ABSTRACT

Now in its second edition, this updated, combined volume provides a survey of GaInAsP-InP and GaInAsP-GaAs related materials for electronic and photonic device applications. It begins with an introduction to semiconductor compounds and the MOCVD growth process. It then discusses in situ and ex situ characterization techniques for MOCVD growth. Next, the book examines the specifics of the growth of GaAs and the growth and characterization of the GaAs-GaInP system. It describes optical devices based on GaAs and related compounds and details the specifics of GaAs-based laser diode structures. It also discusses electronic devices and provides an overview of optoelectronic integrated circuits (OEICs). It then reviews InP-InP and GaInAs(P)-InP MO

chapter 1|22 pages

Introduction to Semiconductor Compounds

chapter 2|22 pages

Growth Technology

chapter 3|60 pages

In situ Characterization during MOCVD

chapter 4|58 pages

Ex situ Characterization Techniques

chapter 5|30 pages

MOCVD Growth of GaAs Layers

chapter 7|34 pages

Optical Devices

chapter 8|52 pages

GaAs-Based Lasers

chapter 10|16 pages

Optoelectronic Integrated Circuits (OEICs)