This book covers one of the most important device architectures that have been widely researched to extend the transistor scaling: FinFET. Starting with theory, the book discusses the advantages and the integration challenges of this device architecture. It addresses in detail the topics such as high-density fin patterning, gate stack design, and s

part I|2 pages

Integration of Multi-Gate Devices (FinFET)

chapter 1|26 pages

Introduction to Multi-Gate Devices and Integration Challenges

ByNadine Collaert

chapter 2|28 pages

Dry Etching Patterning Requirements for Multi-Gate Devices

ByEfraı´n Altamirano-Sa´nchez, Tom Vandeweyer, and Werner Boullart

chapter 3|92 pages

High-k Dielectrics and Metal Gate Electrodes on SOI MuGFETs

ByIsabelle Ferain

chapter 4|34 pages

Doping, Contact and Strain Architectures for Highly Scaled FinFETs

ByRobert Lander

part II|2 pages

Circuit-Related Aspects

chapter 5|48 pages

Variability and Its Implications for FinFET SRAM

ByEmanuele Baravelli, Luca De Marchi, and Nicolo` Speciale

chapter 6|28 pages

Specific Features of MuGFETs at High Temperatures over aWide Frequency Range

ByValeriya Kilchytska, Jean-Pierre Raskin, Denis Flandre

chapter 7|40 pages

ESD Protection in FinFET Technology

BySteven Thijs

part III|2 pages

Exploratory Devices and Characterization Tools

chapter 8|36 pages

The Junctionless Nanowire Transistor

ByBart Sore´e, Anh-Tuan Pham, Dries Sels, and Wim Magnus

chapter 10|38 pages

New Tools for the Direct Characterisation of FinFETS

ByG. C. Tettamanzi, A. Paul, S. Lee, G. Klimeck, S. Rogge

chapter 11|27 pages

Dopant Metrology in Advanced FinFETs

ByG. Lansbergen, R. Rahman, G. C. Tettamanzi, J. Verduijn, L. C. L. Hollenberg, G. Klimeck, S. Rogge