakai, J Hagino, H Tsuruta

chapter |20 pages

#### Single Optical Mode Coupling of Single Quantum Dot Spontaneous Emission

ByG S Solomon, M Pelton, Y Yamamoto

chapter |6 pages

#### Biexciton formation in CdTe/Cdo.74Mgo.26Te quantum wires

ByS Nagahara, T Kita, O Wada, L Marsal, H Mariette

chapter |18 pages

#### Stranski-Krastanov Growth of (In,Ga)As Quantum Dots by Controlling the Wetting Layer

ByT Kita, M Nakahama, K Yamashita, O Wada

chapter |6 pages

#### Carrier dynamics in spatially ordered InAs quantum dots and Y H Zhang

ByS Marcinkevicius, J Siegert, R Leon, S Chaparro, S R Johnson, C Navarro, X Jin

chapter |16 pages

#### Quantum-confined Stark effect in InGaN pyramidal dots induced by the piezoelectric field

ByT Saito, Y Arakawa

chapter |6 pages

#### Formation mechanism of ZnSe nanocrystals emitting whitish blue in water

ByN Murase, M Gao, T Yazawa, J Feldmann

chapter |6 pages

#### Strong band-edge emission from surface modified CdS quantum dots prepared by a colloidal method

ByD Kim, N Teratani, K Mizoguchi, M Nakayama

chapter |10 pages

#### UV photoluminescence spectrum of GaN self-assembled quantum dots grown by MOCVD

ByM Miyamura, K Tachibana, Y Arakawa

chapter |12 pages

#### Elastic Properties and Pressure-induced Phase Transitions of BNs

ByH Fujita, K Shirai, Η K Yoshida

chapter |6 pages

#### Effect of annealing on the optical parameters in pulsed laser deposited vanadium pentoxide thin films

ByR T Rajendra Kumar, B Karunagaran, D Mangalaraj, Sa K Narayandass, P Manoravi, M Joseph

chapter |6 pages

#### Molecular Orbital Study of Electronic States by Discrete Variational Xa method: Influences of Chalcogen Atoms

ByY Yamamura, S Miyamura, T Inokuma, K Iiyama, S Takamiya

chapter |6 pages

#### Self-limiting Growth of InP by Intermittent Injection of TMIn/TEIn and TBP in Ultra High Vacuum and its in-situ monitoring by Reflectance Anisotropy Spectroscopy (RAS)

ByY Oyama, N Otsuka, T Sato, K Suto, J Nishizawa

chapter |6 pages

#### Real-time observation of step-flow limited metal organic vapor phase epitaxial growth of InP and their characteristics

ByS Bhunia, T Kawamura, Y Watanabe, S Fujikawa, K Uchida, S Nozaki, H Morisaki, J Matsui, Y Kagoshima, Y Tsusaka

chapter |6 pages

#### Silicon Carbide Delta-Doped Structures Formed by “Pulse Doping” Technique in the Vertical Hot Wall Type CVD System

ByK Takahashi, T Yokogawa, M Uchida, O Kusumoto, K Yamashita, R Miyanaga, M Kitabatake

chapter |6 pages

#### Phosphorus and Arsenic P-Type Doping of Bulk ZnTe for LED Application

ByS L Wang, Y Chang, T Tanaka, M Nishio, Q X Guo, K Hayashida, H Ogawa

chapter |6 pages

#### Roles of the ZnO buffer layer to the properties of ZnO on Si substrates grown by metalorganic vapor phase epitaxy

ByS-W Kim, K Ogata, K Maejima, S Fujita and S Fujita

chapter |4 pages

#### Wide Wavelength Control of Highly Strained GalnAs/GaAs QWs on Patterned Substrate for Multiwavelength VCSEL Array

ByM Arai, TKondo, N Nishiyama, M Azuchi, T Miyamoto, F Koyama and K Iga

chapter |6 pages

#### Pseudo-three-dimensional photoelastic characterization of LEC-GaAs single crystal ingot

ByM Yamada, T Chu

chapter |6 pages

#### Optimization of GaAs/Si Heteroepitaxy for Solar Cell Application

ByJ Takamori, Y Shimizu, T Ueda, C Yamagishi, M Kawabe, Y Okada

chapter |14 pages

#### Recent developments in selective area growth and epitaxial lateral overgrowth of Ill-nitrides

ByK Hiramatsu

chapter |6 pages

#### Growth of High-Quality GaN on Metallic-ZrB2 by Metalorganic Vapor Phase Epitaxy

ByY Yukawa, T Nakamura, M Kosaki, Y Watanabe, S Nitta, S Kamiyama, H Amano, I Akasaki, S Otani, H Kinoshita

chapter |6 pages

#### Characterization of GaNP grown by photo-assisted MOVPE

ByY Itoh, J Li, H Ishii, S Yoshida, J Kikawa, K Onabe, Y Shiraki

chapter |6 pages

#### 4f configurations of Eu and Tb ions in GaN

ByT Maruyama, H Bang, S Morishima, K Akimoto, Y Nanishi

chapter |4 pages

#### Identification of homogenous and inhomogenous structures of NH3 GS-MBE-grown GaN epilayers by ion-channeling studies

ByS Kurai, T Saimei, M Konishi, S Kubo, T Taguchi

chapter |12 pages

#### High-Qu ality GaN Growth on AIN/Sapphire Templates by MOVPE

ByM Sakai, H Ishikawa, T Egawa, T Jimbo, M Umeno, T Shibata, K Asai, S Sumiya, Y Kuraoka, M Tanaka, O Oda

chapter |6 pages

#### New buffe r layer technique using underlying epitaxial AIN films for high-quality GaN growth

ByT Shibata, Y Kida, H Miyake, K Hiramatsu, Y Hori, K Asai, T Nagai, S Sumiya, M Tanaka, O Oda

chapter |6 pages

#### Doping characteristics and structural defects in N/Ge co-implanted GaN

ByY Nakano, T Kachi, T Jimbo

chapter |6 pages

#### High-Quality and High-Mobility AlInN/GaN Superlattices Grown by Metalorganic Vapor Phase Epitaxy

ByS Yamaguchi, Y Iwamura, M Kosaki, Y Watanabe, S Mochizuki, T Nakamura, Y Yukawa, S Nitta, S Kamiyama, H Amano, I Akasaki

chapter |6 pages

#### Compositional and structural characterization of novel Ali_xSii_xN ternary alloy

ByY Taniyasu, M Kasu, N Kobayashi

chapter |13 pages

#### Temperature dependence of photoluminescence intensity change due to below-gap excitation in GaN

ByN Kamata, J M Zanardi Ocampo, W Okamoto, F Takahashi, K Yamada, K Hoshino, T Someya, Y Arakawa