A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

chapter 1|22 pages


chapter 2|36 pages

Strain Engineering in Microelectronics

chapter 3|60 pages

Strain-Engineered Substrates

chapter 5|56 pages

Gate Dielectrics on Engineered Substrates

chapter 6|50 pages

Heterostructure SiGe/SiGeC MOSFETs

chapter 7|90 pages

Strained-Si Heterostructure MOSFETs

chapter 8|36 pages

Modeling and Simulation of Hetero-FETs